scholarly journals Analysis of Recombination Processes in 0.5 - 0.6eV Epitaxial GaInAsSb Lattice-Matched to GaSb

2004 ◽  
Author(s):  
D Donetsky ◽  
S Anikeev ◽  
G Ning ◽  
G Belenky ◽  
S Luryi ◽  
...  
Keyword(s):  
Recombination Processes ◽  
Lattice Matched

scholarly journals Radiative and nonradiative recombination processes in lattice-matched (Cd,Zn)O/(Mg,Zn)O multiquantum wells

2000 ◽  
Vol 77 (11) ◽  
pp. 1632-1634 ◽  
Author(s):  
T. Makino ◽  
C. H. Chia ◽  
Nguen T. Tuan ◽  
Y. Segawa ◽  
M. Kawasaki ◽  
...  
Keyword(s):  
Nonradiative Recombination ◽  
Recombination Processes ◽  
Lattice Matched

scholarly journals Analysis of Recombination Processes in 0.5-0.6 eV Epitaxial GaInAsSb Lattice-matched to GaSb

2004 ◽  
Author(s):  
D Donetsky ◽  
S Anikeev ◽  
N Gu ◽  
G Belenky ◽  
S Luryi ◽  
...  
Keyword(s):  
Recombination Processes ◽  
Lattice Matched

MBE growth of Si-doped InAlAsSb layers lattice-matched with InAs

1997 ◽  
Vol 175-176 ◽  
pp. 844-848 ◽  
Author(s):  
Makoto Kudo ◽  
Tomoyoshi Mishima
Keyword(s):  
Mbe Growth ◽  
Si Doped ◽  
Lattice Matched

Evaluation of crystallinity of lattice-matched Ge/GeSiSn heterostructure by Raman spectroscopy

2021 ◽  
Vol 726 ◽  
pp. 138646
Author(s):  
Takahiro Tsukamoto ◽  
Nobumitsu Hirose ◽  
Akifumi Kasamatsu ◽  
Toshiaki Matsui ◽  
Yoshiyuki Suda
Keyword(s):  
Raman Spectroscopy ◽  
Lattice Matched

scholarly journals Single-crystalline epitaxial TiO film: A metal and superconductor, similar to Ti metal

2021 ◽  
Vol 7 (2) ◽  
pp. eabd4248
Author(s):  
Fengmiao Li ◽  
Yuting Zou ◽  
Myung-Geun Han ◽  
Kateryna Foyevtsova ◽  
Hyungki Shin ◽  
...  
Keyword(s):  
Transition Metal ◽  
Density Functional ◽  
Tight Binding ◽  
Crystal Form ◽  
Titanium Monoxide ◽  
Binding Model ◽  
Functional Theory ◽  
Single Crystalline ◽  
First Time ◽  
Lattice Matched

Titanium monoxide (TiO), an important member of the rock salt 3d transition-metal monoxides, has not been studied in the stoichiometric single-crystal form. It has been challenging to prepare stoichiometric TiO due to the highly reactive Ti2+. We adapt a closely lattice-matched MgO(001) substrate and report the successful growth of single-crystalline TiO(001) film using molecular beam epitaxy. This enables a first-time study of stoichiometric TiO thin films, showing that TiO is metal but in proximity to Mott insulating state. We observe a transition to the superconducting phase below 0.5 K close to that of Ti metal. Density functional theory (DFT) and a DFT-based tight-binding model demonstrate the extreme importance of direct Ti–Ti bonding in TiO, suggesting that similar superconductivity exists in TiO and Ti metal. Our work introduces the new concept that TiO behaves more similar to its metal counterpart, distinguishing it from other 3d transition-metal monoxides.

scholarly journals Designs of InGaN Micro-LED Structure for Improving Quantum Efficiency at Low Current Density

2021 ◽  
Vol 16 (1) ◽  
Author(s):  
Shiqiang Lu ◽  
Jinchai Li ◽  
Kai Huang ◽  
Guozhen Liu ◽  
Yinghui Zhou ◽  
...  
Keyword(s):  
Quantum Efficiency ◽  
Current Density ◽  
Carrier Transport ◽  
Defect Density ◽  
Numerical Study ◽  
Structure Design ◽  
Operating Conditions ◽  
Hole Injection ◽  
Electron Blocking Layer ◽  
Recombination Processes

AbstractHere we report a comprehensive numerical study for the operating behavior and physical mechanism of nitride micro-light-emitting-diode (micro-LED) at low current density. Analysis for the polarization effect shows that micro-LED suffers a severer quantum-confined Stark effect at low current density, which poses challenges for improving efficiency and realizing stable full-color emission. Carrier transport and matching are analyzed to determine the best operating conditions and optimize the structure design of micro-LED at low current density. It is shown that less quantum well number in the active region enhances carrier matching and radiative recombination rate, leading to higher quantum efficiency and output power. Effectiveness of the electron blocking layer (EBL) for micro-LED is discussed. By removing the EBL, the electron confinement and hole injection are found to be improved simultaneously, hence the emission of micro-LED is enhanced significantly at low current density. The recombination processes regarding Auger and Shockley–Read–Hall are investigated, and the sensitivity to defect is highlighted for micro-LED at low current density.Synopsis: The polarization-induced QCSE, the carrier transport and matching, and recombination processes of InGaN micro-LEDs operating at low current density are numerically investigated. Based on the understanding of these device behaviors and mechanisms, specifically designed epitaxial structures including two QWs, highly doped or without EBL and p-GaN with high hole concentration for the efficient micro-LED emissive display are proposed. The sensitivity to defect density is also highlighted for micro-LED.

Growth of a lattice-matched GaAsPN p–i–n junction on a Si substrate for monolithic III–V/Si tandem solar cells

2017 ◽  
Vol 10 (7) ◽  
pp. 075504 ◽  
Author(s):  
Keisuke Yamane ◽  
Masaya Goto ◽  
Kenjiro Takahashi ◽  
Kento Sato ◽  
Hiroto Sekiguchi ◽  
...  
Keyword(s):  
Solar Cells ◽  
Si Substrate ◽  
Tandem Solar Cells ◽  
Lattice Matched
Sign in / Sign up

Export Citation Format

Share Document