scholarly journals Spectrally narrowed leaky waveguide edge emission and transient electrluminescent dynamics of OLEDs

2010 ◽  
Author(s):  
Gan Zhengqing
Keyword(s):  
Edge Emission ◽  
Leaky Waveguide

Spectrally narrowed edge emission from leaky waveguide modes in OLEDs

2007 ◽  
Author(s):  
Z. Q. Gan ◽  
Y. Tian ◽  
D. W. Lynch ◽  
Ji-hun Kang ◽  
Q-Han Park ◽  
...  
Keyword(s):  
Edge Emission ◽  
Waveguide Modes ◽  
Leaky Waveguide

scholarly journals Spectrally narrowed edge emission from leaky waveguide modes in organic light-emitting diodes

2009 ◽  
Vol 106 (9) ◽  
pp. 094502 ◽  
Author(s):  
Zhengqing Gan ◽  
Yun Tian ◽  
David W. Lynch ◽  
Ji-hun Kang ◽  
Q-Han Park ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Organic Light Emitting Diodes ◽  
Edge Emission ◽  
Light Emitting ◽  
Waveguide Modes ◽  
Organic Light ◽  
Leaky Waveguide

scholarly journals Monolayer molecular sensing using infrared leaky waveguide mode

AIP Advances ◽  
2021 ◽  
Vol 11 (3) ◽  
pp. 035305
Author(s):  
Tieyan Zhang ◽  
De He ◽  
Lu Liu ◽  
Qiqige Wulan ◽  
Jiachen Yu ◽  
...  
Keyword(s):  
Waveguide Mode ◽  
Molecular Sensing ◽  
Leaky Waveguide

Light Emission Properties of GaN-Based Double Heterostructures and Quantum Wells

1995 ◽  
Vol 395 ◽  
Author(s):  
D.A.S. Loeber ◽  
J.M. Redwing ◽  
N.G. Anderson ◽  
M.A. Tischler
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Stimulated Emission ◽  
Pump Light ◽  
Band Edge Emission ◽  
Emission Characteristics ◽  
Nitrogen Laser ◽  
Edge Emission ◽  
Edge Luminescence ◽  
Double Heterostructures

ABSTRACTEdge emission characteristics of optically pumped GaN-AlGaN double heterostructures and quantum wells are examined. The samples, which were grown by metalorganic vapor phase epitaxy, are photoexcited with light from a pulsed nitrogen laser. The pump light is focused to a narrow stripe on the sample surface, oriented perpendicular to a cleaved edge, and the edge luminescence is collected and analyzed. We first compare emission characteristics of highly excited GaN-AlGaN double heterostructures grown simultaneously on SiC and sapphire substrates. Polarization resolved spectral properties of edge luminescence from both structures is studied as a function of pump intensity and excitation stripe length. Characteristics indicative of stimulated emission are observed, particularly in the sample grown on SiC. We then present results demonstrating laser emission from a GaN-AlGaN separate-confinement quantum-well heterostructure. At high pump intensities, band edge emission from the quantum well exhibits five narrow (∼1 Å) modes which are evenly spaced by 10Å to within the resolution of the spectrometer. This represents the first demonstration of laser action in a GaN-based quantum-well structure.

Mechanism and Defect Responsible for Edge Emission in CdS

1959 ◽  
Vol 30 (8) ◽  
pp. 1135-1140 ◽  
Author(s):  
R. J. Collins
Keyword(s):  
Edge Emission

Electron mobility and edge emission in CdS crystals

1964 ◽  
Vol 15 (9) ◽  
pp. 1127-1129 ◽  
Author(s):  
G W Bradberry ◽  
W E Spear
Keyword(s):  
Electron Mobility ◽  
Edge Emission

Polarization of the Edge Emission in CdS

1960 ◽  
Vol 120 (3) ◽  
pp. 840-842 ◽  
Author(s):  
R. J. Collins ◽  
J. J. Hopfield
Keyword(s):  
Edge Emission
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