scholarly journals P-type and N-type doping in GaSb and Ga{sub 0.8}In{sub 0.2}Sb layers grown by metalorganic vapor phase epitaxy

1998 ◽  
Author(s):  
H. Ehsani ◽  
I. Bhat ◽  
C. Hitchcock ◽  
R.J. Gutmann ◽  
G. Charache ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
P Type

Growth of p-type ZnSe by metalorganic vapor phase epitaxy using ethylazide as a new nitrogen source

1996 ◽  
Vol 159 (1-4) ◽  
pp. 130-133 ◽  
Author(s):  
K. Inoue ◽  
K. Yanashima ◽  
T. Takahashi ◽  
J.S. Hwang ◽  
K. Hara ◽  
...  
Keyword(s):  
Nitrogen Source ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
P Type

scholarly journals Retraction: “Hall-effect measurements of metalorganic vapor-phase epitaxy-grown p-type homoepitaxial GaN layers with various Mg concentrations”

2016 ◽  
Vol 55 (11) ◽  
pp. 119201
Author(s):  
Masahiro Horita ◽  
Shinya Takashima ◽  
Ryo Tanaka ◽  
Hideaki Matsuyama ◽  
Katsunori Ueno ◽  
...  
Keyword(s):  
Hall Effect ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Hall Effect Measurements ◽  
P Type

Electrical and crystalline properties of as-grown p-type GaN grown by metalorganic vapor phase epitaxy

2003 ◽  
Vol 248 ◽  
pp. 503-506 ◽  
Author(s):  
S. Yamaguchi ◽  
Y. Iwamura ◽  
Y. Watanabe ◽  
M. Kosaki ◽  
Y. Yukawa ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
P Type

Metalorganic vapor phase epitaxy growth of p-type ZnSSe and its application for blue-green lasers

1994 ◽  
Vol 138 (1-4) ◽  
pp. 755-758 ◽  
Author(s):  
K. Yanashima ◽  
D. Yamasaki ◽  
S. Watabe ◽  
K. Hara ◽  
J. Yoshino ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
P Type

P-Type GaN Directly Grown by Low Pressure Metalorganic Vapor Phase Epitaxy

1997 ◽  
Vol 14 (8) ◽  
pp. 637-640 ◽  
Author(s):  
Zhang Guo-yi ◽  
Yang Zhi-jian ◽  
Tong Yu-zhen ◽  
Jin Si-xuan ◽  
Dang Xiao-zhong ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Low Pressure ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
P Type

Effects of Mg/Ga and V/III source ratios on hole concentration of N-polar $(000\bar{1})$ p-type GaN grown by metalorganic vapor phase epitaxy

2016 ◽  
Vol 55 (5S) ◽  
pp. 05FE01 ◽  
Author(s):  
Ryohei Nonoda ◽  
Kanako Shojiki ◽  
Tomoyuki Tanikawa ◽  
Shigeyuki Kuboya ◽  
Ryuji Katayama ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Hole Concentration ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
P Type
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