scholarly journals LLNL vapor phase manufacturing progress report, June--December 1995

1996 ◽  
Author(s):  
T. Anklam ◽  
J. Benterou ◽  
L. Berzins ◽  
D. Braun ◽  
C. Haynam ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Progress Report

Modified Vapor Phase Growth of Cadmium Zinc Telluride: A Progress Report

1997 ◽  
Vol 487 ◽  
Author(s):  
W. P. Trower
Keyword(s):  
Vapor Phase ◽  
Electron Mobility ◽  
Cadmium Zinc Telluride ◽  
Zinc Telluride ◽  
Progress Report ◽  
Growth Surface ◽  
Phase Growth ◽  
Vapor Phase Growth ◽  
Series Of Experiments ◽  
Cadmium Zinc

AbstractWe have completed a series of experiments where we realized Cd(1−x)ZnxTe by modified Vapor Phase Growth in which the CdTe and ZnTe components were separated in the growth ampoule, with their vapors passing through channels and openings designed to mix them stoichiometrically at the growth surface. We have obtained polycrystalline CZT boules 50 mm in diameter and 10 mm high whose structure is strikingly different from that obtained by standard High Pressure Bridgman methods. Our mVPG properties relevant for detector applications include resistivity of∼40 GΩ-cm when voltage is first applied, rising to ∼66 GΩ-cm after ∼20 min when the traps are filled, and electron mobility-lifetimes of∼2 × 10−3 cm2/ν. Here we present some structural and operational characterizations of our mVPG CZT.

scholarly journals VAPOR PHASE CHLORINATION OF TO3 UO3. Progress Report

1945 ◽  
Author(s):  
G. S. Parsons ◽  
C. L. McCabe ◽  
G. F. Engle ◽  
C. E. Larson
Keyword(s):  
Vapor Phase ◽  
Progress Report

Spectrophotometric measurements of objective-prism spectra

1966 ◽  
Vol 24 ◽  
pp. 118-119
Author(s):  
Th. Schmidt-Kaler
Keyword(s):  
Progress Report ◽  
Two Dimensional ◽  
Objective Prism ◽  
Made In

I should like to give you a very condensed progress report on some spectrophotometric measurements of objective-prism spectra made in collaboration with H. Leicher at Bonn. The procedure used is almost completely automatic. The measurements are made with the help of a semi-automatic fully digitized registering microphotometer constructed by Hög-Hamburg. The reductions are carried out with the aid of a number of interconnected programmes written for the computer IBM 7090, beginning with the output of the photometer in the form of punched cards and ending with the printing-out of the final two-dimensional classifications.

Progress report on 21-cm observations at low latitude between longitudes (l 11) 0° and 66°

1967 ◽  
Vol 31 ◽  
pp. 177-179
Author(s):  
W. W. Shane
Keyword(s):  
Preliminary Report ◽  
Progress Report ◽  
Galactic Centre ◽  
Low Latitude ◽  
The Third ◽  
Introductory Lecture ◽  
Centre Region

In the course of several 21-cm observing programmes being carried out by the Leiden Observatory with the 25-meter telescope at Dwingeloo, a fairly complete, though inhomogeneous, survey of the regionl11= 0° to 66° at low galactic latitudes is becoming available. The essential data on this survey are presented in Table 1. Oort (1967) has given a preliminary report on the first and third investigations. The third is discussed briefly by Kerr in his introductory lecture on the galactic centre region (Paper 42). Burton (1966) has published provisional results of the fifth investigation, and I have discussed the sixth in Paper 19. All of the observations listed in the table have been completed, but we plan to extend investigation 3 to a much finer grid of positions.

Planar defects in ordered (Ga,In)P

1988 ◽  
Vol 46 ◽  
pp. 902-903
Author(s):  
S. McKernan ◽  
C. B. Carter ◽  
D. Bour ◽  
J. R. Shealy
Keyword(s):  
Electron Diffraction ◽  
Vapor Phase ◽  
Growth Direction ◽  
High Density ◽  
Ordered Structure ◽  
Planar Defects ◽  
Diffraction Patterns ◽  
Ternary Semiconductors ◽  
Anion Species ◽  
Metallic Vapor

The growth of ternary III-V semiconductors by organo-metallic vapor phase epitaxy (OMVPE) is widely practiced. It has been generally assumed that the resulting structure is the same as that of the corresponding binary semiconductors, but with the two different cation or anion species randomly distributed on their appropriate sublattice sites. Recently several different ternary semiconductors including AlxGa1-xAs, Gaxln-1-xAs and Gaxln1-xP1-6 have been observed in ordered states. A common feature of these ordered compounds is that they contain a relatively high density of defects. This is evident in electron diffraction patterns from these materials where streaks, which are typically parallel to the growth direction, are associated with the extra reflections arising from the ordering. However, where the (Ga,ln)P epilayer is reasonably well ordered the streaking is extremely faint, and the intensity of the ordered spot at 1/2(111) is much greater than that at 1/2(111). In these cases it is possible to image relatively clearly many of the defects found in the ordered structure.

Eureka-project: 'totally implantable artificial larynx': progress report

1998 ◽  
Vol 23 (2) ◽  
pp. 187-187
Author(s):  
Verkerke ◽  
Schutte ◽  
Mahieu ◽  
Van Den Hoogen ◽  
De Vries ◽  
...  
Keyword(s):  
Progress Report ◽  
Artificial Larynx
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