scholarly journals Macroscopic quantum tunneling in Josephson tunnel junctions and Coulomb blockade in single small tunnel junctions

1991 ◽  
Author(s):  
A.N. Cleland
Keyword(s):  
Coulomb Blockade ◽  
Quantum Tunneling ◽  
Tunnel Junctions ◽  
Macroscopic Quantum ◽  
Josephson Tunnel ◽  
Macroscopic Quantum Tunneling ◽  
Josephson Tunnel Junctions

EFFECTS OF MACROSCOPIC QUANTUM TUNNELING OF CHARGE IN ULTRASMALL SET DOUBLE-JUNCTIONS WITH EXTERNAL ELECTROMAGNETIC ENVIRONMENT

1993 ◽  
Vol 07 (11) ◽  
pp. 2201-2217 ◽  
Author(s):  
W. KRECH ◽  
A. HÄDICKE
Keyword(s):  
Line Width ◽  
Coulomb Blockade ◽  
Quantum Tunneling ◽  
Higher Order ◽  
Electromagnetic Environment ◽  
Macroscopic Quantum ◽  
High Impedance ◽  
Logarithmic Singularities ◽  
The Mean ◽  
Macroscopic Quantum Tunneling

It is known that classical Coulomb blockade effects of SET devices are disturbed by the tunneling effects of higher order denoted as macroscopic quantum tunneling of charge (q-mqt) or co-tunneling. The influence of an external electromagnetic environment modelled by an additional impedance in the circuit on the mean q-mqt current is studied in the high-impedance limit. This is important especially for devices containing only two SET junctions, for instance the SET electrometer, where the influence of the environment on the Coulomb blockade is remarkable. It can be shown that the Coulomb blockade is only partly destroyed producing a new, lower “quantum” Coulomb blockade. This holds as well in the case of the incoherent as of the coherent q-mqt. Furthermore, a method is presented on how to regularize the logarithmic singularities in the q-mqt current using line width effects.

scholarly journals Simulation of a Single Electron Tunnel Transistor with Inclusion of Inelastic Macroscopic Quantum Tunneling of Charge

VLSI Design ◽  
1998 ◽  
Vol 6 (1-4) ◽  
pp. 35-38 ◽  
Author(s):  
Christoph Wasshuber ◽  
Hans Kosina
Keyword(s):  
Quantum Tunneling ◽  
Resonant Tunneling ◽  
Tunnel Junctions ◽  
Single Electron ◽  
Tunnel Effect ◽  
Full Inclusion ◽  
Macroscopic Quantum ◽  
Wide Range ◽  
Macroscopic Quantum Tunneling ◽  
Increasing Temperature

We simulated a Single Electron Tunnel (SET) Transistor with the full inclusion of inelastic macroscopic quantum tunneling of charge (q-MQT) or co-tunneling. Numerical results of the q-MQT effect over a wide range of bias and gate voltage were achieved.Monte Carlo method was used to simulate electrons that tunnel back and forth through the two tunnel junctions of the SET transistor and co-tunnel back and forth through both junctions simultaneously.Resonances in the I-V characteristic were found. The resonant peaks decrease with increasing temperature. The origin of this resonance is the q-MQT or co-tunnel effect in contrast with the normal resonant tunneling in double barriers.

Macroscopic quantum tunneling of charge density waves

1999 ◽  
Vol 09 (PR10) ◽  
pp. Pr10-161-Pr10-163
Author(s):  
H. Matsukawa ◽  
H. Miyake ◽  
M. Yumoto ◽  
H. Fukuyama
Keyword(s):  
Charge Density ◽  
Quantum Tunneling ◽  
Charge Density Waves ◽  
Density Waves ◽  
Macroscopic Quantum ◽  
Macroscopic Quantum Tunneling

Theory of macroscopic quantum tunneling in Nb/Au/YBCO Josephson junctions

2007 ◽  
Vol 463-465 ◽  
pp. 80-83 ◽  
Author(s):  
S. Kawabata ◽  
A.A. Golubov ◽  
Ariando ◽  
C.J.M. Verwijs ◽  
H. Hilgenkamp
Keyword(s):  
Quantum Tunneling ◽  
Josephson Junctions ◽  
Macroscopic Quantum ◽  
Macroscopic Quantum Tunneling
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