Final Report: Developing a Low Cost, High Volume and Scalable Manufacturing Technology for Undoped and Heavily P-Type Doped CdTe Feedstock Materials

AbstractThe need for rapid, accurate, and scalable testing systems for COVID-19 diagnosis is clear and urgent. Here, we report a rapid Scalable and Portable Testing (SPOT) system consisting of a rapid, highly sensitive, and accurate assay and a battery-powered portable device for COVID-19 diagnosis. The SPOT assay comprises a one-pot reverse transcriptase-loop-mediated isothermal amplification (RT-LAMP) followed by PfAgo-based target sequence detection. It is capable of detecting the N gene and E gene in a multiplexed reaction with the limit of detection (LoD) of 0.44 copies/μL and 1.09 copies/μL, respectively, in SARS-CoV-2 virus-spiked saliva samples within 30 min. Moreover, the SPOT system is used to analyze 104 clinical saliva samples and identified 28/30 (93.3% sensitivity) SARS-CoV-2 positive samples (100% sensitivity if LoD is considered) and 73/74 (98.6% specificity) SARS-CoV-2 negative samples. This combination of speed, accuracy, sensitivity, and portability will enable high-volume, low-cost access to areas in need of urgent COVID-19 testing capabilities.

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High Volume Production Growth of GaAs on Silicon Substrates

MRS Proceedings ◽

10.1557/proc-67-197 ◽

1986 ◽

Vol 67 ◽

Cited By ~ 4

Author(s):

Chris R. Ito ◽

M. Feng ◽

V. K. Eu ◽

H. B. Kim

Keyword(s):

Schottky Diodes ◽

High Volume ◽

Wafer Surface ◽

Silicon Substrates ◽

Growth Technique ◽

Wafer Thickness ◽

Production Growth ◽

High Volume Production ◽

Volume Production ◽

P Type

ABSTRACTA high-volume epitaxial reactor has been used to investigate the feasibility for the production growth of GaAs on silicon substrates. The reactor is a customized system which has a maximum capacity of 39 three-inch diameter wafers and can accommodate substrates as large as eight inches in diameter. The MOCVD material growth technique was used to grow GaAs directly on p-type, (100) silicon substrates, three and five inches in diameter. The GaAs surfaces were textured with antiphase boundaries. Double-cyrstal rocking curve measurements showed single-cyrstal GaAs with an average FWHMof 520 arc seconds measured at four points over the wafer surface. Within-wafer thickness uniformity was ± 4% with a wafer-to-wafer uniformity of ± 2%. Photoluminescence spectra showed Tour peaks at 1.500, 1.483, 1.464, and 1.440 ev. Schottky diodes were fabricated on the GaAs on silicon material.

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Plastic Encapsulated MCM Technology for High Volume, Low Cost Electronics

Circuit World ◽

10.1108/eb046302 ◽

1995 ◽

Vol 21 (2) ◽

pp. 28-31 ◽

Cited By ~ 8

Author(s):

R. Fillion ◽

R. Wojnarowski ◽

T. Gorcyzca ◽

E. Wildi ◽

H. Cole

Keyword(s):

Low Cost ◽

High Volume

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Nickle Oxide Regulating Surface Oxygen to Promote Formaldehyde Oxidation on Manganese Oxide Catalyst

Catalysis Science & Technology ◽

10.1039/d1cy01490k ◽

2021 ◽

Author(s):

Hailin Zhao ◽

Jie Tang ◽

Zengyuan Li ◽

Jie Yang ◽

Hao Liu ◽

...

Keyword(s):

Manganese Oxide ◽

High Activity ◽

Catalytic Oxidation ◽

Oxide Catalyst ◽

Low Cost ◽

Surface Oxygen ◽

Formaldehyde Oxidation ◽

Type Semiconductor ◽

Manganese Oxide Catalyst ◽

P Type

Catalytic oxidation is the most effective method to eliminate the in-door formaldehyde, the Mn-based catalyst with low cost and high activity has drawn great attention. Herein, p-type semiconductor NiO doped...

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