scholarly journals Supplement to s110-XCE01-W181. Radiation effects on electronics. Preliminary guidelines for designing electronics for operation in a radiation environment

1969 ◽  
Author(s):  
Keyword(s):  
Radiation Effects ◽  
Radiation Environment

scholarly journals SEE Sensitivity Evaluation for Commercial 16 nm SRAM-FPGA

Electronics ◽  
2019 ◽  
Vol 8 (12) ◽  
pp. 1531 ◽  
Author(s):  
Chang Cai ◽  
Shuai Gao ◽  
Peixiong Zhao ◽  
Jian Yu ◽  
Kai Zhao ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Cross Sections ◽  
Radiation Effects ◽  
Large Scale ◽  
Random Access ◽  
Radiation Sensitivity ◽  
Heavy Ion ◽  
High Energy ◽  
Radiation Environment ◽  
Single Event

Radiation effects can induce severe and diverse soft errors in digital circuits and systems. A Xilinx commercial 16 nm FinFET static random-access memory (SRAM)-based field-programmable gate array (FPGA) was selected to evaluate the radiation sensitivity and promote the space application of FinFET ultra large-scale integrated circuits (ULSI). Picosecond pulsed laser and high energy heavy ions were employed for irradiation. Before the tests, SRAM-based configure RAMs (CRAMs) were initialized and configured. The 100% embedded block RAMs (BRAMs) were utilized based on the Vivado implementation of the compiled hardware description language. No hard error was observed in both the laser and heavy-ion test. The thresholds for laser-induced single event upset (SEU) were ~3.5 nJ, and the SEU cross-sections were correlated positively to the laser’s energy. Multi-bit upsets were measured in heavy-ion and high-energy laser irradiation. Moreover, latch-up and functional interrupt phenomena were common, especially in the heavy-ion tests. The single event effect results for the 16 nm FinFET process were significant, and some radiation tolerance strategies were required in a radiation environment.

scholarly journals Active Compensation of Radiation Effects on Optical Fibers for Sensing Applications

Sensors ◽  
2021 ◽  
Vol 21 (24) ◽  
pp. 8193
Author(s):  
Sohel Rana ◽  
Austin Fleming ◽  
Nirmala Kandadai ◽  
Harish Subbaraman
Keyword(s):  
Optical Fibers ◽  
Radiation Effects ◽  
Accurate Determination ◽  
Radiation Environment ◽  
Physical Parameters ◽  
Air Cavity ◽  
Sensing Applications ◽  
Fabry Perot ◽  
Radiation Induced

Neutron and gamma irradiation is known to compact silica, resulting in macroscopic changes in refractive index (RI) and geometric structure. The change in RI and linear compaction in a radiation environment is caused by three well-known mechanisms: (i) radiation-induced attenuation (RIA), (ii) radiation-induced compaction (RIC), and (iii) radiation-induced emission (RIE). These macroscopic changes induce errors in monitoring physical parameters such as temperature, pressure, and strain in optical fiber-based sensors, which limit their application in radiation environments. We present a cascaded Fabry–Perot interferometer (FPI) technique to measure macroscopic properties, such as radiation-induced change in RI and length compaction in real time to actively account for sensor drift. The proposed cascaded FPI consists of two cavities: the first cavity is an air cavity, and the second is a silica cavity. The length compaction from the air cavity is used to deduce the RI change within the silica cavity. We utilize fast Fourier transform (FFT) algorithm and two bandpass filters for the signal extraction of each cavity. Inclusion of such a simple cascaded FPI structure will enable accurate determination of physical parameters under the test.

