scholarly journals High Throughput Manufacturing of Thin-Film CdTe Photovoltaic Materials; Final Subcontract Report, 16 November 1993-31 December 1998

10.2172/14427 ◽  
1999 ◽  
Author(s):  
D W Sandwisch
Keyword(s):  
Thin Film ◽  
High Throughput ◽  
Photovoltaic Materials

Combinatorial Fabrication and High-Throughput Characterization of Thin Film Metal Oxide Libraries for Solar water Splitting

2018 ◽  
Author(s):  
Alfred Ludwig ◽  
Mona Nowak ◽  
Swati Kumari ◽  
Helge S. Stein ◽  
Ramona Gutkowski ◽  
...  
Keyword(s):  
Thin Film ◽  
Metal Oxide ◽  
Water Splitting ◽  
High Throughput ◽  
Solar Water ◽  
Solar Water Splitting

High throughput screening of ferroelectric thin film libraries

2006 ◽  
Vol 100 (11) ◽  
pp. 114114 ◽  
Author(s):  
Christian Schroeter ◽  
Berit Wessler ◽  
Andreas Schoenecker ◽  
Uwe Keitel ◽  
Lukas M. Eng
Keyword(s):  
Thin Film ◽  
High Throughput ◽  
High Throughput Screening ◽  
Ferroelectric Thin Film

Development of a high-throughput thermoelectric screening tool for combinatorial thin film libraries

2007 ◽  
Vol 254 (3) ◽  
pp. 765-767 ◽  
Author(s):  
M. Otani ◽  
K. Itaka ◽  
W. Wong-Ng ◽  
P.K. Schenck ◽  
H. Koinuma
Keyword(s):  
Thin Film ◽  
High Throughput ◽  
Screening Tool

scholarly journals Photo-Sensitizing Thin-Film Ferroelectric Oxides Using Materials Databases and High-Throughput Calculations

2019 ◽  
Author(s):  
Jose J Plata ◽  
Javier Amaya Suárez ◽  
Santiago Cuesta-López ◽  
Antonio Marquez ◽  
Javier Fdez. Sanz
Keyword(s):  
Thin Film ◽  
High Throughput ◽  
Photovoltaic Effect ◽  
Electric Polarization ◽  
Ferroelectric Materials ◽  
Band Alignment ◽  
Band Gaps ◽  
Solar Cell Efficiency ◽  
Cell Efficiency ◽  
Ferroelectric Oxides

<div> <div> <div> <p>Conventional solar cell efficiency is usually limited by the Shockley-Queisser limit. This is not the case, however, for ferroelectric materials, which present a spontaneous electric polarization that is responsible for their bulk photovoltaic effect. Even so, most ferroelectric oxides exhibit large band gaps, reducing the amount of solar energy that can be harvested. In this work, a high-throughput approach to tune the electronic properties of thin-film ferroelectric oxides is presented. Materials databases were systematically used to find substrates for the epitaxial growth of KNbO3 thin-films, using topological and stability filters. Interface models were built and their electronic and optical properties were predicted. Strain and substrate-thin-film band interaction effects were examined in detail, in order to understand the interaction between both materials. We found substrates that significantly reduce the KNbO3 band gap, maintain KNbO3 polarization, and potentially present the right band alignment, favoring the electron injection in the substrate/electrode. This methodology can be easily applied to other ferroelectric oxides, optimizing their band gaps and accelerating the development of new ferroelectric-based solar cells. </p> </div> </div> </div>

High-Throughput Investigation of the Oxidation and Phase Constitution of Thin-Film Ni-Al-Cr Materials Libraries

2015 ◽  
Vol 17 (9) ◽  
pp. 1365-1373 ◽  
Author(s):  
Dennis König ◽  
Christina Eberling ◽  
Michael Kieschnick ◽  
Sannakaisa Virtanen ◽  
Alfred Ludwig
Keyword(s):  
Thin Film ◽  
High Throughput ◽  
Phase Constitution
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