scholarly journals Statistically-averaged rate equations for intense nonneutral beam propagation through a periodic solenoidal focusing field based on the nonlinear Vlasov-Maxwell equations

1997 ◽  
Author(s):  
R.C. Davidson ◽  
W.W. Lee ◽  
P. Stoltz
Keyword(s):  
Maxwell Equations ◽  
Beam Propagation ◽  
Rate Equations

scholarly journals Implications of the electrostatic approximation in the beam frame on the nonlinear Vlasov–Maxwell equations for intense beam propagation

2002 ◽  
Vol 9 (1) ◽  
pp. 340-344 ◽  
Author(s):  
Ronald C. Davidson ◽  
W. Wei-li Lee ◽  
Hong Qin ◽  
Edward Startsev
Keyword(s):  
Maxwell Equations ◽  
Beam Propagation ◽  
Intense Beam ◽  
Beam Frame

Dielectronic Recombination in the Average-Atom Model

1988 ◽  
Vol 102 ◽  
pp. 215
Author(s):  
R.M. More ◽  
G.B. Zimmerman ◽  
Z. Zinamon
Keyword(s):  
Detailed Balance ◽  
Systematic Errors ◽  
Dielectronic Recombination ◽  
Rate Equations ◽  
Strong Correlations ◽  
Dense Plasmas ◽  
Atom Model ◽  
New Feature ◽  
Average Atom Model ◽  
Attachment Process

Autoionization and dielectronic attachment are usually omitted from rate equations for the non–LTE average–atom model, causing systematic errors in predicted ionization states and electronic populations for atoms in hot dense plasmas produced by laser irradiation of solid targets. We formulate a method by which dielectronic recombination can be included in average–atom calculations without conflict with the principle of detailed balance. The essential new feature in this extended average atom model is a treatment of strong correlations of electron populations induced by the dielectronic attachment process.

On the interpretation of dislocation-loop growth during in-situ high-voltage Electron Microscopy

1990 ◽  
Vol 48 (4) ◽  
pp. 532-533
Author(s):  
E. Holzäpfel ◽  
F. Phillipp ◽  
M. Wilkens
Keyword(s):  
Point Defect ◽  
Rate Equations ◽  
Rate Theory ◽  
Dislocation Loops ◽  
High Voltage Electron Microscopy ◽  
Vacancy Migration ◽  
Voltage Electron ◽  
Reaction Rate Theory ◽  
Defect Reactions

During in-situ radiation damage experiments aiming on the investigation of vacancy-migration properties interstitial-type dislocation loops are used as probes monitoring the development of the point defect concentrations. The temperature dependence of the loop-growth rate v is analyzed in terms of reaction-rate theory yielding information on the vacancy migration enthalpy. The relation between v and the point-defect production rate P provides a critical test of such a treatment since it is sensitive to the defect reactions which are dominant. If mutual recombination of vacancies and interstitials is the dominant reaction, vαP0.5 holds. If, however, annihilation of the defects at unsaturable sinks determines the concentrations, a linear relationship vαP is expected.Detailed studies in pure bcc-metals yielded vαPx with 0.7≾×≾1.0 showing that besides recombination of vacancies and interstitials annihilation at sinks plays an important role in the concentration development which has properly to be incorporated into the rate equations.

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