scholarly journals Engineering scale development of the Vapor-Liquid-Solid (VLS) process for the production of silicon carbide fibrils

1993 ◽  
Author(s):  
W.E. Jr. Hollar ◽  
W.H. Mills
Keyword(s):  
Silicon Carbide ◽  
Scale Development ◽  
Vapor Liquid Solid ◽  
Vapor Liquid

Vapor-liquid-solid and melt growth of silicon carbide

1967 ◽  
Vol 1 (5) ◽  
pp. 255-262 ◽  
Author(s):  
C.E. Ryan ◽  
I. Berman ◽  
R.C. Marshall ◽  
D.P. Considine ◽  
J.J. Hawley
Keyword(s):  
Silicon Carbide ◽  
Vapor Liquid Solid ◽  
Melt Growth ◽  
Vapor Liquid

VLS Growth of Si nanowhiskers on a H-terminated Si{111} surface

1998 ◽  
Vol 536 ◽  
Author(s):  
N. Ozaki ◽  
Y. Ohno ◽  
S. Takeda ◽  
M. Hirata
Keyword(s):  
High Pressure ◽  
Growth Condition ◽  
Growth Mechanism ◽  
Quantum Confinement ◽  
Critical Value ◽  
Extended Defects ◽  
Vapor Liquid Solid ◽  
Minimum Diameter ◽  
Vls Growth ◽  
Vapor Liquid

AbstractWe have grown Si nanowhiskers on a Si{1111} surface via the vapor-liquid-solid (VLS) mechanism. The minimum diameter of the crystalline is 3nm and is close to the critical value for the effect of quantum confinement. We have found that many whiskers grow epitaxially or non-epitaxially on the substrate along the 〈112〉 direction as well as the 〈111〉 direction.In our growth procedure, we first deposited gold on a H-terminated Si{111} surface and prepared the molten catalysts of Au and Si at 500°C. Under the flow of high pressure silane gas, we have succeeded in producing the nanowhiskers without any extended defects. We present the details of the growth condition and discuss the growth mechanism of the nanowhiskers extending along the 〈112〉 direction.

About Nucleation on the Line of a Three-Phase Contact of a Vapor–Liquid–Solid During the Growth of Nanowires

2020 ◽  
Vol 55 (1) ◽  
pp. 32-37
Author(s):  
A. Yu. Vorob’ev ◽  
V. A. Nebol’sin ◽  
N. Swaikat ◽  
V. A. Yuriev
Keyword(s):  
Phase Contact ◽  
Vapor Liquid Solid ◽  
Three Phase ◽  
Vapor Liquid
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