scholarly journals Polycrystalline Thin-Film Research: Copper Indium Gallium Diselenide (Fact Sheet)

2011 ◽  
Author(s):  
Keyword(s):  
Thin Film ◽  
Polycrystalline Thin Film ◽  
Copper Indium Gallium Diselenide ◽  
Film Research ◽  
Fact Sheet ◽  
Copper Indium ◽  
Indium Gallium ◽  
Copper Indium Gallium

Ionizing radiation effects in copper indium gallium diselenide thin-film solar cells

2002 ◽  
Vol 91 (1) ◽  
pp. 516 ◽  
Author(s):  
J. Tringe ◽  
J. Nocerino ◽  
R. Tallon ◽  
W. Kemp ◽  
W. Shafarman ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Ionizing Radiation ◽  
Radiation Effects ◽  
Thin Film Solar Cells ◽  
Copper Indium Gallium Diselenide ◽  
Copper Indium ◽  
Indium Gallium ◽  
Copper Indium Gallium

High Efficiency Copper Indium Gallium DiSelenide (CIGS) by High Power Impulse Magnetron Sputtering (HIPIMS): A Promising and Scalable Application in Thin-film Photovoltaics

2009 ◽  
Vol 1210 ◽  
Author(s):  
Ankush Halbe ◽  
Paul Johnson ◽  
Shen Jackson ◽  
Robert Weiss ◽  
Upendra Avachat ◽  
...  
Keyword(s):  
Thin Film ◽  
Magnetron Sputtering ◽  
High Power ◽  
Langmuir Probe ◽  
Ion Currents ◽  
Dc Magnetron Sputtering ◽  
Copper Indium Gallium Diselenide ◽  
Copper Indium ◽  
Indium Gallium ◽  
Copper Indium Gallium

AbstractA novel method to deposit Copper Indium Gallium Diselenide (CIGS) using High Power Impulse Magnetron Sputtering (HIPIMS) was demonstrated and compared to the existing DC magnetron sputtering process. The metal-ion assisted thin-film growth inherent to a HIPIMS deposition process was used to advantage in depositing CIGS films. The HIPIMS plasma was characterized by measuring ion currents on a Langmuir probe placed into the plasma sufficiently close to the substrate. The high density plasma consisting of both metal and metal ions resulted in CIGS thin-film solar cells of superior conversion efficiencies (˜13%) as compared to conventional DC magnetron sputtering (˜10%). The efficiency enhancement was attributed to the improvement in the shunt resistance of the solar cell which corresponds to the increase in the density of the CIGS layer. Furthermore, it was also possible to grow large grained CIGS (˜1 micron) with high mobility metal-ions from the HIPIMS process. The scalability potential of the HIPIMS CIGS process was also demonstrated by running a 1.5 m long Copper-Indium-Gallium rotatable in a selenium environment using a HIPIMS power supply. The cylindrical magnetron was run at an average power of 7.8 KW and peak powers of as much as 300 KW with controlled arcing. The existence of a HIPIMS plasma was confirmed by the ion currents on the Langmuir probe and the metal signals from a Plasma Emission Monitor (PEM).

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