Radiation hardened fiber optics for fusion reactor diagnostic systems. Final technical report

The low Z metal aluminium is a potential matrix material for the first wall in fusion reactors. A drawback in the application of A1 is the rel= atively high amount of He produced in it under fusion reactor conditions. Knowledge about the behaviour of He during irradiation and deformation in Al, especially near the surface, is therefore important.Using the TEM we have studied Al disks of 3 mm diameter and 0.2 mm thickness, which were perforated at the centre by double jet polishing. These disks were bombarded at∽200°C to various doses with α-particles, impinging at any angle and energy up to 1.5 MeV at both surfaces. The details of the irradiations are described in Ref.1. Subsequent observation indicated that in such specimens uniformly distributed He-bubbles are formed near the surface in a layer several μm thick (Fig.1).After bombardment the disks were deformed at 20°C during observation by means of a tensile device in a Philips EM 300 microscope.

Download Full-text

Structural changes in silicon-on-insulator material during post-implantation annealing

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100145054 ◽

1986 ◽

Vol 44 ◽

pp. 736-737

Author(s):

C. O. Jung ◽

S. J. Krause ◽

S.R. Wilson

Keyword(s):

Integrated Circuits ◽

Oxide Layer ◽

High Speed ◽

Structural Changes ◽

Device Fabrication ◽

Silicon On Insulator ◽

High Quality ◽

Radiation Hardened ◽

Post Implantation ◽

Very High

Silicon-on-insulator (SOI) structures have excellent potential for future use in radiation hardened and high speed integrated circuits. For device fabrication in SOI material a high quality superficial Si layer above a buried oxide layer is required. Recently, Celler et al. reported that post-implantation annealing of oxygen implanted SOI at very high temperatures would eliminate virtually all defects and precipiates in the superficial Si layer. In this work we are reporting on the effect of three different post implantation annealing cycles on the structure of oxygen implanted SOI samples which were implanted under the same conditions.

Download Full-text