scholarly journals Effects of Radiation Reaction Physics on High-Current Power Flow.

2021 ◽  
Author(s):  
Mark Hess ◽  
Evstati Evstatiev
Keyword(s):  
Power Flow ◽  
Radiation Reaction ◽  
High Current ◽  
Effects Of Radiation

scholarly journals Effects of radiation reaction in relativistic laser acceleration

2010 ◽  
Vol 82 (9) ◽  
Author(s):  
Y. Hadad ◽  
L. Labun ◽  
J. Rafelski ◽  
N. Elkina ◽  
C. Klier ◽  
...  
Keyword(s):  
Radiation Reaction ◽  
Laser Acceleration ◽  
Effects Of Radiation

Effects of radiation reaction on laser proton acceleration in the bubble regime

2018 ◽  
Vol 25 (9) ◽  
pp. 093101
Author(s):  
Yitong Wu ◽  
Liangliang Ji ◽  
Lingang Zhang ◽  
Zhao Guo ◽  
Bo Feng ◽  
...  
Keyword(s):  
Radiation Reaction ◽  
Proton Acceleration ◽  
Effects Of Radiation ◽  
Laser Proton Acceleration ◽  
Bubble Regime

scholarly journals Strategi Pengisian Baterai pada Sistem Panel Surya Standalone Berbasis Kontrol PI Multi-Loop

2021 ◽  
Vol 13 (1) ◽  
pp. 25-33
Author(s):  
Khusnul Hidayat ◽  
Mohammad Chasrun Hasani ◽  
Nur Alif Mardiyah ◽  
Machmud Effendy
Keyword(s):  
Control Strategy ◽  
Power Flow ◽  
Control Method ◽  
Life Time ◽  
Balance Of Power ◽  
High Current ◽  
Loop Control ◽  
Maximum Charge ◽  
Charging Current ◽  
Dc Bus

This study discusses the power control strategy in a standalone photovoltaic-battery hybrid system. The life-time of the battery will be shorter if the battery is often charged with high current and exceeds its State-of-Charge (SoC). Therefore, a control method is needed to control the power flow on the DC bus and the charging current as well as the SoC of the battery so that the battery has a long life-time. The proposed system uses two dc-dc converters to connect photovoltaic (PV) and lead-acid batteries to the load. The unidirectional DC-DC converter is used as the interface between the PV and the DC bus, the bidirectional DC-DC converter is used as the interface between the battery and the DC bus. The control strategy plays a role in controlling the power flow between the converter and the load to maintain the balance of power in the system and controlling the battery to support PV when the available PV power is not enough to meet the load. The multi-loop control strategy is proposed in this study, one of the loops is used to maintain the SoC of the battery in order to control the PV output power to avoid over-charging. Another loop is used to ensure the balance of the system's power when the battery is charging at its maximum charge current. The proposed control system is implemented without requiring any conditions for the control to operate. The simulation results show that the proposed multi-loop control can control the power flow in the system while maintaining the maximum charging current and battery SoC limits.

Effects of radiation reaction in the interaction between cluster media and high intensity lasers in the radiation dominant regime

2016 ◽  
Vol 23 (6) ◽  
pp. 063115 ◽  
Author(s):  
Natsumi Iwata ◽  
Hideo Nagatomo ◽  
Yuji Fukuda ◽  
Ryutaro Matsui ◽  
Yasuaki Kishimoto
Keyword(s):  
High Intensity ◽  
Radiation Reaction ◽  
Effects Of Radiation

Elastic Scattering in Electron Microscopy

1973 ◽  
Vol 31 ◽  
pp. 252-253
Author(s):  
J. Langmore ◽  
M. Isaacson ◽  
J. Wall ◽  
A. V. Crewe
Keyword(s):  
Electron Microscopy ◽  
Elastic Scattering ◽  
Cross Section ◽  
Quantum Noise ◽  
Dark Field ◽  
Elastic Cross Section ◽  
Biological Molecules ◽  
Dark Field Microscopy ◽  
Field Systems ◽  
Effects Of Radiation

High resolution dark field microscopy is becoming an important tool for the investigation of unstained and specifically stained biological molecules. Of primary consideration to the microscopist is the interpretation of image Intensities and the effects of radiation damage to the specimen. Ignoring inelastic scattering, the image intensity is directly related to the collected elastic scattering cross section, σɳ, which is the product of the total elastic cross section, σ and the eficiency of the microscope system at imaging these electrons, η. The number of potentially bond damaging events resulting from the beam exposure required to reduce the effect of quantum noise in the image to a given level is proportional to 1/η. We wish to compare η in three dark field systems.

Spatial resolution of X-ray microanalysis in thin foils

1978 ◽  
Vol 36 (1) ◽  
pp. 544-545
Author(s):  
R. Hutchings ◽  
I.P. Jones ◽  
M.H. Loretto ◽  
R.E. Smallman
Keyword(s):  
Spatial Resolution ◽  
Electron Probe ◽  
Beam Divergence ◽  
Inelastic Interaction ◽  
Specimen Thickness ◽  
High Current ◽  
Beam Spreading ◽  
X Ray ◽  
Thin Foils ◽  
Complex Calculation

There is increasing interest in X-ray microanalysis of thin specimens and the present paper attempts to define some of the factors which govern the spatial resolution of this type of microanalysis. One of these factors is the spreading of the electron probe as it is transmitted through the specimen. There will always be some beam-spreading with small electron probes, because of the inevitable beam divergence associated with small, high current probes; a lower limit to the spatial resolution is thus 2αst where 2αs is the beam divergence and t the specimen thickness.In addition there will of course be beam spreading caused by elastic and inelastic interaction between the electron beam and the specimen. The angle through which electrons are scattered by the various scattering processes can vary from zero to 180° and it is clearly a very complex calculation to determine the effective size of the beam as it propagates through the specimen.

