A Dual-Tunable Ultra-Broadband Terahertz Absorber Based on Graphene and Strontium Titanate

2021 ◽  
Author(s):  
Jiali Wu ◽  
Xin Yan ◽  
Xueguang Yuan ◽  
Yangan Zhang ◽  
Xia Zhang
2021 ◽  
Vol 29 (5) ◽  
pp. 7713
Author(s):  
Tong Wu ◽  
Yabin Shao ◽  
Shuai Ma ◽  
Guan Wang ◽  
Yachen Gao

2021 ◽  
pp. 105039
Author(s):  
Jiali Wu ◽  
Xin Yan ◽  
Xueguang Yuan ◽  
Yangan Zhang ◽  
Xia Zhang

2012 ◽  
Vol 20 (12) ◽  
pp. 13566 ◽  
Author(s):  
Dae-Seon Kim ◽  
Dong-Hyun Kim ◽  
Sehyun Hwang ◽  
Jae-Hyung Jang

2011 ◽  
Vol 9 (s1) ◽  
pp. s10402-310404 ◽  
Author(s):  
Dainan Zhang Dainan Zhang ◽  
Qiye Wen Qiye Wen ◽  
Yunsong Xie Yunsong Xie

2016 ◽  
Vol 45 (11) ◽  
pp. 1105001
Author(s):  
郭剑琴 GUO Jian-qin ◽  
徐德刚 XU De-gang ◽  
刘鹏翔 LIU Peng-xiang ◽  
王与烨 WANG Yu-ye ◽  
钟凯 ZHONG Kai ◽  
...  

Micromachines ◽  
2020 ◽  
Vol 11 (12) ◽  
pp. 1096
Author(s):  
Jiali Wu ◽  
Xueguang Yuan ◽  
Yangan Zhang ◽  
Xin Yan ◽  
Xia Zhang

A dual-controlled tunable broadband terahertz absorber based on a hybrid graphene-Dirac semimetal structure is designed and studied. Owing to the flexible tunability of the surface conductivity of graphene and relative permittivity of Dirac semimetal, the absorption bandwidth can be tuned independently or jointly by shifting the Fermi energy through chemical doping or applying gate voltage. Under normal incidence, the device exhibits a high absorption larger than 90% over a broad range of 4.06–10.7 THz for both TE and TM polarizations. Moreover, the absorber is insensitive to incident angles, yielding a high absorption over 90% at a large incident angle of 60° and 70° for TE and TM modes, respectively. The structure shows great potential in miniaturized ultra-broadband terahertz absorbers and related applications.


2020 ◽  
Vol 128 (9) ◽  
pp. 093104 ◽  
Author(s):  
Ling Liu ◽  
Wenwen Liu ◽  
Zhengyong Song

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