scholarly journals Combined microscopy studies of complex electronic materials. Final report

2019 ◽  
Author(s):  
David Cobden
Keyword(s):  
Electronic Materials ◽  
Final Report ◽  
Combined Microscopy

Applications of SIMS to electronic materials and devices

1992 ◽  
Vol 50 (2) ◽  
pp. 1682-1683
Author(s):  
S.F. Corcoran
Keyword(s):  
Depth Distribution ◽  
Secondary Ion Mass Spectrometry ◽  
Semiconductor Device ◽  
Electronic Materials ◽  
Profile Analysis ◽  
Semiconductor Industry ◽  
Small Diameter ◽  
Depth Resolution ◽  
Detection Sensitivity

Over the past decade secondary ion mass spectrometry (SIMS) has played an increasingly important role in the characterization of electronic materials and devices. The ability of SIMS to provide part per million detection sensitivity for most elements while maintaining excellent depth resolution has made this technique indispensable in the semiconductor industry. Today SIMS is used extensively in the characterization of dopant profiles, thin film analysis, and trace analysis in bulk materials. The SIMS technique also lends itself to 2-D and 3-D imaging via either the use of stigmatic ion optics or small diameter primary beams.By far the most common application of SIMS is the determination of the depth distribution of dopants (B, As, P) intentionally introduced into semiconductor materials via ion implantation or epitaxial growth. Such measurements are critical since the dopant concentration and depth distribution can seriously affect the performance of a semiconductor device. In a typical depth profile analysis, keV ion sputtering is used to remove successive layers the sample.

Nursing and Environmental Health Roundtable: August 26-27, 2002, Research Triangle Park, North Carolina: Final Report

2002 ◽  
Author(s):  
Teresa Nastoff ◽  
◽  
Diane M. Drew ◽  
Pamela S. Wigington ◽  
Julie Wakefield ◽  
...  
Keyword(s):  
North Carolina ◽  
Environmental Health ◽  
Final Report ◽  
Research Triangle
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