Exceptional Combination of Large Magnetostriction, Low Hysteresis and Wide Working Temperature Range in (1-x)TbFe2-xDyCo2 Alloys

2021 ◽  
Author(s):  
Hui Zhao ◽  
Yuanchao Ji ◽  
Tianyu Ma ◽  
Minxia Fang ◽  
Yanshuang Hao ◽  
...  
2018 ◽  
Vol 38 (1) ◽  
pp. 67-74 ◽  
Author(s):  
Bo Tang ◽  
Mingchao Wang ◽  
Ruiming Liu ◽  
Jiachen Liu ◽  
Haiyan Du ◽  
...  

2016 ◽  
Author(s):  
JianLong Wang ◽  
YaTing Zhang ◽  
MingXuan Cao ◽  
XiaoXian Song ◽  
YongLi Che ◽  
...  

2022 ◽  
Author(s):  
Y. Wu ◽  
Fei Zhang ◽  
Fengshou Li ◽  
Yi Yang ◽  
Jiaming Zhu ◽  
...  

Superelasticity associated with the martensitic transformation has found a broad range of engineering applications such as low-temperature devices in aerospace industry. Nevertheless, the narrow working temperature range and strong temperature...


2020 ◽  
Vol 5 (3) ◽  
pp. 1214-1219 ◽  
Author(s):  
Yuchan Zhang ◽  
Huifang Fei ◽  
Yongling An ◽  
Chuanliang Wei ◽  
Jinkui Feng

Metallurgist ◽  
2011 ◽  
Vol 54 (9-10) ◽  
pp. 641-646 ◽  
Author(s):  
A. A. Ulanovskii ◽  
S. I Kalimulina ◽  
A. M. Belenkii ◽  
A. N. Bursin ◽  
L. N. Dergausova

2013 ◽  
Vol 740-742 ◽  
pp. 498-501
Author(s):  
A.V. Afanasyev ◽  
V.A. Ilyin ◽  
V.V. Luchinin ◽  
A.S. Petrov

3C-SiC (n) / Si (p) heterostructures were obtained and investigated in a wide temperature range. It was shown, the main mechanisms of charge transport diffusion and recombination. The properties of silicon substrate were determining the working temperature range of investigated diodes. Therefore the rectifying properties of 3С-SiC(n)/Si(p) diodes were stable only up to 473 K. Two sites with different activation energies were observed on the Jrev(1/T) curves at fixed voltage: 0,32 eV which, characterized states on the SiC/Si interface, Е2 ≈ 0,55 eV which corresponds to the middle of silicon bandgap and defines existence of reverse current generation component.


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