Bias voltage assisted hot filament chemical vapor deposition (HFCVD) was adopted to deposit boron-doped diamond (BDD) film on porous titanium substrate, and diamond composite membrane materials were prepared and characterized by X-ray diffraction method. The influence of carbon concentration, boron source concentration, substrate temperature were discussed respectively on the diamond quality and the transition layer TiC. Results showed that: The concentration of carbon source was related to crystal orientation and the growth rate of diamond. The increase of diamond nucleation density and growth rate prevented the formation of TiC, and improved adhesion between diamond and the substrate; The increasing of boron source concentration promoted the orientation growth of diamond film (111) lattice plane, while reduced the content of TiC; Temperature affected the formation of TiC, and TiC diffraction peaks intensity decreased with the increase of substrate temperature; As the substrate temperature increased, secondary nucleation rate caused cauliflower-like structure which dominated growth mechanism transitting from MCD (Microcrystalline diamond) to the NCD (Nanocrystalline diamond).
Thin-source concentration dependent diffusion