scholarly journals Geophysical and transport properties of reservoir rocks. Summary annual report

1990 ◽  
Author(s):  
N.G.W. Cook
Keyword(s):  
Transport Properties ◽  
Annual Report ◽  
Reservoir Rocks

Integrating seismic attributes to estimate transport properties of dual porosity reservoir rocks

First Break ◽  
2009 ◽  
Vol 27 (1299) ◽  
Author(s):  
E. Kozlov ◽  
N. Baransky ◽  
V. Motruk ◽  
A. Rusalin ◽  
L. Persidskaya ◽  
...  
Keyword(s):  
Transport Properties ◽  
Seismic Attributes ◽  
Dual Porosity ◽  
Reservoir Rocks

Regional analysis techniques for integrating experimental and numerical measurements of transport properties of reservoir rocks

2017 ◽  
Vol 100 ◽  
pp. 48-61 ◽  
Author(s):  
S.M. Alizadeh ◽  
S. Latham ◽  
J. Middleton ◽  
A. Limaye ◽  
T.J. Senden ◽  
...  
Keyword(s):  
Transport Properties ◽  
Regional Analysis ◽  
Reservoir Rocks ◽  
Analysis Techniques

Spectroscopic Diagnostics of Tokamaks

1988 ◽  
Vol 102 ◽  
pp. 165-174
Author(s):  
C. de Michelis
Keyword(s):  
Transport Properties ◽  
Power Losses ◽  
Spectroscopic Diagnostics ◽  
Important Concern

AbstractImpurities being an important concern in tokamaks, spectroscopy plays a key role in their understanding. Techniques for the evaluation of concentrations, power losses and transport properties are surveyed, and a few developments are outlined.

Structure and Orientation of As Precipitates in LT-MBE Grown GaAs

1991 ◽  
Vol 49 ◽  
pp. 900-901 ◽  
Author(s):  
Alain Claverie ◽  
Zuzanna Liliental-Weber
Keyword(s):  
Transport Properties ◽  
Layer Thickness ◽  
Growth Temperature ◽  
Low Temperatures ◽  
Lattice Parameter ◽  
Crystalline Quality ◽  
Insulating Properties ◽  
Lt Gaas

GaAs layers grown by MBE at low temperatures (in the 200°C range, LT-GaAs) have been reported to have very interesting electronic and transport properties. Previous studies have shown that, before annealing, the crystalline quality of the layers is related to the growth temperature. Lowering the temperature or increasing the layer thickness generally results in some columnar polycrystalline growth. For the best “temperature-thickness” combinations, the layers may be very As rich (up to 1.25%) resulting in an up to 0.15% increase of the lattice parameter, consistent with the excess As. Only after annealing are the technologically important semi-insulating properties of these layers observed. When annealed in As atmosphere at about 600°C a decrease of the lattice parameter to the substrate value is observed. TEM studies show formation of precipitates which are supposed to be As related since the average As concentration remains almost unchanged upon annealing.

1999 Annual Report

2000 ◽  
Vol 10 (1) ◽  
pp. 6-6
Author(s):  
Eugene B. Cooper
Keyword(s):  
Annual Report
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