Light Intensity Effects on Schottky Device Fabricated with Zn-Complex as an Interfacial Layer

2021 ◽  
Author(s):  
Serdar Karadeniz ◽  
Dilber Esra YILDIZ ◽  
Hasan Huseyin Gullu ◽  
Dursun Ali Kose ◽  
Ali Akbar Hussaini ◽  
...  
Keyword(s):  
Light Intensity ◽  
Interfacial Layer ◽  
Schottky Device

Fine structure of the retina of the giant scallop, Placopecten magellanicus

1984 ◽  
Vol 42 ◽  
pp. 312-313
Author(s):  
C.V.L. Powell
Keyword(s):  
Fine Structure ◽  
Electron Microscope ◽  
Light Intensity ◽  
Scanning Electron Microscope ◽  
Eye Development ◽  
Preliminary Observation ◽  
Columnar Epithelium ◽  
Placopecten Magellanicus ◽  
Environmental Light ◽  
Scanning Electron

The overall fine structure of the eye in Placopecten is similar to that of other scallops. The optic tentacle consists of an outer columnar epithelium which is modified into a pigmented iris and a cornea (Fig. 1). This capsule encloses the cellular lens, retina, reflecting argentea and the pigmented tapetum. The retina is divided into two parts (Fig. 2). The distal retina functions in the detection of movement and the proximal retina monitors environmental light intensity. The purpose of the present study is to describe the ultrastructure of the retina as a preliminary observation on eye development. This is also the first known presentation of scanning electron microscope studies of the eye of the scallop.

Effect of light intensity on the ultrastructure of the filamentous cyanobacterium, Anabaena variabilis

1988 ◽  
Vol 46 ◽  
pp. 300-301
Author(s):  
C. S. Bricker ◽  
S. R. Barnum ◽  
B. Huang ◽  
J. G. Jaworskl
Keyword(s):  
Fatty Acid ◽  
Light Intensity ◽  
Acid Content ◽  
Fatty Acid Content ◽  
Anabaena Variabilis ◽  
Chloroplast Envelope ◽  
Major Constituent ◽  
Filamentous Cyanobacterium ◽  
Photosynthetic Membrane ◽  
Effect Of Light

Cyanobacteria are Gram negative prokaryotes that are capable of oxygenic photosynthesis. Although there are many similarities between eukaryotes and cyanobacteria in electron transfer and phosphorylation during photosynthesis, there are two features of the photosynthetic apparatus in cyanobacteria which distinguishes them from plants. Cyanobacteria contain phycobiliproteins organized in phycobilisomes on the surface of photosynthetic membrane. Another difference is in the organization of the photosynthetic membranes. Instead of stacked thylakolds within a chloroplast envelope membrane, as seen In eukaryotes, IntracytopIasmlc membranes generally are arranged in three to six concentric layers. Environmental factors such as temperature, nutrition and light fluency can significantly affect the physiology and morphology of cells. The effect of light Intensity shifts on the ultrastructure of Internal membrane in Anabaena variabilis grown under controlled environmental conditions was examined. Since a major constituent of cyanobacterial thylakolds are lipids, the fatty acid content also was measured and correlated with uItrastructural changes. The regulation of fatty acid synthesis in cyanobacteria ultimately can be studied if the fatty acid content can be manipulated.

Inter-Method Reliability of Pulse Volume Related Measures Derived Using Finger-Photoplethysmography

2018 ◽  
Vol 32 (4) ◽  
pp. 182-190 ◽  
Author(s):  
Kenta Matsumura ◽  
Koichi Shimizu ◽  
Peter Rolfe ◽  
Masanori Kakimoto ◽  
Takehiro Yamakoshi
Keyword(s):  
Light Intensity ◽  
Adverse Effects ◽  
Light Source ◽  
Direct Current ◽  
Resting State ◽  
Current Component ◽  
Psychophysiological Measures ◽  
Pulse Volume ◽  
Optical Paths ◽  
Sensor Positions

Abstract. Pulse volume (PV) and its related measures, such as modified normalized pulse volume (mNPV), direct-current component (DC), and pulse rate (PR), derived from the finger-photoplethysmogram (FPPG), are useful psychophysiological measures. Although considerable uncertainties exist in finger-photoplethysmography, little is known about the extent of the adverse effects on the measures. In this study, we therefore examined the inter-method reliability of each index across sensor positions and light intensities, which are major disturbance factors of FPPG. From the tips of the index fingers of 12 participants in a resting state, three simultaneous FPPGs having overlapping optical paths were recorded, with their light intensity being changed in three steps. The analysis revealed that the minimum values of three coefficients of Cronbach’s α for ln PV, ln mNPV, ln DC, and PR across positions were .948, .850, .922, and 1.000, respectively, and that those across intensities were .774, .985, .485, and .998, respectively. These findings suggest that ln mNPV and PR can be used for psychophysiological studies irrespective of minor differences in sensor attachment positions and light source intensity, whereas and ln DC can also be used for such studies but under the condition of light intensity being fixed.

Effect of light intensity and water aging on surface hardness of dental resin-composites

2019 ◽  
Vol 64 (11) ◽  
pp. 1007-1014
Author(s):  
Tong XU ◽  
◽  
Jia-Hui ZHANG ◽  
Zhao-Ying LIU ◽  
Xuan LI ◽  
...  
Keyword(s):  
Light Intensity ◽  
Surface Hardness ◽  
Resin Composites ◽  
Dental Resin ◽  
Dental Resin Composites ◽  
Effect Of Light

Scalability of MOCVD-deposited Hafnium Oxide

2003 ◽  
Vol 765 ◽  
Author(s):  
S. Van Elshocht ◽  
R. Carter ◽  
M. Caymax ◽  
M. Claes ◽  
T. Conard ◽  
...  
Keyword(s):  
Hafnium Oxide ◽  
Interfacial Layer ◽  
Gate Dielectric ◽  
Deposition Process ◽  
Oxide Thickness ◽  
Process Conditions ◽  
Primary Concern ◽  
Gate Electrode ◽  
K Value ◽  
High K

AbstractBecause of aggressive downscaling to increase transistor performance, the physical thickness of the SiO2 gate dielectric is rapidly approaching the limit where it will only consist of a few atomic layers. As a consequence, this will result in very high leakage currents due to direct tunneling. To allow further scaling, materials with a k-value higher than SiO2 (“high-k materials”) are explored, such that the thickness of the dielectric can be increased without degrading performance.Based on our experimental results, we discuss the potential of MOCVD-deposited HfO2 to scale to (sub)-1-nm EOTs (Equivalent Oxide Thickness). A primary concern is the interfacial layer that is formed between the Si and the HfO2, during the MOCVD deposition process, for both H-passivated and SiO2-like starting surfaces. This interfacial layer will, because of its lower k-value, significantly contribute to the EOT and reduce the benefit of the high-k material. In addition, we have experienced serious issues integrating HfO2 with a polySi gate electrode at the top interface depending on the process conditions of polySi deposition and activation anneal used. Furthermore, we have determined, based on a thickness series, the k-value for HfO2 deposited at various temperatures and found that the k-value of the HfO2 depends upon the gate electrode deposited on top (polySi or TiN).Based on our observations, the combination of MOCVD HfO2 with a polySi gate electrode will not be able to scale below the 1-nm EOT marker. The use of a metal gate however, does show promise to scale down to very low EOT values.

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