Radiation Shielding Analysis for Various Materials in the Extreme Jovian Environment

2006 ◽  
Vol 929 ◽  
Author(s):  
William Atwell
Keyword(s):  
Radiation Effects ◽  
Absorbed Dose ◽  
High Energy ◽  
Radiation Shielding ◽  
Radiation Environment ◽  
High Energy Particle ◽  
Dose Calculations ◽  
Environment Model ◽  
Computer Codes ◽  
Trapped Radiation

ABSTRACTEarlier particle experiments in the 1970s on Pioneer-10 and -11 and Voyager-1 and -2 provided Jupiter flyby particle data, which were used by Divine and Garrett to develop the first Jupiter trapped radiation environment model. This model was used to establish a baseline radiation effects design limit for the Galileo onboard electronics. Recently, Garrett et al. have developed an updated Galileo Interim Radiation Environment (GIRE) model based on Galileo electron data. In this paper, the GIRE model was utilized to generate trapped proton and electron spectra as a function of Rj (Rj = radius of Jupiter = ∼71,400 km). Using these spectra and a high-energy particle transport codes (MCNPX and HZETRN), radiation exposures and dose effects for a variety of shielding materials (Al, polyethylene [PE], and Ta plus several other elemental materials for “Graded-Z” portion of the paper) and thicknesses are presented for the Icy Moon, Europa, Ganymede, and Callisto for several orbital inclinations. In addition, an in-depth discussion and absorbed dose calculations are presented for “Graded-Z” materials and several computer codes were utilized for comparison purposes. We find overall there is generally quite good agreement between the various computer codes utilized in the study: MCNPX (Monte Carlo) vs. HZETRN (deterministic) for slab shielding and the comparison of “Graded-Z” shielding using the CEPXS, NOVICE, and NASA JPL codes. Finally, we conclude that the merits of using “Graded-Z” materials that include PE, due to cost and weight, should aid future Jupiter mission planners and spacecraft designers.

Materials Performance in a Radiation Environment

MRS Bulletin ◽  
1997 ◽  
Vol 22 (4) ◽  
pp. 11-13 ◽  
Author(s):  
Frank W. Clinard
Keyword(s):  
Heavy Ions ◽  
Radiation Effects ◽  
Materials Science ◽  
Operating Conditions ◽  
Radiation Environment ◽  
Fast Neutrons ◽  
Fusion Reactors ◽  
Radiation Fields ◽  
Fission Reactors ◽  
Thermal And Fast Neutrons

An important part of materials science is the study of the behavior of materials under difficult environmental conditions. Some operating conditions have been traditional objects of study—for example, high temperatures and corrosive atmospheres. The study of materials in radiation environments gained particular significance after the advent of nuclear reactors, and radiation has joined the list of insults to which materials are subjected. Technological applications that involve significant levels of radiation include but are not limited to fission reactors, proposed fusion reactors, nuclear waste, ion accelerators, and spacecraft, with types of radiation encompassing thermal and fast neutrons, light and heavy ions, and energetic photons. More detailed information on applications and accompanying radiation fields appears in the articles published in this issue of MRS Bulletin and in the references listed under Further Reading.The four theme articles in this issue focus on radiation effects in four families of materials commonly used in radiation environments: metals, ceramics, graphite and carbon-based materials, and polymers.

Characterization of Swept Synthetic High Quality Quartz Crystal

2014 ◽  
Vol 633 ◽  
pp. 326-329
Author(s):  
Shao Feng Zhang ◽  
Ji Wu Shang
Keyword(s):  
Radiation Effects ◽  
Quartz Crystal ◽  
Ionic Conduction ◽  
Promising Result ◽  
Temperature Stability ◽  
Radiation Environment ◽  
Thermal Coefficient ◽  
Space Applications ◽  
Wide Range ◽  
Voltage Current Characteristic

The synthetic quartz crystal is widely utilized in electronic and optical components due to its high frequency and temperature stability, good dielectric properties, low thermal coefficient of linear expansion, and wide range of optical transparency. However, radiation effects due to cosmic rays are responsible for a frequency shift for quartz oscillators in space systems, which impair their performance. Sweeping quartz at high electric field is a well-established method for improving device performance in a radiation environment. The present paper focuses on the voltage current characteristic of swept quartz. First, the sweeping conduction mechanism is ionic conduction. Second, as the voltage increases, the current increases first, then decreases, and then increases. ICP-AES results indicated that the sweeping process make Na+ a oriented locomotion. Third, the etch channel tensity is obviously reduced to less than 3/cm3, which is a very promising result for space applications. Moreover, the radiation resistance properties are improved after electrical sweeping.

