scholarly journals HIGH-PURITY SHAPE CASTING WITH AN ELECTRON-BEAM FURNACE.

1967 ◽  
Author(s):  
C.W. Dean ◽  
R.E. McDonald
Keyword(s):  
Electron Beam ◽  
High Purity

High-purity 3D nano-objects grown by focused-electron-beam induced deposition

2016 ◽  
Vol 27 (35) ◽  
pp. 355301 ◽  
Author(s):  
Rosa Córdoba ◽  
Nidhi Sharma ◽  
Sebastian Kölling ◽  
Paul M Koenraad ◽  
Bert Koopmans
Keyword(s):  
Electron Beam ◽  
High Purity ◽  
Electron Beam Induced Deposition

scholarly journals High-resolution, High-purity Calix[n]arene Electron Beam Resist.

2000 ◽  
Vol 13 (3) ◽  
pp. 413-417 ◽  
Author(s):  
Yukinori Ochiai ◽  
Shoko Manako ◽  
Hiromasa Yamamoto ◽  
Takahiro Teshima ◽  
Jun-ichi Fujita ◽  
...  
Keyword(s):  
Electron Beam ◽  
High Resolution ◽  
High Purity

Structural features of high purity silicon prepared by electron-beam refining of metallurgical-grade silicon

Metallurgist ◽  
2011 ◽  
Vol 55 (7-8) ◽  
pp. 607-614 ◽  
Author(s):  
V. A. Osokin ◽  
V. A. Panibratskii ◽  
P. A. Shpak ◽  
E. L. Piyuk
Keyword(s):  
Electron Beam ◽  
High Purity ◽  
Structural Features ◽  
Metallurgical Grade Silicon ◽  
High Purity Silicon ◽  
Grade Silicon

High-purity cobalt nanostructures grown by focused-electron-beam-induced deposition at low current

2010 ◽  
Vol 87 (5-8) ◽  
pp. 1550-1553 ◽  
Author(s):  
R. Córdoba ◽  
J. Sesé ◽  
J.M. De Teresa ◽  
M.R. Ibarra
Keyword(s):  
Electron Beam ◽  
High Purity ◽  
Electron Beam Induced Deposition ◽  
Cobalt Nanostructures

scholarly journals Minority Carrier Diffusion Lengths for High Purity Liquid Phase Epitaxial GaAs

1993 ◽  
Vol 46 (2) ◽  
pp. 317 ◽  
Author(s):  
KSA Butcher ◽  
D Alexiev ◽  
TL Tansley
Keyword(s):  
Electron Beam ◽  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
High Purity ◽  
Minority Carrier ◽  
Induced Current ◽  
Carrier Diffusion ◽  
Nuclear Science ◽  
Electron Beam Induced Current ◽  
P Type

Measurements of minority carrier diffusion lengths for p-type and n-type GaAs were carried out using an electron beam induced current (EBIC) technique. The GaAs material was grown by liquid phase epitaxy (LPE) at the Australian Nuclear Science and Technology Organisation. The diffusion lengths measured for high purity p-type and n-type LPE-GaAs samples were observed to be longer than any previously reported.

TEM -analysis of the BeO-dispersion in high purity Be-ingots

1978 ◽  
Vol 36 (1) ◽  
pp. 636-637
Author(s):  
Hans Migge
Keyword(s):  
Mechanical Properties ◽  
Electron Beam ◽  
Oxide Scale ◽  
High Purity ◽  
Ultrahigh Vacuum ◽  
Particle Sizes ◽  
Tem Analysis ◽  
Tremendous Importance ◽  
Thin Oxide ◽  
To Come

Inclusions of BeO are of tremendous importance on the mechanical properties of Beryllium [1,2]. The BeO particle sizes of different hot pressed materials are in the range between 400 Å and 10 μm for BeO contents between 0.5 and 3.6%[3]. However, there is no investigation about the BeO dispersion in high purity (<200 ppm BeO) ingots. Information on this subject should be derived from the diffuse Debye rings of BeO, which as yet are thought to come from the very thin oxide scale on the Be-surface [3].0.1 mm foils of Berylco IF—1 from KBI with BeO < 200 ppm were analyzed at 100 kV in the as received condition or after annealing for 1 hour at 900°C in ultrahigh vacuum. With the electron beam parallel to [00.1], [11.1], [02.1], [12.1], [03.1], [12.2] (using different grains) always four diffuse BeO rings of the type {10.0}, {10.1}, {11.0}and the unresolved {20.0}/{11.2} appear in the SAD-pattern.

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