scholarly journals High Growth Rate Deposition of Hydrogenated Amorphous Silicon-Germanium Films and Devices Using ECR-PECVD

2002 ◽  
Author(s):  
Yong Liu
Keyword(s):  
Growth Rate ◽  
Amorphous Silicon ◽  
Silicon Germanium ◽  
Hydrogenated Amorphous Silicon ◽  
High Growth ◽  
High Growth Rate ◽  
Germanium Films ◽  
Amorphous Silicon Germanium ◽  
Hydrogenated Amorphous

Short-range compositional randomness of hydrogenated amorphous silicon–germanium films

2002 ◽  
Vol 92 (2) ◽  
pp. 801-807 ◽  
Author(s):  
B. D. Chapman ◽  
S.-W. Han ◽  
G. T. Seidler ◽  
E. A. Stern ◽  
J. David Cohen ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Silicon Germanium ◽  
Short Range ◽  
Hydrogenated Amorphous Silicon ◽  
Germanium Films ◽  
Amorphous Silicon Germanium ◽  
Hydrogenated Amorphous

Deposition of photosensitive hydrogenated amorphous silicon–germanium films with a tantalum hot wire

2006 ◽  
Vol 501 (1-2) ◽  
pp. 198-201 ◽  
Author(s):  
Yueqin Xu ◽  
A.H. Mahan ◽  
Lynn M. Gedvilas ◽  
Robert C. Reedy ◽  
Howard M. Branz
Keyword(s):  
Amorphous Silicon ◽  
Silicon Germanium ◽  
Hydrogenated Amorphous Silicon ◽  
Hot Wire ◽  
Germanium Films ◽  
Amorphous Silicon Germanium ◽  
Hydrogenated Amorphous

Properties of Catalytic-Cvd Amorphous Silicon-Germanium (a-SiGe:H)

1990 ◽  
Vol 192 ◽  
Author(s):  
Hideki Matsumura ◽  
Masaaki Yamaguchi ◽  
Kazuo Morigaki
Keyword(s):  
Amorphous Silicon ◽  
Silicon Germanium ◽  
Hydrogenated Amorphous Silicon ◽  
Chemical Vapor ◽  
Characteristic Energy ◽  
Optical Band Gaps ◽  
Spin Resonance ◽  
Amorphous Silicon Germanium ◽  
Conductive Properties ◽  
Hydrogenated Amorphous

ABSTRACTHydrogenated amorphous silicon-germanium (a-SiGe:H) films are prepared by the catalytic chemical vapor deposition (Cat-CVD) method using a SiH4, GeH4 and H4 gas mixture. Properties of the films are investigated by the photo-thermal deflection spectroscopy (PDS) and electron spin resonance (ESR) measurements, in addition to the photo-conductive and structural studies. It is found that the characteristic energy of Urbach tail, ESR spin density and other photo-conductive properties of Cat-CVD a-SiGe:H films with optical band gaps around 1.45 eV are almost equivalent to those of the device quality glow discharge hydrogenated amorphous silicon (a-Si:H).

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