scholarly journals Parametric study of compound semiconductor etching utilizing inductively coupled plasma source

1996 ◽  
Author(s):  
C. Constantine ◽  
D. Johnson ◽  
C. Barratt
Keyword(s):  
Parametric Study ◽  
Inductively Coupled Plasma ◽  
Plasma Source ◽  
Compound Semiconductor ◽  
Inductively Coupled ◽  
Semiconductor Etching

scholarly journals Parametric Study of Compound Semiconductor Etching Utilizing Inductively Coupled Plasma Source

1996 ◽  
Vol 421 ◽  
Author(s):  
C. Constantine ◽  
D. Johnson ◽  
C. Barratt ◽  
R. J. Shul ◽  
G. B. Mcclellan ◽  
...  
Keyword(s):  
Cyclotron Resonance ◽  
Inductively Coupled Plasma ◽  
Electron Cyclotron Resonance ◽  
Plasma Source ◽  
Large Area ◽  
Inductively Coupled ◽  
Semiconductor Etching ◽  
Deposition Processes ◽  
Gan Etching ◽  
Very High

AbstractInductively Coupled Plasma (ICP) sources are extremely promising for large-area, highion density etching or deposition processes. In this review we compare results for GaAs and GaN etching with both ICP and Electron Cyclotron Resonance (ECR) sources on the same singlewafer platform. The ICP is shown to be capable of very high rates with excellent anisotropy for fabrication of GaAs vias or deep mesas in GaAs or GaN waveguide structures.

Temperature Determination on a 9.2 MHz Inductively Coupled Plasma Source Using N2+ Bands as Monitor

1978 ◽  
Vol 32 (6) ◽  
pp. 572-576 ◽  
Author(s):  
P. B. Zeeman ◽  
S. P. Terblanche ◽  
K. Visser ◽  
F. H. Hamm
Keyword(s):  
Inductively Coupled Plasma ◽  
Band System ◽  
Plasma Source ◽  
Temperature Determination ◽  
First Order ◽  
Inductively Coupled ◽  
Plasma Tail

In recent experiments with a 9.2 MHz inductively coupled plasma assembly air was used as cooling gas. The molecular N2+ band system appeared on the photographic plates taken in the first order of a 3.4 m Jarrell-Ash Ebert grating spectrograph. The rotational lines of this band system was used to evaluate the temperature of the plasma tail flame at various heights above the load coil. These varied from approximately 8000°K at 17 mm above the coil to 6400 at 41 mm.

Simulations of a Feedback Control Scheme for an Inductively Coupled Plasma Source for Etching Applications

1996 ◽  
Vol 143 (4) ◽  
pp. 1375-1383 ◽  
Author(s):  
Naoki Yamada ◽  
Peter L. G. Ventzek ◽  
Y. Sakai ◽  
H. Tagashira ◽  
K. Kitamori
Keyword(s):  
Feedback Control ◽  
Inductively Coupled Plasma ◽  
Plasma Source ◽  
Inductively Coupled ◽  
Control Scheme
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