scholarly journals Finite-volume model for chemical vapor infiltration incorporating radiant heat transfer. Interim report

10.2172/70762 ◽  
1995 ◽  
Author(s):  
A.W. Smith ◽  
T.L. Starr
1994 ◽  
Vol 342 ◽  
Author(s):  
F.Y. Sorrell ◽  
M.J. Fordham ◽  
Seungil Yu ◽  
A.J. Silva Neto

ABSTRACTA methodology for predicting the spatial and temporal distribution of film thickness is given for Chemical Vapor Deposition (CVD), and for thermal oxidation in Rapid Thermal Processor (RTP) systems, e.g. RTPCVD and RTO. The methodology is based on a wafer thermal model for the heat transfer to, from and within the wafer, a geometric ray trace algorithm to predict the radiant heat transfer from the lamps and reflectors to the wafer, a process model for the deposition or oxidation, and a gas flow model to predict the flow field in the RTP chamber. The CVD process is based on the Arrhenius deposition model, and thermal oxidation is based on a parallel diffusion model. The methodology has been validated by comparison of measured and predicted final film thickness from a cylindrical RTP system. The methodology is based on physical principles, with a minimum reliance on empirical relations and experimental data. As such it can be used for optimization of existing RTP designs and for the evaluation of proposed RTP configurations, such as new or novel lamp, reflector or chamber geometry.


1990 ◽  
Vol 112 (2) ◽  
pp. 415-423 ◽  
Author(s):  
G. D. Raithby ◽  
E. H. Chui

A new “finite-volume” method is proposed to predict radiant heat transfer in enclosures with participating media. The method can conceptually be applied with the same nonorthogonal computational grids used to compute fluid flow and convective heat transfer. A fairly general version of the method is derived, and details are illustrated by applying it to several simple benchmark problems. Test results indicate that good accuracy is obtained on coarse computational grids, and that solution errors diminish rapidly as the grid is refined.


2016 ◽  
Vol 31 (3) ◽  
pp. 298
Author(s):  
TANG Zhe-Peng ◽  
ZHANG Zhong-Wei ◽  
FANG Jin-Ming ◽  
PENG Yu-Qing ◽  
LI Ai-Jun ◽  
...  

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