scholarly journals Silicon Carbide Film Growth Final Report CRADA No. TC-1060-94

2018 ◽  
Author(s):  
J. Amano ◽  
A. V. Hamza
Keyword(s):  
Silicon Carbide ◽  
Film Growth ◽  
Final Report ◽  
Silicon Carbide Film

Initial stages of the epitaxial silicon carbide film growth on silicon substrates

1989 ◽  
Vol 116 (2) ◽  
pp. K169-K172
Author(s):  
L. I. Berezhinskii ◽  
S. I. Vlaskina ◽  
V. E. Rodionov ◽  
H. A. Shamuratov
Keyword(s):  
Silicon Carbide ◽  
Film Growth ◽  
Silicon Substrates ◽  
Epitaxial Silicon ◽  
Silicon Carbide Film

scholarly journals Silicon Carbide Film Growth Using Dual Isotopical 28Si− and 12C+ Ion Species

2000 ◽  
Vol 41 (1) ◽  
pp. 34-36 ◽  
Author(s):  
Nobuteru Tsubouchi ◽  
Akiyoshi Chayahara ◽  
Atsushi Kinomura ◽  
Claire Heck ◽  
Yuji Horino
Keyword(s):  
Silicon Carbide ◽  
Film Growth ◽  
Silicon Carbide Film ◽  
Ion Species

Quick and Practical Cleaning Process for Silicon Carbide Epitaxial Reactor

2018 ◽  
Vol 924 ◽  
pp. 96-99
Author(s):  
Kohei Shioda ◽  
Keisuke Kurashima ◽  
Hitoshi Habuka ◽  
Hideki Ito ◽  
Shinichi Mitani ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Carbon Film ◽  
Film Surface ◽  
Chemical Vapor ◽  
Pyrolytic Carbon ◽  
Film Deposition ◽  
Carbon Surface ◽  
Cleaning Process ◽  
Silicon Carbide Film ◽  
Carbon Coated

In order to develop a quick and practical cleaning process for the silicon carbide chemical vapor deposition reactor, the pyrolytic carbon-coated susceptor was used. The 30-μm-thick silicon carbide film was formed on the susceptor; the film was cleaning by chlorine trifluoride gas at 460 °C for 15 min. The remained fluorine was removed by the annealing at 900 °C in ambient hydrogen. The pyrolytic carbon surface did not suffer from any damage, because the pyrolytic carbon film surface morphology after the cleaning process was the same as that before the silicon carbide film deposition.

Comparative Analysis of Defect Formation in Silicon Carbide under Electron and Proton Irradiation

2013 ◽  
Vol 740-742 ◽  
pp. 369-372
Author(s):  
Alexander M. Ivanov ◽  
Alexander A. Lebedev ◽  
V.V. Kozlovski
Keyword(s):  
Silicon Carbide ◽  
Proton Irradiation ◽  
Defect Formation ◽  
Radiation Defects ◽  
Proton Scattering ◽  
Silicon Carbide Film ◽  
Low Energies ◽  
Simulated Distribution ◽  
Recoil Atoms ◽  
Mev Protons

The irradiation with 0.9 MeV electrons and with 8 MeV and 15 MeV protons were performed for studying radiation defects. Proton scattering in a silicon carbide film has been numerically simulated. Distribution histograms of the energy imparted to recoil atoms are obtained. Two energy ranges are considered when analyzing the histograms. In the first range of “low” energies, individual Frenkel pairs with closely spaced components are created. In the second range, recoil atoms have energies sufficient for generating a cascade of displacements. This gives rise to microscopic regions with high density of vacancies and vacancy complexes of various kinds.

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