Nanoparticle Formation by Spinodal Decomposition in Ion Implanted Samples

2021 ◽  
Author(s):  
Gabriella Jáger ◽  
János J. Tomán ◽  
Zoltán Erdélyi
Keyword(s):  
Spinodal Decomposition ◽  
Nanoparticle Formation ◽  
Ion Implanted

HRTEM and XPS study of nanoparticle formation in Zn+ ion implanted Si

2014 ◽  
Author(s):  
Vladimir V. Privezentsev ◽  
Natalya Yu. Tabachkova ◽  
Yurii Yu. Lebedinskii
Keyword(s):  
Nanoparticle Formation ◽  
Xps Study ◽  
Ion Implanted

XAFS Investigation of Nanoparticle Formation in 64Zn+ Ion Implanted and Thermo Oxidized Quartz

2019 ◽  
Vol 53 (16) ◽  
pp. 2115-2117 ◽  
Author(s):  
E. V. Khramov ◽  
V. V. Privezentsev ◽  
A. N. Palagushkin
Keyword(s):  
Nanoparticle Formation ◽  
Ion Implanted

ZnO nanoparticle formation in Zn+ion implanted SiO2/Si structure

2012 ◽  
Vol 10 (1) ◽  
pp. 48-51 ◽  
Author(s):  
Vladimir Privezentsev ◽  
Vaclav Kulikauskas ◽  
Anatoly Bazhenov ◽  
Eduard Steinman
Keyword(s):  
Zno Nanoparticle ◽  
Nanoparticle Formation ◽  
Ion Implanted

XAFS Investigation of Nanoparticle Formation in 64Zn+ Ion Implanted and Thermo Oxidized Si

2018 ◽  
Vol 52 (16) ◽  
pp. 2070-2072 ◽  
Author(s):  
E. V. Khramov ◽  
V. V. Privezentsev
Keyword(s):  
Nanoparticle Formation ◽  
Ion Implanted

Changes of structure and composition of a zinc ion-implanted silicon surface during nanoparticle formation upon thermal treatment

2013 ◽  
Vol 77 (8) ◽  
pp. 963-968 ◽  
Author(s):  
V. V. Privezentsev ◽  
N. Yu. Tabachkova ◽  
V. S. Kulikauskas ◽  
D. V. Petrov ◽  
Yu. Yu. Lebedinskii
Keyword(s):  
Thermal Treatment ◽  
Silicon Surface ◽  
Zinc Ion ◽  
Nanoparticle Formation ◽  
Ion Implanted

Enhanced nanoparticle formation by indentation and annealing on 2MeV Cu ion-implanted SiO2

Vacuum ◽  
2008 ◽  
Vol 83 (3) ◽  
pp. 641-644 ◽  
Author(s):  
Jin Pan ◽  
H. Wang ◽  
Y. Takeda ◽  
N. Umeda ◽  
K. Kono ◽  
...  
Keyword(s):  
Nanoparticle Formation ◽  
Ion Implanted

Electron Diffraction Analysis of Microtwin Structures in Regrown (III) Silicon

1982 ◽  
Vol 40 ◽  
pp. 460-461
Author(s):  
P. Ling ◽  
R. Gronsky ◽  
J. Washburn
Keyword(s):  
Electron Diffraction ◽  
Ion Implantation ◽  
Diffraction Analysis ◽  
Diffraction Pattern ◽  
Direct Consequence ◽  
The Other ◽  
Electron Diffraction Analysis ◽  
Defect Microstructures ◽  
Ion Implanted

The defect microstructures of Si arising from ion implantation and subsequent regrowth for a (111) substrate have been found to be dominated by microtwins. Figure 1(a) is a typical diffraction pattern of annealed ion-implanted (111) Si showing two groups of extra diffraction spots; one at positions (m, n integers), the other at adjacent positions between <000> and <220>. The object of the present paper is to show that these extra reflections are a direct consequence of the microtwins in the material.

Defects in ion implanted silicon

1978 ◽  
Vol 36 (1) ◽  
pp. 386-387
Author(s):  
J.A. Lambert ◽  
P.S. Dobson
Keyword(s):  
Defect Structure ◽  
Dislocation Loops ◽  
Frank Loop ◽  
Burgers Vector ◽  
Temperature Range ◽  
Perfect Dislocation ◽  
Contrast Analysis ◽  
Image Position ◽  
Ion Implanted

The defect structure of ion-implanted silicon, which has been annealed in the temperature range 800°C-1100°C, consists of extrinsic Frank faulted loops and perfect dislocation loops, together with‘rod like’ defects elongated along <110> directions. Various structures have been suggested for the elongated defects and it was argued that an extrinsically faulted Frank loop could undergo partial shear to yield an intrinsically faulted defect having a Burgers vector of 1/6 <411>.This defect has been observed in boron implanted silicon (1015 B+ cm-2 40KeV) and a detailed contrast analysis has confirmed the proposed structure.

A technique to prepare cross-sectional TEM specimens of semiconducting devices

1986 ◽  
Vol 44 ◽  
pp. 742-743
Author(s):  
A. K. Rai ◽  
P. P. Pronko
Keyword(s):  
Thin Films ◽  
Surface Region ◽  
Sample Surface ◽  
Specific Region ◽  
Cross Sectional ◽  
Thin Sections ◽  
The Past ◽  
Device Structures ◽  
Ion Implanted

Several techniques have been reported in the past to prepare cross(x)-sectional TEM specimen. These methods are applicable when the sample surface is uniform. Examples of samples having uniform surfaces are ion implanted samples, thin films deposited on substrates and epilayers grown on substrates. Once device structures are fabricated on the surfaces of appropriate materials these surfaces will no longer remain uniform. For samples with uniform surfaces it does not matter which part of the surface region remains in the thin sections of the x-sectional TEM specimen since it is similar everywhere. However, in order to study a specific region of a device employing x-sectional TEM, one has to make sure that the desired region is thinned. In the present work a simple way to obtain thin sections of desired device region is described.

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