scholarly journals ELASTIC MODULI AND THERMAL EXPANSION OF POROUS MOLYBDENUM--URANIUM DIOXIDE CERMETS.

1971 ◽  
Author(s):  
J.C. Rowley ◽  
C.R. Saunders ◽  
C. McInteer ◽  
C.P. Kempter ◽  
R.E. Riley
Keyword(s):  
Thermal Expansion ◽  
Uranium Dioxide ◽  
Elastic Moduli

Plutonium Elastic Moduli, Electron Localization, and Temperature

2008 ◽  
Vol 1104 ◽  
Author(s):  
Albert Migliori ◽  
Izabella Mihut-Stroe ◽  
Jon B. Betts
Keyword(s):  
Thermal Expansion ◽  
Elastic Moduli ◽  
Negative Thermal Expansion ◽  
Orthorhombic Phase ◽  
Elastic Stiffness ◽  
Cubic Phase ◽  
Electron Localization ◽  
Face Centered Cubic ◽  
Order Of Magnitude ◽  
Almost All

AbstractIn almost all materials, compression is accompanied naturally by stiffening. Even in materials with zero or negative thermal expansion, where warming is accompanied by volume contraction it is the volume change that primarily controls elastic stiffness. Not so in the metal plutonium. In plutonium, alloying with gallium can change the sign of thermal expansion, but for the positive-thermal-expansion monoclinic phase as well as the face-centered-cubic phase with either sign of thermal expansion, and the orthorhombic phase, recent measurements of elastic moduli show soften on warming by an order of magnitude more than expected, the shear and compressional moduli track, and volume seems irrelevant. These effects point toward a novel mechanism for electron localization, and have important implication for the pressure dependence of the bulk compressibility.

Stress in SiC Single Crystal Caused by the Difference of CTE of SiC Seed and Graphite Holder and Role of the Elastic Moduli

2016 ◽  
Vol 858 ◽  
pp. 93-96 ◽  
Author(s):  
Alexey Fadeev ◽  
Andrey Lebedev ◽  
Yuri Tairov
Keyword(s):  
Thermal Expansion ◽  
Single Crystal ◽  
Elastic Energy ◽  
Elastic Moduli ◽  
Elastic Stress ◽  
Cooling Process ◽  
Synthetic Graphite ◽  
The Difference

The specific elastic energy (SEE) of the system "SiC single crystal on graphite holder", caused by cooling process due to difference in coefficients of thermal expansion (CTE), is simulated. The dependence of SEE and corresponding elastic stress of SiC single crystal attached to the graphite holder on thickness of holder and SiC crystal is considered. The parameters of the synthetic graphite that can be used for the minimizing the stress are analyzed.

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