scholarly journals Optical spectroscopic studies of metal atoms and molecules in the low temperature matrices

1970 ◽  
Author(s):  
Chin -An Chang
Keyword(s):  
Low Temperature ◽  
Spectroscopic Studies ◽  
Atoms And Molecules ◽  
Metal Atoms

Molecular orbital and spectroscopic studies of triple bonds between transition-metal atoms. 2. The d5-d5 Re2Cl4(PR3)4 compounds

1983 ◽  
Vol 105 (9) ◽  
pp. 2606-2611 ◽  
Author(s):  
Bruce E. Bursten ◽  
F. Albert Cotton ◽  
Phillip E. Fanwick ◽  
George G. Stanley ◽  
Richard A. Walton
Keyword(s):  
Transition Metal ◽  
Molecular Orbital ◽  
Spectroscopic Studies ◽  
Triple Bonds ◽  
Metal Atoms ◽  
Transition Metal Atoms

Low-Temperature Diffusion of Transition Metals at the Presence of Radiation Defects in Silicon

2011 ◽  
Vol 178-179 ◽  
pp. 421-426
Author(s):  
Jan Vobecký ◽  
Volodymyr Komarnitskyy ◽  
Vít Záhlava ◽  
Pavel Hazdra
Keyword(s):  
Low Temperature ◽  
Active Sites ◽  
Carrier Lifetime ◽  
High Energy ◽  
Deep Levels ◽  
Radiation Defects ◽  
Metal Atoms ◽  
Temperature Diffusion ◽  
Concentration Enhancement ◽  
Application Potential

Low-temperature diffusion of Cr, Mo, Ni, Pd, Pt, and V in silicon diodes is compared in the range 450 - 800 oC. Before the diffusion, the diodes were implanted with high-energy He2+ to assess, if the radiation defects enhance the concentration of metal atoms at electrically active sites and what is the application potential for carrier lifetime control. The devices were characterized using AES, XPS, DLTS, OCVD carrier lifetime and diode electrical parameters. The metal atoms are divided into two groups. The Pt, Pd and V form deep levels in increased extent at the presence of radiation defects above 600 oC, which reduces the excess carrier lifetime. It is shown as a special case that the co-diffusion of Ni and V from a NiV surface layer results fully in the concentration enhancement of the V atoms. The enhancement of the acceptor level V-/0 (EC 0.203 eV) and donor level V0/+ (EC 0.442 eV) resembles the behavior of substitutional Pts. The second group is represented by the Mo and Cr. They easily form oxides, which can make their diffusion into a bulk more difficult or impossible. Only a slight enhancement of the Cr-related deep levels by the radiation defects has been found above 700 oC.

scholarly journals Characterising molecules for fundamental physics: an accurate spectroscopic model of methyltrioxorhenium derived from new infrared and millimetre-wave measurements

2017 ◽  
Vol 19 (6) ◽  
pp. 4576-4587 ◽  
Author(s):  
Pierre Asselin ◽  
Yann Berger ◽  
Thérèse R. Huet ◽  
Laurent Margulès ◽  
Roman Motiyenko ◽  
...  
Keyword(s):  
Low Temperature ◽  
Parity Violation ◽  
Spectroscopic Studies ◽  
Fundamental Physics ◽  
Millimetre Wave ◽  
Wave Measurements ◽  
Infrared Spectroscopic

Low temperature infrared spectroscopic studies are used to improve our understanding of the structure of methyltrioxorhenium in the context of molecular parity violation measurements.

Sign in / Sign up

Export Citation Format

Share Document