Quantification of the Radiation Effects on the Stability of the Irradiated Plants Development in Light Culture

2020 ◽  
Vol 67 (1) ◽  
pp. 64-70
Author(s):  
Sergey A. Rakutko ◽  
Elena N. Rakutko
Keyword(s):  
Optical Density ◽  
Plant Development ◽  
Radiation Effects ◽  
Radiation Environment ◽  
Light Sources ◽  
Cucumis Sativus L ◽  
Environmental Friendliness ◽  
Physiological Processes ◽  
Blue Range ◽  
The Stability

The radiation environment parameters affect not only individual biochemical reactions and physiological processes occurring in the plant, but also make it possible to achieve stable plant development as a whole. (Research purpose) To develop a method, technical means and methodology for the quantitative assessment of the optical radiation effect on plants, the use of which ensures energy efficiency and environmental friendliness of the resulting product by choosing the most optimal light source. (Materials and methods) The authors demonstrated that the stability of plant development can be characterized by fluctuating asymmetry indices, the values of which form uneven optical density on both sides of the leaf. They developed and manufactured an experimental model of a device for measuring leaves' optical density. They studied the cucumber (Cucumis sativus L.) of the Safa mix F1 mid-early hybrid. They used plants in a juvenile age state to reduce the duration of the experiment, that means from the appearance of the first to the appearance of the second leaf. (Results and discussion) The authors found that the differences between the parameters of plants grown under light sources № 1 and № 2 are not significant. They took the parameters of plants grown under light sources № 1 and № 3 for comparison. It was determined that these sources have approximately the same flow shares in the blue range (27.4 and 26.2 percent). They found out that the flow shares in the red range are different (34.4 and 49.5 percent), which determined different values of the ratio R:B (1.3 and 1.9). It was noted that the values of the ratio R: FR (4.1 and 16.3) are also different. (Conclusions) The authors proposed a method for assessing the effect of radiation on plants by the stability of their development. It was established that the application of this method to plants grown under conditions of light culture is promising for a comprehensive assessment of the quality of the light medium created by radiation sources; allows to choose the most optimal light sources.

scholarly journals Phase Transformation by 100 keV Electron Irradiation in Partially Stabilized Zirconia

2021 ◽  
Vol 5 (3) ◽  
pp. 20
Author(s):  
Yasuki Okuno ◽  
Nariaki Okubo
Keyword(s):  
Phase Transition ◽  
Radiation Effects ◽  
Oxygen Sensor ◽  
Heavy Ion ◽  
Radiation Environment ◽  
Liquid Lead ◽  
Stabilized Zirconia ◽  
Partially Stabilized Zirconia ◽  
Sensor Material ◽  
Deposition Energy

Partially stabilized zirconia (PSZ) is considered for use as an oxygen-sensor material in liquid lead-bismuth eutectic (LBE) alloys in the radiation environment of an acceleration-driven system (ADS). To predict its lifetime for operating in an ADS, the effects of radiation on the PSZ were clarified in this study. A tetragonal PSZ was irradiated with 100 keV electrons and analyzed by X-ray diffraction (XRD). The results indicate that the phase transition in the PSZ, from the tetragonal to the monoclinic phase, was caused after the irradiation. The deposition energy of the lattice and the deposition energy for the displacement damage of a 100 keV electron in the PSZ are estimated using the particle and heavy ion transport code system and the non-ionizing energy loss, respectively. The results suggest that conventional radiation effects, such as stopping power, are not the main mechanism behind the phase transition. The phase transition is known to be caused by the low-temperature degradation of the PSZ and is attributed to the shift of oxygen ions to oxygen sites. When the electron beam is incident to the material, the kinetic energy deposition and excitation-related processes are caused, and it is suggested to be a factor of the phase transition.

Sign in / Sign up

Export Citation Format

Share Document