scholarly journals Vapor--liquid--solid phase equilibria of radioactive sodium salt wastes at Hanford

1976 ◽  
Author(s):  
G.S. Barney
Keyword(s):  
Phase Equilibria ◽  
Sodium Salt ◽  
Solid Phase ◽  
Vapor Liquid Solid ◽  
Radioactive Sodium ◽  
Vapor Liquid

Growth of α-Al2O3 whiskers by a vapor-liquid-solid phase mechanism

1972 ◽  
Vol 11 (4) ◽  
pp. 264-267
Author(s):  
V. N. Gribkov ◽  
É. L. Umantsev ◽  
A. S. Isaikin ◽  
B. V. Shchetanov
Keyword(s):  
Solid Phase ◽  
Vapor Liquid Solid ◽  
Α Al2o3 ◽  
Vapor Liquid

Vapor−Liquid and Vapor−Solid Phase Equilibria of Fullerenes:  The Role of the Potential Shape on the Triple Point

2003 ◽  
Vol 107 (44) ◽  
pp. 12320-12323 ◽  
Author(s):  
Bin Chen ◽  
J. Ilja Siepmann ◽  
Sami Karaborni ◽  
Michael L. Klein
Keyword(s):  
Phase Equilibria ◽  
Triple Point ◽  
Solid Phase ◽  
Potential Shape ◽  
Vapor Liquid

On the Distance Directional Growth of GaxOy Nanomaterials Concerning the Surface Au Droplets and Au/Ga/O Clusters Outward Diffusion on the Separated Au Islands/Strips on Gaas Substrate Using Thermal Vapor-Liquid-Solid Method

2020 ◽  
Vol 63 ◽  
pp. 31-46
Author(s):  
Khac An Dao ◽  
Tien Thanh Nguyen ◽  
Hong Trang Pham
Keyword(s):  
Gaas Substrate ◽  
Solid Phase ◽  
Kirkendall Effect ◽  
X Ray Diffraction ◽  
Au Catalyst ◽  
Vapor Liquid Solid ◽  
Directional Growth ◽  
Outward Diffusion ◽  
Growth Method ◽  
Vapor Liquid

This paper outlines some experimental results and discusses the new growth method for growing the different GaxOy nanomaterials formed during the outward diffusion of the surface nanoclusters (SNCs) including the Au droplets and/or surface Au/Ga/O nanoclusters from the Au separated islands/strips being on GaAs substrate during the thermal Vapor -Liquid -Solid method with two steps temperature mode. Depending on the technological conditions, during the outward diffusion of the SNCs from the Au catalyst island/strip, the different sizes, morphologies and features of nanomaterials will be formed along the surface diffusion direction with the decreasing sizes. This growth method to be so called the distance directional growth method, it has not reported in the Literature. The nanomaterial growth process here could be explained by the solid - solid phase with the self-growth mechanism from the moving-diffusing SNCs with the features formed already before based on their chemical- physical interactions between the Au catalyst island/strip and GaAs substrate. In the suitable technological conditions the surface nanoscale Kirkendall effect with Kirkendall voids also completely formed... Based on the results of Field Emission Scanning electron Microscope (FESEM), the Energy-Dispersive X-ray diffraction (EDX) measurements, the formation mechanism and effect of the SNCs outward diffusion on the growth of different GaxOy nanomaterials have discussed more in detailed.. The diffusivities of the SNCs depending on technological conditions in the different samples have estimated by the random walk theory, their values are in the range of 8.35x10-10 to 10-11 m2/sec. The distance directional growth method could be applied for the growing and controlling the nanomaterials configurations outside the Au catalyst island/strip on GaAs substrate with the different sizes for nano devices application.

VLS Growth of Si nanowhiskers on a H-terminated Si{111} surface

1998 ◽  
Vol 536 ◽  
Author(s):  
N. Ozaki ◽  
Y. Ohno ◽  
S. Takeda ◽  
M. Hirata
Keyword(s):  
High Pressure ◽  
Growth Condition ◽  
Growth Mechanism ◽  
Quantum Confinement ◽  
Critical Value ◽  
Extended Defects ◽  
Vapor Liquid Solid ◽  
Minimum Diameter ◽  
Vls Growth ◽  
Vapor Liquid

AbstractWe have grown Si nanowhiskers on a Si{1111} surface via the vapor-liquid-solid (VLS) mechanism. The minimum diameter of the crystalline is 3nm and is close to the critical value for the effect of quantum confinement. We have found that many whiskers grow epitaxially or non-epitaxially on the substrate along the 〈112〉 direction as well as the 〈111〉 direction.In our growth procedure, we first deposited gold on a H-terminated Si{111} surface and prepared the molten catalysts of Au and Si at 500°C. Under the flow of high pressure silane gas, we have succeeded in producing the nanowhiskers without any extended defects. We present the details of the growth condition and discuss the growth mechanism of the nanowhiskers extending along the 〈112〉 direction.

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