Vacuum ultraviolet electronic properties of liquids

A detailed understanding of VUV-driven photochemistry in complex organic molecules is challenging. This quantum chemical analysis reports the electronic properties and ionization energies up to the VUV range (6–11 eV) of the chlorinated cumulenones.

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Vacuum ultraviolet electronic properties of liquids. Final performance report, 1 February 1988--31 July 1989

10.2172/10176552 ◽

1989 ◽

Author(s):

L.R. Painter

Keyword(s):

Electronic Properties ◽

Vacuum Ultraviolet ◽

Final Performance ◽

Performance Report

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Oscillator Strength Measurements in the Vacuum-Ultraviolet by the Emission Method

International Astronomical Union Colloquium ◽

10.1017/s0252921100108073 ◽

1988 ◽

Vol 102 ◽

pp. 353-356

Author(s):

C. Goldbach ◽

G. Nollez

Keyword(s):

Oscillator Strength ◽

Vacuum Ultraviolet ◽

Oscillator Strengths ◽

Emission Method ◽

Absolute Scale ◽

Good Agreement

AbstractThe principles and the realization of an experiment devoted to oscillator strength measurements in the vacuum-ultraviolet by the emission method are briefly presented. The results obtained for the strong multiplets of neutral nitrogen and carbon in the 1200-2000 Å range yield an absolute scale of oscillator strengths in good agreement with the most recent calculations.

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Structural properties of GaAs/InGaAs/GaAs (001) and InGaAs/GaAs (001) heterostructures and correlation with electronic properties

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100176149 ◽

1990 ◽

Vol 48 (4) ◽

pp. 602-603

Author(s):

J.M. Bonar ◽

R. Hull ◽

R. Malik ◽

R. Ryan ◽

J.F. Walker

Keyword(s):

Band Gap ◽

Electronic Properties ◽

Gaas Substrate ◽

Critical Thickness ◽

Lattice Mismatch ◽

Band Offset ◽

Misfit Dislocations ◽

Gaas Substrates ◽

Gaas Structure ◽

Low X

In this study we have examined a series of strained heteropeitaxial GaAs/InGaAs/GaAs and InGaAs/GaAs structures, both on (001) GaAs substrates. These heterostructures are potentially very interesting from a device standpoint because of improved band gap properties (InAs has a much smaller band gap than GaAs so there is a large band offset at the InGaAs/GaAs interface), and because of the much higher mobility of InAs. However, there is a 7.2% lattice mismatch between InAs and GaAs, so an InxGa1-xAs layer in a GaAs structure with even relatively low x will have a large amount of strain, and misfit dislocations are expected to form above some critical thickness. We attempt here to correlate the effect of misfit dislocations on the electronic properties of this material.The samples we examined consisted of 200Å InxGa1-xAs layered in a hetero-junction bipolar transistor (HBT) structure (InxGa1-xAs on top of a (001) GaAs buffer, followed by more GaAs, then a layer of AlGaAs and a GaAs cap), and a series consisting of a 200Å layer of InxGa1-xAs on a (001) GaAs substrate.

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