scholarly journals Stark effects on band gap and surface phonons of semiconductor quantum dots in dielectric hosts

1996 ◽  
Author(s):  
R. Mu ◽  
A. Ueda ◽  
Y.S. Tung ◽  
D.O. Henderson ◽  
J.G. Zhu ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Band Gap ◽  
Semiconductor Quantum Dots ◽  
Stark Effects ◽  
Surface Phonons

Quantum-confined Stark effects in semiconductor quantum dots

1995 ◽  
Vol 52 (8) ◽  
pp. 5913-5922 ◽  
Author(s):  
G. W. Wen ◽  
J. Y. Lin ◽  
H. X. Jiang ◽  
Z. Chen
Keyword(s):  
Quantum Dots ◽  
Semiconductor Quantum Dots ◽  
Stark Effects ◽  
Quantum Confined

Quantum-confined Stark effects in interdiffused semiconductor quantum dots

2007 ◽  
Author(s):  
Yang Wang ◽  
David Negro ◽  
Hery S. Djie ◽  
Boon S. Ooi
Keyword(s):  
Quantum Dots ◽  
Semiconductor Quantum Dots ◽  
Stark Effects ◽  
Quantum Confined

DEPENDENCE OF THE ABSORPTION SPECTRA OF III–V SEMICONDUCTOR QUANTUM DOTS ON THE FUNDAMENTAL PARAMETERS

2010 ◽  
Vol 09 (04) ◽  
pp. 345-349 ◽  
Author(s):  
SUBINDU KUMAR ◽  
SANJIB KABI
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Band Gap ◽  
Size Distribution ◽  
Absorption Spectra ◽  
Density Of States ◽  
Semiconductor Quantum Dots ◽  
Band Offset ◽  
Fundamental Parameters

The absorption spectra of semiconductor quantum dots (QDs) are expected to be a series of δ-function-like discrete lines due to the nature of the density of states. In a realistic III–V QD system, the absorption spectra is the superimposition of the contribution from each individual dot and the overall behavior is modeled by considering a Gaussian size distribution. In this paper, we study and present the dependence of the Gaussian nature of the absorption spectra of In X Ga 1-X N/GaN QD systems on the dot size distribution and some fundamental parameters such as bowing effect of the band gap, band offset ratio, and so on. It is observed that the absorption spectra depend strongly on the dot size distribution. The results presented helps to get a better insight of the optical properties of In X Ga 1-X N/GaN QD systems.

scholarly journals Reabsorption Losses in Luminescent Solar Concentrators: Effect of the Band Gap of Semiconductor Quantum Dots, their Size and Dispersion

2017 ◽  
Vol 1 (15) ◽  
pp. 313-315
Author(s):  
A.I. Shkrebtii ◽  
A.V. Sachenko ◽  
I.O. Sokolovskyi ◽  
V.P. Kostylyov ◽  
M.R. Kulish ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Band Gap ◽  
Semiconductor Quantum Dots ◽  
Solar Concentrators ◽  
Luminescent Solar Concentrators

Semiconductor Quantum Dots for Multicolor Fluorescence Imaging and Spectroscopy of Single Cancer Cells

2003 ◽  
Vol 773 ◽  
Author(s):  
Xiaohu Gao ◽  
Shuming Nie ◽  
Wallace H. Coulter
Keyword(s):  
Quantum Dots ◽  
Cancer Cells ◽  
Fluorescence Imaging ◽  
Organic Dyes ◽  
Fluorescent Proteins ◽  
Single Cells ◽  
Quantitative Imaging ◽  
Semiconductor Quantum Dots ◽  
Single Cancer ◽  
Imaging And Spectroscopy

AbstractLuminescent quantum dots (QDs) are emerging as a new class of biological labels with unique properties and applications that are not available from traditional organic dyes and fluorescent proteins. Here we report new developments in using semiconductor quantum dots for quantitative imaging and spectroscopy of single cancer cells. We show that both live and fixed cells can be labeled with multicolor QDs, and that single cells can be analyzed by fluorescence imaging and wavelength-resolved spectroscopy. These results raise new possibilities in cancer imaging, molecular profiling, and disease staging.

Hot Topic and Challenge of Semiconductor Quantum Dots as Fluorescence Labels*

2010 ◽  
Vol 37 (1) ◽  
pp. 103-110 ◽  
Author(s):  
Chang-Yan LI ◽  
Qian LI ◽  
Hai-Tao LIU ◽  
Jun ZHANG ◽  
DAMIRIN Aletangaole
Keyword(s):  
Quantum Dots ◽  
Semiconductor Quantum Dots
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