scholarly journals Stress Mapping in Glass-to-Metal Seals using Indentation Crack Lengths.

2017 ◽  
Author(s):  
Kevin Strong ◽  
Thomas E. Buchheit ◽  
Thomas Wayne Diebold ◽  
Clay S. Newton ◽  
Denise N. Bencoe ◽  
...  
Keyword(s):  
Indentation Crack ◽  
Stress Mapping

scholarly journals Stress Mapping in Glass-to-Metal Seals using Indentation Crack Lengths

2017 ◽  
Author(s):  
Thomas E. Buchheit ◽  
Kevin Strong ◽  
Clay S. Newton ◽  
Thomas Wayne Diebold ◽  
Denise N. Bencoe ◽  
...  
Keyword(s):  
Indentation Crack ◽  
Stress Mapping

scholarly journals Strain and stress mapping by mechanochemical activation of spiropyran in poly(methyl methacrylate)

Strain ◽  
2019 ◽  
Vol 55 (3) ◽  
pp. e12310 ◽  
Author(s):  
Asha‐Dee N. Celestine ◽  
Nancy R. Sottos ◽  
Scott R. White
Keyword(s):  
Methyl Methacrylate ◽  
Mechanochemical Activation ◽  
Poly Methyl Methacrylate ◽  
Stress Mapping

Vickers indentation crack analysis of solid-phase-sintered silicon carbide ceramics

2013 ◽  
Vol 39 (1) ◽  
pp. 841-845 ◽  
Author(s):  
Xiao Yang ◽  
Xuejian Liu ◽  
Zhengren Huang ◽  
Xiuming Yao ◽  
Guiling Liu
Keyword(s):  
Silicon Carbide ◽  
Solid Phase ◽  
Vickers Indentation ◽  
Crack Analysis ◽  
Indentation Crack ◽  
Carbide Ceramics ◽  
Silicon Carbide Ceramics ◽  
Sintered Silicon

Quantitative Infrared Photoelasticity of Silicon Photovoltaic Wafers Using a Discrete Dislocation Model

2015 ◽  
Vol 82 (1) ◽  
Author(s):  
T.-W. Lin ◽  
G. P. Horn ◽  
H. T. Johnson
Keyword(s):  
Residual Stress ◽  
Numerical Modeling ◽  
Strain Energy ◽  
Dislocation Model ◽  
Slip Systems ◽  
Inspection Method ◽  
Crystalline Defects ◽  
Discrete Dislocation ◽  
Stress Mapping ◽  
And Performance

Residual stress and crystalline defects in silicon wafers can affect solar cell reliability and performance. Infrared photoelastic measurements are performed for stress mapping in monocrystalline silicon photovoltaic (PV) wafers and compared to photoluminescence (PL) measurements. The wafer stresses are then quantified using a discrete dislocation-based numerical modeling approach, which leads to simulated photoelastic images. The model accounts for wafer stress relaxation due to dislocation structures. The wafer strain energy is then analyzed with respect to the orientation of the dislocation structures. The simulation shows that particular locations on the wafer have only limited slip systems that reduce the wafer strain energy. Experimentally observed dislocation structures are consistent with these observations from the analysis, forming the basis for a more quantitative infrared photoelasticity-based inspection method.

Indentation Crack Initiation and Ductile to Brittle Transition Behavior of Fused Silica

2013 ◽  
Vol 797 ◽  
pp. 667-672 ◽  
Author(s):  
Peng Yao ◽  
Wei Wang ◽  
Chuan Zhen Huang ◽  
Jun Wang ◽  
Hong Tao Zhu ◽  
...  
Keyword(s):  
Penetration Depth ◽  
High Efficiency ◽  
Fused Silica ◽  
Load Range ◽  
Brittle Transition ◽  
Ductile Mode ◽  
Indentation Crack ◽  
Ultra Precision ◽  
Ductile To Brittle Transition ◽  
Brittle Mode

To provide a fundamental knowledge for the high efficiency grinding and ultra-precision grinding of fused silica, ductile mode and brittle mode material removal mechanisms were investigated by conducting micro/nanoindentation experiments in the range of 4.9 mN - 1960 mN. Before observing cracks and determining the ductile to brittle transition penetration depth, the samples were etched with hydrofluoric acid to expose cracks. The typical damage morphology of fused silica was discussed by observing the surface and cross-section of indentations, and the depth of SSD was found to be determined by the cone cracks or borderline cracks in the different load range. The ductile to brittle transition penetration depth of fused silica under Vickers indentation was 180 nm.

Hyperspectral Imaging and Stress Mapping in Agriculture

1998 ◽  
Vol 66 (2) ◽  
pp. 179-191 ◽  
Author(s):  
Camille C.D Lelong ◽  
Patrick C Pinet ◽  
Hervé Poilvé
Keyword(s):  
Hyperspectral Imaging ◽  
Stress Mapping
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