scholarly journals Thermal Infrared Detectors: expanding performance limits using ultrafast electron microscopy.

2021 ◽  
Author(s):  
Albert Talin ◽  
Scott Ellis ◽  
Norman Bartelt ◽  
Francois Leonard ◽  
Christopher Perez ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Infrared Detectors ◽  
Thermal Infrared ◽  
Performance Limits

Adjustable responsivity for thermal infrared detectors

2002 ◽  
Vol 81 (3) ◽  
pp. 550-552 ◽  
Author(s):  
Woo-Bin Song ◽  
Joseph J. Talghader
Keyword(s):  
Infrared Detectors ◽  
Thermal Infrared

Absorbing layers for thermal infrared detectors

1992 ◽  
Vol 34 (3) ◽  
pp. 243-248 ◽  
Author(s):  
Walter Lang ◽  
Karl Kühl ◽  
Hermann Sandmaier
Keyword(s):  
Infrared Detectors ◽  
Thermal Infrared

Deposition and characterization of gold black coatings for thermal infrared detectors

2010 ◽  
Author(s):  
S. Ilias ◽  
P. Topart ◽  
C. Larouche ◽  
P. Beaupré ◽  
D. Gay ◽  
...  
Keyword(s):  
Infrared Detectors ◽  
Thermal Infrared

Orientation relationships and morphologies in the MBE growth of CrSi2 films on (III) Si surfaces

1988 ◽  
Vol 46 ◽  
pp. 986-987
Author(s):  
K.T. Chang ◽  
J.H. Mazur ◽  
R. Fathauer
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Infrared Detectors ◽  
Room Temperature ◽  
Lattice Mismatch ◽  
Orientation Relationships ◽  
Mbe Growth ◽  
Structure And Morphology ◽  
Transmission Electron ◽  
Deposited Films

Chromium disilicide is a semiconductor with a 0.3 eV bandgap. It has potential for applications in Si based infrared detectors. The CrSi2/Si system is a good candidate for epitaxy because of the low 0.1% lattice mismatch between the basal plane of CrSi2 and the (111) Si surface. Previous studies have reported that the growth of CrSi2 on (111) Si occurs as islands with orientation relationship. The work reported here is an extension of this previous study.In the present experiments, both (111) Si and 4°-off (111) Si were used as a substrates. After co-deposition of Cr and Si at room temperature in a MBE chamber, the deposited films was annealed in the same chamber at temperatures up to 720°C. Transmission electron microscopy diffraction and imaging were used to study the structure and morphology of the deposited films.

Sign in / Sign up

Export Citation Format

Share Document