scholarly journals Development and evaluation of die materials for use in the growth of silicon ribbons by the inverted ribbon growth process. Task II. LSA Project. Final report, October 1, 1977-March 31, 1979

1979 ◽  
Author(s):  
M T Duffy ◽  
S Berkman ◽  
G W Cullen ◽  
R V Aiello ◽  
H I Moss
Keyword(s):  
Growth Process ◽  
Final Report ◽  
Die Materials ◽  
Ribbon Growth

Analysis of the meniscus in the horizontal ribbon growth process

2013 ◽  
Author(s):  
German A. Oliveros ◽  
James Church ◽  
Seetharaman Sridhar ◽  
B. Erik Ydstie
Keyword(s):  
Growth Process ◽  
Ribbon Growth

scholarly journals Experimental and numerical investigation of the horizontal ribbon growth process

2016 ◽  
Vol 453 ◽  
pp. 163-172 ◽  
Author(s):  
Brian T. Helenbrook ◽  
Peter Kellerman ◽  
Frederick Carlson ◽  
Nandish Desai ◽  
Dawei Sun
Keyword(s):  
Numerical Investigation ◽  
Growth Process ◽  
Ribbon Growth

Fundamental Research into Thin Films in a Developing Country

1972 ◽  
Vol 30 ◽  
pp. 500-501
Author(s):  
J.A. Eades ◽  
E. Grünbaum
Keyword(s):  
Thin Films ◽  
Growth Process ◽  
Empirical Process ◽  
Nucleation And Growth ◽  
Research Groups ◽  
Film Research ◽  
Fundamental Research ◽  
Controlled Deposition ◽  
The One ◽  
The University

In the last decade and a half, thin film research, particularly research into problems associated with epitaxy, has developed from a simple empirical process of determining the conditions for epitaxy into a complex analytical and experimental study of the nucleation and growth process on the one hand and a technology of very great importance on the other. During this period the thin films group of the University of Chile has studied the epitaxy of metals on metal and insulating substrates. The development of the group, one of the first research groups in physics to be established in the country, has parallelled the increasing complexity of the field.The elaborate techniques and equipment now needed for research into thin films may be illustrated by considering the plant and facilities of this group as characteristic of a good system for the controlled deposition and study of thin films.

UHV-STM studies of silicon nano-pyramid growth on silicon surface at high temperature

1992 ◽  
Vol 50 (2) ◽  
pp. 1144-1145
Author(s):  
T. Sato ◽  
S. Kitamura ◽  
T. Sueyoshl ◽  
M. Iwatukl ◽  
C. Nielsen
Keyword(s):  
High Temperature ◽  
Relaxation Process ◽  
Thermal Effect ◽  
Bias Voltage ◽  
Silicon Surface ◽  
Growth Process ◽  
Tunneling Current ◽  
Fabrication Technique ◽  
Nano Fabrication ◽  
Electromigration Effect

Recently, the growth process and relaxation process of crystalline structures were studied by observing a SI nano-pyramid which was built on a Si surface with a UHV-STM. A UHV-STM (JEOL JSTM-4000×V) was used for studying a heated specimen, and the specimen was kept at high temperature during observation. In this study, the nano-fabrication technique utilizing the electromigration effect between the STM tip and the specimen was applied. We observed Si atoms migrated towords the tip on a high temperature Si surface.Clean surfaces of Si(lll)7×7 and Si(001)2×l were prepared In the UHV-STM at a temperature of approximately 600 °C. A Si nano-pyramid was built on the Si surface at a tunneling current of l0nA and a specimen bias voltage of approximately 0V in both polarities. During the formation of the pyramid, Images could not be observed because the tip was stopped on the sample. After the formation was completed, the pyramid Image was observed with the same tip. After Imaging was started again, the relaxation process of the pyramid started due to thermal effect.

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