Climate, Rather than Substrate Quality, Remains to Be the Predominant Control on Leaf Decomposition Across Puerto Rican Rain and Dry Forests Following Hurricane Disturbances

SSRN Electronic Journal ◽

10.2139/ssrn.3958871 ◽

2021 ◽

Author(s):

Wei Huang ◽

Grizelle González ◽

María Fernanda Barberena-Arias ◽

Xiaoming Zou

Keyword(s):

Puerto Rican ◽

Leaf Decomposition ◽

Dry Forests ◽

Substrate Quality

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Leaf Decomposition in Two Mediterranean Ecosystems of Southwest Spain: Influence of Substrate Quality

Ecology ◽

10.2307/1939510 ◽

1993 ◽

Vol 74 (1) ◽

pp. 152-161 ◽

Cited By ~ 208

Author(s):

Antonio Gallardo ◽

Jose Merino

Keyword(s):

Mediterranean Ecosystems ◽

Leaf Decomposition ◽

Substrate Quality ◽

Influence Of Substrate

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Effects of substrate quality and annealing on defect structures at GaAs/Si interfaces

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100126494 ◽

1987 ◽

Vol 45 ◽

pp. 340-341

Author(s):

H. L. Tsai ◽

J. W. Lee

Keyword(s):

Growth Process ◽

Molecular Beam ◽

Substrate Surface ◽

Lattice Misfit ◽

Device Fabrication ◽

Silicon Substrates ◽

Defect Structures ◽

Gaas Film ◽

Substrate Quality ◽

Gaas On Si

Growth of GaAs on Si using epitaxial techniques has been receiving considerable attention for its potential application in device fabrication. However, because of the 4% lattice misfit between GaAs and Si, defect generation at the GaAs/Si interface and its propagation to the top portion of the GaAs film occur during the growth process. The performance of a device fabricated in the GaAs-on-Si film can be degraded because of the presence of these defects. This paper describes a HREM study of the effects of both the substrate surface quality and postannealing on the defect propagation and elimination.The silicon substrates used for this work were 3-4 degrees off [100] orientation. GaAs was grown on the silicon substrate by molecular beam epitaxy (MBE).

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