scholarly journals Spectroscopy of Charge Carriers and Traps in Field-Doped Single Crystal Organic Semiconductors

2017 ◽  
Author(s):  
Xiaoyang Zhu ◽  
Daniel Frisbie
Keyword(s):  
Single Crystal ◽  
Organic Semiconductors ◽  
Charge Carriers

Magnetic Quantum Oscillations from Surface States of Bi Nanowires

2011 ◽  
Vol 1350 ◽  
Author(s):  
L. A. Konopko ◽  
T. E. Huber ◽  
A. A. Nikolaeva
Keyword(s):  
Single Crystal ◽  
Low Temperatures ◽  
Surface States ◽  
Charge Carriers ◽  
Quantum Oscillations ◽  
Wide Range ◽  
Spin Orbit Interactions ◽  
Conducting Tube ◽  
Magnetic Quantum Oscillations ◽  
Strong Spin

ABSTRACTIn this work, we report the results of studies of the transverse magnetoresistance (MR) of single-crystal Bi nanowires with diameter d<80 nm. The single-crystal nanowire samples were prepared by the Taylor-Ulitovsky technique. Due to the semimetal-to-semiconductor transformation and high density of surface states with strong spin-orbit interactions, the charge carriers are confined to the conducting tube made of surface states. The non monotonic changes of transverse MR that are equidistant in a direct magnetic field were observed at low temperatures in a wide range of magnetic fields up to 14 T. The period of oscillations depends on the wire diameter d as for the case of longitudinal MR. An interpretation of transverse MR oscillations is presented.

Growth of Single-Crystal Organic Semiconductors

2010 ◽  
pp. 845-867 ◽  
Author(s):  
Christian Kloc ◽  
Theo Siegrist ◽  
Jens Pflaum
Keyword(s):  
Single Crystal ◽  
Organic Semiconductors

scholarly journals Regioisomeric control of layered crystallinity in solution-processable organic semiconductors

2020 ◽  
Vol 11 (46) ◽  
pp. 12493-12505
Author(s):  
Satoru Inoue ◽  
Toshiki Higashino ◽  
Shunto Arai ◽  
Reiji Kumai ◽  
Hiroyuki Matsui ◽  
...  
Keyword(s):  
Single Crystal ◽  
Organic Semiconductors ◽  
High Performance ◽  
Crystal Packing ◽  
Positional Isomers ◽  
Solution Processable

An isomorphous bilayer-type layered herringbone crystal packing is reported for a series of four positional isomers of mono-C8-BTNTs, where the single-crystal devices with the isomers exhibit high-performance TFT characteristics.

scholarly journals High-performance, semiconducting membrane composed of ultrathin, single-crystal organic semiconductors

2019 ◽  
Vol 117 (1) ◽  
pp. 80-85 ◽  
Author(s):  
Tatsuyuki Makita ◽  
Shohei Kumagai ◽  
Akihito Kumamoto ◽  
Masato Mitani ◽  
Junto Tsurumi ◽  
...  
Keyword(s):  
Single Crystal ◽  
Organic Semiconductors ◽  
High Performance ◽  
Printed Electronics ◽  
Electronic Device ◽  
Molecular Layer ◽  
High Mobility ◽  
Building Blocks ◽  
Solution Processed ◽  
Transfer Method

Thin film transistors (TFTs) are indispensable building blocks in any electronic device and play vital roles in switching, processing, and transmitting electronic information. TFT fabrication processes inherently require the sequential deposition of metal, semiconductor, and dielectric layers and so on, which makes it difficult to achieve reliable production of highly integrated devices. The integration issues are more apparent in organic TFTs (OTFTs), particularly for solution-processed organic semiconductors due to limits on which underlayers are compatible with the printing technologies. We demonstrate a ground-breaking methodology to integrate an active, semiconducting layer of OTFTs. In this method, a solution-processed, semiconducting membrane composed of few-molecular-layer–thick single-crystal organic semiconductors is exfoliated by water as a self-standing ultrathin membrane on the water surface and then transferred directly to any given underlayer. The ultrathin, semiconducting membrane preserves its original single crystallinity, resulting in excellent electronic properties with a high mobility up to 12cm2⋅V−1⋅s−1. The ability to achieve transfer of wafer-scale single crystals with almost no deterioration of electrical properties means the present method is scalable. The demonstrations in this study show that the present transfer method can revolutionize printed electronics and constitute a key step forward in TFT fabrication processes.

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