Precipitation in silicon: Microanalysis

1988 ◽  
Vol 46 ◽  
pp. 474-475
Author(s):  
R.W. Carpenter
Keyword(s):  
Transition Metals ◽  
Spatial Resolution ◽  
Thin Foil ◽  
Precipitation Reaction ◽  
High Current ◽  
Reaction Products ◽  
Carbon And Nitrogen ◽  
Dielectric Layers ◽  
Precipitation Processes ◽  
Areas Of Interest

Interest in precipitation processes in silicon appears to be centered on transition metals (for intrinsic and extrinsic gettering), and oxygen and carbon in thermally aged materials, and on oxygen, carbon, and nitrogen in ion implanted materials to form buried dielectric layers. A steadily increasing number of applications of microanalysis to these problems are appearing. but still far less than the number of imaging/diffraction investigations. Microanalysis applications appear to be paced by instrumentation development. The precipitation reaction products are small and the presence of carbon is often an important consideration. Small high current probes are important and cryogenic specimen holders are required for consistent suppression of contamination buildup on specimen areas of interest. Focussed probes useful for microanalysis should be in the range of 0.1 to 1nA, and estimates of spatial resolution to be expected for thin foil specimens can be made from the curves shown in Fig. 1.

Electron crystallographic determination of the 3-D structure of staurolite at atomic resolution

1991 ◽  
Vol 49 ◽  
pp. 540-541
Author(s):  
Kenneth H. Downing ◽  
Hu Meisheng ◽  
Hans-Rudolf Went ◽  
Michael A. O'Keefe
Keyword(s):  
High Resolution ◽  
Three Dimensional ◽  
High Resolution Electron Microscopy ◽  
Atomic Resolution ◽  
Dimensional Structure ◽  
Structure Information ◽  
Resolution Electron ◽  
Scattering Effects ◽  
High Resolution Images ◽  
Effects Of Radiation

With current advances in electron microscope design, high resolution electron microscopy has become routine, and point resolutions of better than 2Å have been obtained in images of many inorganic crystals. Although this resolution is sufficient to resolve interatomic spacings, interpretation generally requires comparison of experimental images with calculations. Since the images are two-dimensional representations of projections of the full three-dimensional structure, information is invariably lost in the overlapping images of atoms at various heights. The technique of electron crystallography, in which information from several views of a crystal is combined, has been developed to obtain three-dimensional information on proteins. The resolution in images of proteins is severely limited by effects of radiation damage. In principle, atomic-resolution, 3D reconstructions should be obtainable from specimens that are resistant to damage. The most serious problem would appear to be in obtaining high-resolution images from areas that are thin enough that dynamical scattering effects can be ignored.

Electron microscope study of the effects of radiation on insect fertility

1990 ◽  
Vol 48 (3) ◽  
pp. 72-73
Author(s):  
Judy Ju-Hu Chiang ◽  
Robert Kuo-Cheng Chen
Keyword(s):  
Electron Microscopy ◽  
Germ Cell ◽  
Germ Cells ◽  
Electron Microscope Study ◽  
Radiation Treatment ◽  
Light And Electron Microscopy ◽  
Stem Borer ◽  
Metabolic Energy ◽  
Rice Stem Borer ◽  
Effects Of Radiation

Germ cells from the rice stem borer Chilo suppresalis, were examined by light and electron microscopy. Damages to organelles within the germ cells were observed. The mitochondria, which provide the cell with metabolic energy, were seen to disintegrate within the germ cell. Lysosomes within the germ cell were also seen to disintegrate. The subsequent release of hydrolytic enzymesmay be responsible for the destruction of organelles within the germ cell. Insect spermatozoa were seen to lose the ability to move because of radiation treatment. Damage to the centrioles, one of which is in contact with the tail, may be involved in causing sperm immobility.

Defect reduction in oxygen implanted silicon-on-insulator material during high-temperature annealing

1989 ◽  
Vol 47 ◽  
pp. 604-605
Author(s):  
P. Roitman ◽  
B. Cordts ◽  
S. Visitserngtrakul ◽  
S.J. Krause
Keyword(s):  
High Temperature ◽  
Annealing Temperature ◽  
Silicon On Insulator ◽  
High Dose ◽  
High Temperature Annealing ◽  
High Current ◽  
Defect Reduction ◽  
Annealing Step ◽  
Multiple Cycle ◽  
Defect Densities

Synthesis of a thin, buried dielectric layer to form a silicon-on-insulator (SOI) material by high dose oxygen implantation (SIMOX – Separation by IMplanted Oxygen) is becoming an important technology due to the advent of high current (200 mA) oxygen implanters. Recently, reductions in defect densities from 109 cm−2 down to 107 cm−2 or less have been reported. They were achieved with a final high temperature annealing step (1300°C – 1400°C) in conjunction with: a) high temperature implantation or; b) channeling implantation or; c) multiple cycle implantation. However, the processes and conditions for reduction and elimination of precipitates and defects during high temperature annealing are not well understood. In this work we have studied the effect of annealing temperature on defect and precipitate reduction for SIMOX samples which were processed first with high temperature, high current implantation followed by high temperature annealing.

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