scholarly journals Lab to Large Scale Transition for Non-Vacuum Thin Film CIGS Solar Cells: Phase I Annual Technical Report, 1 August 2002-31 July 2003

2004 ◽  
Author(s):  
V K Kapur ◽  
A Bansal ◽  
P Le ◽  
O Asensio ◽  
N Shigeoka
2018 ◽  
Vol 2018 ◽  
pp. 1-14 ◽  
Author(s):  
Kam Hoe Ong ◽  
Ramasamy Agileswari ◽  
Biancamaria Maniscalco ◽  
Panagiota Arnou ◽  
Chakrabarty Chandan Kumar ◽  
...  

Copper Indium Gallium Selenide- (CIGS-) based solar cells have become one of the most promising candidates among the thin film technologies for solar power generation. The current record efficiency of CIGS has reached 22.6% which is comparable to the crystalline silicon- (c-Si-) based solar cells. However, material properties and efficiency on small area devices are crucial aspects to be considered before manufacturing into large scale. The process for each layer of the CIGS solar cells, including the type of substrate used and deposition condition for the molybdenum back contact, will give a direct impact to the efficiency of the fabricated device. In this paper, brief introduction on the production, efficiency, etc. of a-Si, CdTe, and CIGS thin film solar cells and c-Si solar cells are first reviewed, followed by the recent progress of substrates. Different deposition techniques’ influence on the properties of molybdenum back contact for CIGS are discussed. Then, the formation and thickness influence factors of the interfacial MoSe2 layer are reviewed; its role in forming ohmic contact, possible detrimental effects, and characterization of the barrier layers are specified. Scale-up challenges/issues of CIGS module production are also presented to give an insight into commercializing CIGS solar cells.


2020 ◽  
Vol 4 (1) ◽  
pp. 362-368 ◽  
Author(s):  
SeongYeon Kim ◽  
Md. Salahuddin Mina ◽  
Kiwhan Kim ◽  
Jihye Gwak ◽  
JunHo Kim

As a Cd-free buffer, In2S3 buffer has been used in Cu(In,Ga)Se2 (CIGS) solar cells.


2006 ◽  
Vol 90 (18-19) ◽  
pp. 3416-3421 ◽  
Author(s):  
Y. Fujioka ◽  
A. Shimizu ◽  
H. Fukuda ◽  
T. Oouchida ◽  
S. Tachibana ◽  
...  

2018 ◽  
Vol 2018 ◽  
pp. 1-9 ◽  
Author(s):  
Grace Rajan ◽  
Krishna Aryal ◽  
Shankar Karki ◽  
Puruswottam Aryal ◽  
Robert W. Collins ◽  
...  

In view of the large-scale utilization of Cu(In,Ga)Se2 (CIGS) solar cells for photovoltaic application, it is of interest not only to enhance the conversion efficiency but also to reduce the thickness of the CIGS absorber layer in order to reduce the cost and improve the solar cell manufacturing throughput. In situ and real-time spectroscopic ellipsometry (RTSE) has been used conjointly with ex situ characterizations to understand the properties of ultrathin CIGS films. This enables monitoring the growth process, analyzing the optical properties of the CIGS films during deposition, and extracting composition, film thickness, grain size, and surface roughness which can be corroborated with ex situ measurements. The fabricated devices were characterized using current voltage and quantum efficiency measurements and modeled using a 1-dimensional solar cell device simulator. An analysis of the diode parameters indicates that the efficiency of the thinnest cells was restricted not only by limited light absorption, as expected, but also by a low fill factor and open-circuit voltage, explained by an increased series resistance, reverse saturation current, and diode quality factor, associated with an increased trap density.


Author(s):  
Hongliang Wang ◽  
Y. Lawrence Yao ◽  
Hongqiang Chen

Laser scribing is an important manufacturing process used to reduce photocurrent and resistance losses and increase solar cell efficiency through the formation of serial interconnections in large-area solar cells. High-quality scribing is crucial since the main impediment to large-scale adoption of solar power is its high-production cost (price-per-watt) compared to competing energy sources such as wind and fossil fuels. In recent years, the use of glass-side laser scribing processes has led to increased scribe quality and solar cell efficiencies; however, defects introduced during the process such as thermal effect, microcracks, film delamination, and removal uncleanliness keep the modules from reaching their theoretical efficiencies. Moreover, limited numerical work has been performed in predicting thin-film laser removal processes. In this study, a nanosecond (ns) laser with a wavelength at 532 nm is employed for pattern 2 (P2) scribing on CdTe (cadmium telluride) based thin-film solar cells. The film removal mechanism and defects caused by laser-induced micro-explosion process are studied. The relationship between those defects, removal geometry, laser fluences, and scribing speeds are also investigated. Thermal and mechanical numerical models are developed to analyze the laser-induced spatiotemporal temperature and pressure responsible for film removal. The simulation can well-predict the film removal geometries, transparent conducting oxide (TCO) layer thermal damage, generation of microcracks, film delamination, and residual materials. The characterization of removal qualities will enable the process optimization and design required to enhance solar module efficiency.


Author(s):  
Marty W. DeGroot ◽  
Mike Mills ◽  
Narayan Ramesh ◽  
Minoru Sakuma ◽  
Lindsey A. Clark ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document