scholarly journals Thin films of silicon on low-cost substrates. Quarterly project report No. 1, July 1, 1976-September 30, 1976

1976 ◽  
Author(s):  
A. Baghdadi ◽  
R.W. Gurtler ◽  
M.C. Keeling
Keyword(s):  
Thin Films ◽  
Low Cost ◽  
Project Report

scholarly journals Thin films of gallium arsenide on low-cost substrates. Quarterly project report No. 1, July 5--October 2, 1976

1976 ◽  
Author(s):  
R.P. Ruth ◽  
P.D. Dapkus ◽  
R.D. Dupuis ◽  
R.E. Johnson ◽  
H.M. Manasevit ◽  
...  
Keyword(s):  
Thin Films ◽  
Gallium Arsenide ◽  
Low Cost ◽  
Project Report

scholarly journals Thin films of gallium arsenide on low-cost substrates. Quarterly project report No. 3, January 2, 1977--April 2, 1977

1977 ◽  
Author(s):  
R.P. Dapkus, P.D. Ruth ◽  
R.D. Dupuis ◽  
A.G. Campbell ◽  
R.E. Johnson ◽  
H.M. Manasevit ◽  
...  
Keyword(s):  
Thin Films ◽  
Gallium Arsenide ◽  
Low Cost ◽  
Project Report

scholarly journals Thin films of gallium arsenide on low-cost substrates. Quarterly project report No. 2, October 3, 1976--January 1, 1977

1977 ◽  
Author(s):  
R.P. Ruth ◽  
P.D. Dapkus ◽  
R.D. Dupuis ◽  
A.G. Campbell ◽  
R.E. Johnson ◽  
...  
Keyword(s):  
Thin Films ◽  
Gallium Arsenide ◽  
Low Cost ◽  
Project Report

scholarly journals Direct measurement of the thermoelectric properties of electrochemically deposited Bi2Te3 thin films

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
Jose Recatala-Gomez ◽  
Pawan Kumar ◽  
Ady Suwardi ◽  
Anas Abutaha ◽  
Iris Nandhakumar ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermoelectric Properties ◽  
Bismuth Telluride ◽  
Indium Tin Oxide ◽  
Seed Layer ◽  
Room Temperature ◽  
Low Cost ◽  
Temperature Dependent ◽  
Temperature Heat ◽  
Electrochemically Deposited

Abstract The best known thermoelectric material for near room temperature heat-to-electricity conversion is bismuth telluride. Amongst the possible fabrication techniques, electrodeposition has attracted attention due to its simplicity and low cost. However, the measurement of the thermoelectric properties of electrodeposited films is challenging because of the conducting seed layer underneath the film. Here, we develop a method to directly measure the thermoelectric properties of electrodeposited bismuth telluride thin films, grown on indium tin oxide. Using this technique, the temperature dependent thermoelectric properties (Seebeck coefficient and electrical conductivity) of electrodeposited thin films have been measured down to 100 K. A parallel resistor model is employed to discern the signal of the film from the signal of the seed layer and the data are carefully analysed and contextualized with literature. Our analysis demonstrates that the thermoelectric properties of electrodeposited films can be accurately evaluated without inflicting any damage to the films.

Preparation of CuSbS2 thin films by a facile and low-cost chemical solution method

2017 ◽  
Vol 29 (5) ◽  
pp. 4075-4079
Author(s):  
Wei Wang ◽  
Lingyun Hao ◽  
Wei Zhang ◽  
Qing Lin ◽  
Xiaojuan Zhang ◽  
...  
Keyword(s):  
Thin Films ◽  
Solution Method ◽  
Low Cost ◽  
Chemical Solution ◽  
Chemical Solution Method

Thermal conversion of CBD grown ZnS thin films to ZnO

2020 ◽  
Vol 0 (0) ◽  
Author(s):  
Kooliyankal Naseema ◽  
Kaniyamkandy Ribin ◽  
Nidiyanga Navya ◽  
Prasoon Prasannan
Keyword(s):  
Thin Films ◽  
Low Cost ◽  
Thermal Conversion ◽  
X Ray Diffraction ◽  
Xrd Pattern ◽  
Glass Substrates ◽  
Anion Substitution ◽  
Nano Crystalline ◽  
Before And After ◽  
Uv Visible

AbstractNano crystalline zinc sulfide thin films were deposited onto glass substrates by chemical bath deposition method. One of the samples was annealed at 300 °C for 2 h in air using a muffle furnace. The prepared thin films were investigated by X-ray diffraction (XRD), UV–visible spectroscopy (UV–vis), photoluminescence spectroscopy (PL), scanning electron microscopy (SEM) and Raman spectroscopy (FT-R) studies before and after annealing. The analysis confirmed the thermal-induced anion substitution and conversion of ZnS crystal to ZnO wurtzite crystal. XRD pattern showed that these films were phase pure and polycrystalline in nature. Optical band gap was found to be 3.86 eV for ZnS and 3.21 eV for ZnO. The films prepared by this simple, low-cost technique are suitable for photovoltaic and optoelectronic applications.

scholarly journals Preparation of InSe Thin Films by Thermal Evaporation Method and Their Characterization: Structural, Optical, and Thermoelectrical Properties

2018 ◽  
Vol 2018 ◽  
pp. 1-9 ◽  
Author(s):  
Sarita Boolchandani ◽  
Subodh Srivastava ◽  
Y. K. Vijay
Keyword(s):  
Thin Films ◽  
Seebeck Coefficient ◽  
Thermoelectric Power ◽  
Temperature Variation ◽  
Thermal Evaporation ◽  
Low Cost ◽  
High Vacuum ◽  
Power Measurement ◽  
Thermal Evaporation Method ◽  
Evaporation Method

The indium selenium (InSe) bilayer thin films of various thickness ratios, InxSe(1-x) (x = 0.25, 0.50, 0.75), were deposited on a glass substrate keeping overall the same thickness of 2500 Ǻ using thermal evaporation method under high vacuum atmosphere. Electrical, optical, and structural properties of these bilayer thin films have been compared before and after thermal annealing at different temperatures. The structural and morphological characterization was done using XRD and SEM, respectively. The optical bandgap of these thin films has been calculated by Tauc’s relation that varies within the range of 1.99 to 2.05 eV. A simple low-cost thermoelectrical power measurement setup is designed which can measure the Seebeck coefficient “S” in the vacuum with temperature variation. The setup temperature variation is up to 70°C. This setup contains a Peltier device TEC1-12715 which is kept between two copper plates that act as a reference metal. Also, in the present work, the thermoelectric power of indium selenide (InSe) and aluminum selenide (AlSe) bilayer thin films prepared and annealed in the same way is calculated. The thermoelectric power has been measured by estimating the Seebeck coefficient for InSe and AlSe bilayer thin films. It was observed that the Seebeck coefficient is negative for InSe and AlSe thin films.

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