scholarly journals An in-situ spectroscopic erosion yield measurement with applications to sputtering and surface morphology alterations

1988 ◽  
Author(s):  
W.K. Leung ◽  
Y. Hirooka ◽  
R.W. Conn ◽  
D.M. Goebel ◽  
B. LaBombard ◽  
...  
Keyword(s):  
Surface Morphology ◽  
Yield Measurement

scholarly journals An in situ spectroscopic erosion yield measurement with applications to sputtering and surface morphology alterations

1989 ◽  
Vol 7 (1) ◽  
pp. 21-26 ◽  
Author(s):  
W. K. Leung ◽  
Y. Hirooka ◽  
R. W. Conn ◽  
D. M. Goebel ◽  
B. Labombard ◽  
...  
Keyword(s):  
Surface Morphology ◽  
Yield Measurement

Growth of Epitaxial IrSi3 Layers on Si(111)

1989 ◽  
Vol 160 ◽  
Author(s):  
T. L. Lin ◽  
C. W. Nieh
Keyword(s):  
Surface Morphology ◽  
Molecular Beam ◽  
Solid Phase ◽  
Single Mode ◽  
Growth Conditions ◽  
Tem Analysis ◽  
Mbe Growth ◽  
Good Surface ◽  
Transmission Electron

AbstractEpitaxial IrSi3 films have been grown on Si (111) by molecular beam epitaxy (MBE) at temperatures ranging from 630 to 800 °C and by solid phase epitaxy (SPE) at 500 °C. Good surface morphology was observed for IrSi3 layers grown by MBE at temperatures below 680 °C, and an increasing tendency to form islands is noted in samples grown at higher temperatures. Transmission electron microscopy (TEM) analysis reveals that the IrSi3 layers grow epitaxially on Si(111) with three epitaxial modes depending on the growth conditions. For IrSi3 layers grown by MBE at 630 °C, two epitaxial modes were observed with ~ 50% area coverage for each mode. Single mode epitaxial growth was achieved at a higher MBE growth temperature, but with island formation in the IrSi3 layer. A template technique was used with MBE to improve the IrSi3 surface morphology at higher growth temperatures. Furthermore, single-crystal IrSi3 was grown on Si(111) at 500 °C by SPE, with annealing performed in-situ in a TEM chamber.

Surface morphology of As-deposited and laser-damaged dielectric mirror coatings studied in-situ by atomic force microscopy

1992 ◽  
Author(s):  
Mark R. Kozlowski ◽  
Michael C. Staggs ◽  
Mehdi Balooch ◽  
Robert J. Tench ◽  
Wigbert J. Siekhaus
Keyword(s):  
Atomic Force Microscopy ◽  
Surface Morphology ◽  
Force Microscopy ◽  
Dielectric Mirror ◽  
Atomic Force

Chromic Polydiacetylene Single Crystals: Atomic Force Microscopy Studies

1995 ◽  
Vol 413 ◽  
Author(s):  
V. Shivshankar ◽  
C. Sung ◽  
J. Kumar ◽  
S. K. Tripathy ◽  
D. J. Sandman
Keyword(s):  
Atomic Force Microscopy ◽  
Surface Morphology ◽  
Single Crystals ◽  
Ambient Conditions ◽  
Free Standing ◽  
Force Microscopy ◽  
Sensor Performance ◽  
Atomic Force ◽  
Variable Surface

ABSTRACTWe have studied the surface morphology of free standing single crystals of thermochromic polydiacetylenes (PDAs), namely, ETCD and IPUDO (respectively, the ethyl and isopropyl urethanes of 5,7-dodecadiyn-1,12-diol), by Atomic Force Microscopy (AFM) under ambient conditions. Micron scale as well as molecularly resolved images were obtained. The micron scale images indicate a variable surface, and the molecularly resolved images show a well defined 2-D lattice that is interpreted in terms of molecular models and known crystallographic data. Thereby information about surface morphology, which is crucial to potential optical device or chromic sensor performance is available. We also report the observation of a “macroscopic shattering” of the IPUDO monomer crystal during in-situ UV polymerization studies.

4H-SiC Homoepitaxial Growth on Vicinal-Off Angled Si-Face Substrate

2010 ◽  
Vol 645-648 ◽  
pp. 99-102 ◽  
Author(s):  
Kazutoshi Kojima ◽  
Sachiko Ito ◽  
Junji Senzaki ◽  
Hajime Okumura
Keyword(s):  
Surface Morphology ◽  
Epitaxial Growth ◽  
Growth Temperature ◽  
Growth Conditions ◽  
Step Bunching ◽  
Homoepitaxial Growth ◽  
Blocking Voltage ◽  
Basal Plane Dislocation ◽  
Epilayer Surface

We have carried out detailed investigations of 4H-SiC homoepitaxial growth on vicinal off-angled Si-face substrates. We found that the surface morphology of the substrate just after in-situ H2 etching was also affected by the value of the vicinal-off angle. Growth conditions consisting of a low C/Si ratio and a low growth temperature were effective in suppressing macro step bunching at the grown epilayer surface. We also demonstrated epitaxial growth without step bunching on a 2-inch 4H-SiC Si-face substrate with a vicinal off angle of 0.79o. Ni Schottky barrier diodes fabricated on an as-grown epilayer had a blocking voltage above 1000V and a leakage current of less than 5x10-7A/cm2. We also investigated the propagation of basal plane dislocation from the vicinal off angled substrate into the epitaxial layer.

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