Ribbon silicon material is specially designed for solar cell wafers. In this paper, a novel ribbon silicon material “dipping method” has been designed in order to lower the cost of solar cell. The principle and procedure of dipping method were described. In addition, the diffusion of impurities in the silicon wafer and its influence on the efficiency of solar cells were investigated. The photovoltaic performance of polycrystalline silicon solar cells which were based on the metallurgical grade silicon substrate with the thickness of 600μm, was simulated by AMPS1-D software. And some import parameters were obtained including I-V characteristic, 17.004% conversion efficiency. This artic is provided theoretical support to the industrial production of solar cells by dipping method, and it will open a new road to production low cost solar cell.
Process research on polycrystalline-silicon material (PROPSM). Quarterly report No. 10, April 1, 1983 - June 30, 1983