Combined Merits of High Dielectric Breakdown Strength and Low Sintering Temperature Acquired in Mgo-Baseddielectric Ceramics: From Theoretical Prediction to Experimental Validation

2021 ◽  
Author(s):  
Chi Zhang ◽  
Jian Huang ◽  
Ying Chen ◽  
Ziming Cai ◽  
Genshui Wang ◽  
...  
Keyword(s):  
Theoretical Prediction ◽  
Experimental Validation ◽  
Dielectric Breakdown ◽  
Breakdown Strength ◽  
Sintering Temperature ◽  
Dielectric Breakdown Strength ◽  
Low Sintering Temperature ◽  
High Dielectric

Dielectric Breakdown Mechanism of Perovskite-Structured Ceramics

2015 ◽  
Vol 2015 (CICMT) ◽  
pp. 000116-000120 ◽  
Author(s):  
Takuya Hoshina ◽  
Mikio Yamazaki ◽  
Hiroaki Takeda ◽  
Takaaki Tsurumi
Keyword(s):  
High Temperature ◽  
Room Temperature ◽  
Oxygen Vacancies ◽  
Dielectric Breakdown ◽  
Breakdown Strength ◽  
Dielectric Breakdown Strength ◽  
Breakdown Mechanism ◽  
High Dielectric ◽  
Measurement Efficiency ◽  
Breakdown Model

We precisely measured the dielectric breakdown strength of SrTiO3, CaTiO3, and CaZrO3 ceramics as a function of temperature, and revealed the dielectric breakdown mechanism of the ceramics. For the dielectric breakdown test, ceramics specimens with a lot of round-bottom holes were prepared. Using the specimens, the breakdown positions were stabilized and a reliability of breakdown strength was improved as well as the measurement efficiency. As a result of the dielectric breakdown tests, it was found that the dielectric breakdown strength decreased with increasing permittivity at room temperature and the permittivity dependence of breakdown strength obeyed Griffith type energy release rate model. At high temperature above 100ºC, the dielectric breakdown mechanism of SrTiO3 and CaTiO3 ceramics was explained by an intrinsic breakdown model. In contrast, an intrinsic dielectric breakdown of CaZrO3 ceramics didn't occur in the measurement temperature range up to 210ºC. To obtain a high dielectric breakdown strength at high temperature, the dielectric permittivity is required to be low to some extent and the defect concentration of oxygen vacancies should be minimized in the perovskite-structured oxide.

Gate Oxide with High Dielectric Breakdown Strength after Undergoing a Typical Power MOSFET Fabrication Process

2003 ◽  
Vol 433-436 ◽  
pp. 725-730 ◽  
Author(s):  
Satoshi Tanimoto ◽  
Masakatsu Hoshi ◽  
Norihiko Kiritani ◽  
Hideyo Okushi ◽  
Kazuo Arai
Keyword(s):  
Dielectric Breakdown ◽  
Breakdown Strength ◽  
Gate Oxide ◽  
Fabrication Process ◽  
Dielectric Breakdown Strength ◽  
Power Mosfet ◽  
High Dielectric

Silicone elastomers with high dielectric permittivity and high dielectric breakdown strength based on dipolar copolymers

Polymer ◽  
2014 ◽  
Vol 55 (24) ◽  
pp. 6212-6219 ◽  
Author(s):  
Frederikke Bahrt Madsen ◽  
Liyun Yu ◽  
Anders Egede Daugaard ◽  
Søren Hvilsted ◽  
Anne Ladegaard Skov
Keyword(s):  
Dielectric Permittivity ◽  
Dielectric Breakdown ◽  
Breakdown Strength ◽  
Silicone Elastomers ◽  
Dielectric Breakdown Strength ◽  
High Dielectric Permittivity ◽  
Strength Based ◽  
High Dielectric

Achieving ultrahigh dielectric breakdown strength in MgO-based ceramics by composite structure design

2019 ◽  
Vol 7 (26) ◽  
pp. 8120-8130 ◽  
Author(s):  
Chi Zhang ◽  
Ying Chen ◽  
Mingxing Zhou ◽  
Xin Li ◽  
Lei Wang ◽  
...  
Keyword(s):  
Composite Structure ◽  
Dielectric Breakdown ◽  
Breakdown Strength ◽  
Electronic Materials ◽  
Scientific Research ◽  
Structure Design ◽  
Dielectric Breakdown Strength ◽  
Breakdown Mechanism ◽  
Industry Applications ◽  
High Dielectric

The pursuit of electronic materials and devices with high dielectric breakdown strength (DBS), and the clarification of the dielectric breakdown mechanism are of great importance to scientific research and industry applications.

Electronic and Optoelectronic Applications of Materials Grown at a Low Temperature by MBE

1991 ◽  
Vol 241 ◽  
Author(s):  
U. K. Mishra ◽  
R. M. Kolbas
Keyword(s):  
Low Temperature ◽  
Carrier Lifetime ◽  
Dielectric Breakdown ◽  
Breakdown Strength ◽  
Picosecond Pulse ◽  
Pulse Generation ◽  
Dielectric Breakdown Strength ◽  
Switching Power ◽  
Excess Amount ◽  
High Dielectric

ABSTRACTMaterials grown at a low temperature by MBE and subsequently annealed at a high temperature have an excess amount of Arsenic and have demonstrated high dielectric breakdown strength and low carrier lifetime. These properties have found applications in analog and switching power applications, in picosecond pulse generation, in device isolation and in the selective intermixing of heterostructures. This paper reviews these applications.

scholarly journals Dielectric Breakdown Strength and Energy Storage Density of CCTO-ZBS Electroceramic

2020 ◽  
Vol 596 ◽  
pp. 012006
Author(s):  
Muhammad Qusyairie Saari ◽  
Julie Juliewatty Mohamed ◽  
Muhammad Azwadi Sulaiman ◽  
Mohd Fariz Abd Rahman ◽  
Zainal Arifin Ahmad ◽  
...  
Keyword(s):  
Energy Storage ◽  
Dielectric Breakdown ◽  
Breakdown Strength ◽  
Energy Storage Density ◽  
Dielectric Breakdown Strength ◽  
Storage Density
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