Negative Temperature-Dependence of Stress-Induced R→B19′ Transformation in Nanocrystalline NiTi Alloy

2021 ◽  
Author(s):  
Taotao Wang ◽  
Xiangxiang Rao ◽  
Daqiang Jiang ◽  
Yang Ren ◽  
Lishan Cui ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Niti Alloy ◽  
Negative Temperature

scholarly journals Computational study on the mechanism and kinetics for the reaction between HO2 and n-propyl peroxy radical

RSC Advances ◽  
2019 ◽  
Vol 9 (69) ◽  
pp. 40437-40444
Author(s):  
Zhenli Yang ◽  
Xiaoxiao Lin ◽  
Jiacheng Zhou ◽  
Mingfeng Hu ◽  
Yanbo Gai ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Temperature Regime ◽  
Computational Study ◽  
Peroxy Radical ◽  
Negative Temperature ◽  
Mechanism And Kinetics ◽  
Lower Temperature

The negative temperature dependence for the HO2 + n-C3H7O2 reaction in lower temperature regime.

scholarly journals Thermal Lens Compensation of Rod Laser System Inserting a Solid Element with Negative Temperature-Dependence Change of Refractive Index Property

2008 ◽  
Vol 36 (9) ◽  
pp. 573-578
Author(s):  
Hidetsugu YOSHIDA ◽  
Norihiro TAKEUCHI ◽  
Hajime OKADA ◽  
Hisanori FUJITA ◽  
Masahiro NAKATSUKA
Keyword(s):  
Refractive Index ◽  
Temperature Dependence ◽  
Thermal Lens ◽  
Laser System ◽  
Negative Temperature ◽  
Solid Element

Characterization of carbon aerogels by transport measurements

1993 ◽  
Vol 8 (8) ◽  
pp. 1875-1885 ◽  
Author(s):  
A.W.P. Fung ◽  
Z.H. Wang ◽  
K. Lu ◽  
M.S. Dresselhaus ◽  
R.W. Pekala
Keyword(s):  
Raman Scattering ◽  
Temperature Dependence ◽  
Nearest Neighbor ◽  
Negative Temperature ◽  
Carbon Aerogels ◽  
Free Carriers ◽  
Carbon Particles ◽  
Microcellular Foams ◽  
Temperature Coefficient Of Resistivity

Carbon aerogels are a special class of low-density microcellular foams. These materials are composed of interconnected carbon particles with diameters of approximately 10 nm. The temperature dependence of the dc electrical resistivity and magnetic susceptibility (χ) from 4 K to room temperature, magnetoresistance (MR) in a magnetic field up to 15 T, and Raman scattering were measured as a function of aerogel density. While Raman scattering measurements are not sensitive to variations in density, the χ data show that there are more free carriers in samples of higher density. Aerogel samples with different densities all show a negative temperature coefficient of resistivity and a positive MR. The less dense samples exhibit a stronger temperature dependence of resistivity and a stronger field dependence of the MR, indicating that with decreasing density and increasing porosity, charge carriers are more localized. Data analysis precludes variable-range hopping in favor of nearest-neighbor hopping and fluctuation-induced tunneling as the most likely conduction mechanisms for carbon aerogels.

Temperature Dependence of Impact Ionization Coefficients in 4H-SiC

2014 ◽  
Vol 778-780 ◽  
pp. 461-466 ◽  
Author(s):  
Hiroki Niwa ◽  
Jun Suda ◽  
Tsunenobu Kimoto
Keyword(s):  
Temperature Dependence ◽  
Temperature Coefficient ◽  
Breakdown Voltage ◽  
Elevated Temperatures ◽  
Phonon Scattering ◽  
Impact Ionization ◽  
Negative Temperature ◽  
Positive Temperature Coefficient ◽  
Positive Temperature ◽  
Ionization Coefficients

Impact ionization coefficients of 4H-SiC were measured at room temperature and at elevated temperatures up to 200°C. Photomultiplication measurement was done in two complementary photodiodes to measure the multiplication factors of holes (Mp) and electrons (Mn), and ionization coefficients were extracted. Calculated breakdown voltage using the obtained ionization coefficients showed good agreement with the measured values in this study, and also in other reported PiN diodes and MOSFETs. In high-temperature measurement, breakdown voltage exhibited a positive temperature coefficient and multiplication factors showed a negative temperature coefficient. Therefore, extracted ionization coefficient has decreased which can be explained by the increase of phonon scattering. The calculated temperature dependence of breakdown voltage agreed well with the measured values not only for the diodes in this study, but also in PiN diode in other literature.

Sign in / Sign up

Export Citation Format

Share Document