scholarly journals Device Model for Light-Emitting Field-Effect Transistors with Organic Semiconductor Channel

2007 ◽  
Author(s):  
P. P. Ruden ◽  
Darryl L. Smith
Keyword(s):  
Organic Semiconductor ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Light Emitting ◽  
Device Model

scholarly journals Device Model for Light-Emitting Field-Effect Transistors with Organic Semiconductor Channel

2007 ◽  
Vol 1003 ◽  
Author(s):  
P. Paul Ruden ◽  
Darryl L. Smith
Keyword(s):  
Field Effect ◽  
Light Emission ◽  
Field Effect Transistors ◽  
Localized States ◽  
Recent Experimental Data ◽  
Organic Field Effect Transistors ◽  
Light Emitting ◽  
Device Model ◽  
Channel Region ◽  
Good Agreement

AbstractWe present a device model for light-emitting, ambipolar, organic field-effect transistors based on the gradual channel approximation. The model results are in very good agreement with recent experimental data. Trapping of injected carriers in localized states in the channel region is shown to be an important mechanism that can strongly affect the transfer characteristics and the light emission of these devices.

scholarly journals Mercury-Mediated Organic Semiconductor Surface Doping Monitored by Electrolyte-Gated Field-Effect Transistors

2017 ◽  
Vol 27 (46) ◽  
pp. 1703899 ◽  
Author(s):  
Qiaoming Zhang ◽  
Francesca Leonardi ◽  
Stefano Casalini ◽  
Marta Mas-Torrent
Keyword(s):  
Organic Semiconductor ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Semiconductor Surface ◽  
Surface Doping

scholarly journals Large Area Emission in p-Type Polymer-Based Light-Emitting Field-Effect Transistors by Incorporating Charge Injection Interlayers

Materials ◽  
2021 ◽  
Vol 14 (4) ◽  
pp. 901
Author(s):  
Gizem Acar ◽  
Muhammad Javaid Iqbal ◽  
Mujeeb Ullah Chaudhry
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Charge Injection ◽  
Limiting Factors ◽  
Hole Injection ◽  
Large Area ◽  
Device Structure ◽  
Light Emitting ◽  
Emission Area ◽  
P Type

Organic light-emitting field-effect transistors (LEFETs) provide the possibility of simplifying the display pixilation design as they integrate the drive-transistor and the light emission in a single architecture. However, in p-type LEFETs, simultaneously achieving higher external quantum efficiency (EQE) at higher brightness, larger and stable emission area, and high switching speed are the limiting factors for to realise their applications. Herein, we present a p-type polymer heterostructure-based LEFET architecture with electron and hole injection interlayers to improve the charge injection into the light-emitting layer, which leads to better recombination. This device structure provides access to hole mobility of ~2.1 cm2 V−1 s−1 and EQE of 1.6% at a luminance of 2600 cd m−2. Most importantly, we observed a large area emission under the entire drain electrode, which was spatially stable (emission area is not dependent on the gate voltage and current density). These results show an important advancement in polymer-based LEFET technology toward realizing new digital display applications.

scholarly journals Oligofuran–Benzothiadiazole Co-oligomers: Synthesis, Optoelectronic Properties and Reactivity

2021 ◽  
Vol 03 (02) ◽  
pp. 303-308
Author(s):  
Dror Ben Abba Amiel ◽  
Choongik Kim ◽  
Ori Gidron
Keyword(s):  
Organic Solar Cells ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Organic Light Emitting Diodes ◽  
Organic Field Effect Transistors ◽  
Active Materials ◽  
Light Emitting ◽  
Organic Light ◽  
Donor Acceptor ◽  
Optical Bandgaps

Donor–acceptor–donor (DAD) triad systems are commonly applied as active materials in ambipolar organic field-effect transistors, organic solar cells, and NIR-emitting organic light-emitting diodes. Often, these triads utilize oligothiophenes as donors, whereas their oxygen-containing analogs, oligofurans, are far less studied in this setup. Here we introduce a family of DAD triads in which the donors are oligofurans and the acceptor is benzothiadiazole. In a combined computational and experimental study, we show that these triads display optical bandgaps similar to those of their thiophene analogs, and that a bifuran donor is sufficient to produce emission in the NIR spectral region. The presence of a central acceptor unit increases the photostability of oligofuran-based DAD systems compared with parent oligofurans of the similar length.

Sign in / Sign up

Export Citation Format

Share Document