A High-Frequency EPR Study of Magnetic Anisotropy and Intermolecular Interactions on Co(II) Ions

2021 ◽  
Author(s):  
Lena Spillecke ◽  
Shalini Tripathi ◽  
Changhyun Koo ◽  
Mursaleem Ansari ◽  
Shefali Vaidya ◽  
...  
Keyword(s):  
Magnetic Anisotropy ◽  
Intermolecular Interactions ◽  
High Frequency

A high-frequency EPR study of magnetic anisotropy and intermolecular interactions of Co(II) ions

Polyhedron ◽  
2021 ◽  
pp. 115389
Author(s):  
Lena Spillecke ◽  
Shalini Tripathi ◽  
Changhyun Koo ◽  
Mursaleem Ansari ◽  
Shefali Vaidya ◽  
...  
Keyword(s):  
Magnetic Anisotropy ◽  
Intermolecular Interactions ◽  
High Frequency

scholarly journals High Frequency Magnetoimpedance of FeNi/Cu/FeNi Sensitive Elements with Different Geometries

2009 ◽  
Vol 152-153 ◽  
pp. 373-376 ◽  
Author(s):  
Stanislav O. Volchkov ◽  
Andrey V. Svalov ◽  
G.V. Kurlyandskaya
Keyword(s):  
Magnetic Field ◽  
Experimental Data ◽  
External Magnetic Field ◽  
Finite Elements ◽  
Magnetic Anisotropy ◽  
Constant Magnetic Field ◽  
High Frequency ◽  
Complex Impedance ◽  
Rf Sputtering ◽  
Frequency Range

In this work magnetoimpedance (MI) behaviour was studied experimentally for Fe19Ni81(175 nm)/Cu(350 nm)/Fe19Ni81(175 nm) sensitive elements deposited by rf-sputtering. A constant magnetic field was applied in plane of the sandwiches during deposition perpendicular to the Cu-lead in order to induce a magnetic anisotropy. Sandwiches with different width (w) of FeNi parts were obtained. The complex impedance was measured as a function of the external magnetic field for a frequency range of 1 MHz to 700 MHz for MI elements with different geometries. Some of MI experimental data are comparatively analysed with finite elements numerical calculations data. The obtained results can be useful for optimization of the design of miniaturized MI detectors.

High-Frequency Properties of Multilayer Systems Based on the (Co41Fe39B20)X(SiO2)100-X and (Co45Fe45Zr10)X(Al2O3)100-X Nanocomposites

2015 ◽  
Vol 233-234 ◽  
pp. 467-470 ◽  
Author(s):  
Haider Al Azzawi ◽  
Yuri Kalinin ◽  
Alexander Sitnikov ◽  
Oksana Tarasova
Keyword(s):  
Magnetic Anisotropy ◽  
High Frequency ◽  
Ion Beam ◽  
Perpendicular Magnetic Anisotropy ◽  
Complex Permeability ◽  
Heterogeneous Structure ◽  
Ion Beam Sputtering ◽  
Multilayer Systems ◽  
Beam Sputtering ◽  
Frequency Properties

New {[({[(Co41Fe39B20)X(SiO2)100X]/[(Co41Fe39B20)X(SiO2)100х+O2]}178 and {[(Co45Fe45Zr10)X(Al2O3)100-X]/[(Co45Fe45Zr10)X(Al2O3)100-X+O2]}300 multilayer heterogeneous structure has been obtained by ion-beam sputtering method. Magnetostatic and magnetodynamic properties and the structure of the nanocomposites have been investigated. It was shown that, the oxidized interlayer composite adding lead to suppression of perpendicular magnetic anisotropy component, and a change in the magnetic structure of the composites, which determines the change in the frequency dependence of the real (μ/) and imaginary (μ//) parts of the complex permeability.

High-Frequency Ferromagnetic Properties of Nanocrystalline (Co2FeSi)1-x(Al2O3)x Heusler Alloy Films with Uniaxial Magnetic Anisotropy

2014 ◽  
Vol 787 ◽  
pp. 342-346
Author(s):  
Xiao Qin Cao ◽  
Shan Dong Li ◽  
Zhi Yi Cai ◽  
Hong Lei Du ◽  
Qian Xue ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Magnetic Anisotropy ◽  
High Frequency ◽  
Heusler Alloy ◽  
Alloy Films ◽  
Uniaxial Magnetic Anisotropy ◽  
Self Bias ◽  
Ferromagnetic Resonance Frequency ◽  
Deposited Films ◽  
Very High

A series of (Co2FeSi)1-x(Al2O3)xHeusler alloy films with various Al2O3-doping were prepared by an oblique sputtering method. It is exciting that the as-deposited films exhibit a very high in-plane uniaxial magnetic anisotropy (UMA) field up to 360 Oe and low coercivity of 12 Oe. Consequently, a very high self-bias ferromagnetic resonance frequency in excess of 5.02 GHz was obtained in as-deposited Co2FeSi films without any annealing. The good microwave ferromagnetic performances and the integrated circuits compatible fabrication process of Co2FeSi films make possible application in RF/microwave devices.

Magnetic anisotropy, tunneling effects, high-frequency EPR, and molecular structure of fast-relaxation species ofMn12

2002 ◽  
Vol 65 (9) ◽  
Author(s):  
Keiji Takeda ◽  
Kunio Awaga ◽  
Tamotsu Inabe ◽  
Akira Yamaguchi ◽  
Hidehiko Ishimoto ◽  
...  
Keyword(s):  
Molecular Structure ◽  
Magnetic Anisotropy ◽  
High Frequency ◽  
Fast Relaxation

Spin Reorientation Transition and Magnetization Reversal Mechanism of Gd Doped FeCo High-Frequency Soft Magnetic Thin Films

2014 ◽  
Vol 924 ◽  
pp. 141-151 ◽  
Author(s):  
Yu Rong An ◽  
Yue Li ◽  
Zhen Wang ◽  
Ya Lu Zuo ◽  
Li Xi
Keyword(s):  
Thin Films ◽  
Magnetic Anisotropy ◽  
Magnetization Reversal ◽  
High Frequency ◽  
Uniaxial Anisotropy ◽  
Spin Reorientation ◽  
Spin Reorientation Transition ◽  
Sputtering Power ◽  
Deposition Power ◽  
Reversal Mechanism

The magnetic FeCoGd thin films with various sputtering power from 10 to 30 W were fabricated on glass substrates by magnetron co-sputtering. The crystal structure of as-deposited FeCoGd thin films was investigated by X-ray diffraction. And an increasing trend of grain size with the increasing sputtering power was shown. When sputtering power is below 30 W, the films exhibited obviously in-plane uniaxial magnetic anisotropy, and the in-plane magnetic anisotropy field Hkdecreased with increasing deposition power. Moreover, good high frequency characteristics were obtained. The magnetization reversal mechanism has been investigated via the in-plane angular dependences of the magnetization and the coercivity. The experimental data points indicated that the magnetization reversal mechanism of FeCoGd film with in-plane uniaxial anisotropy is domain-wall depinning and coherent rotation when the applied field is close to the easy axis and hard axis, respectively. A spin reorientation transition phenomenon was observed when deposition power is larger than 30 W. A stripe domain structure for the sample with 30 W deposition power was developed due to a dominated perpendicular magnetic anisotropy.

Effect of the Thickness of Cr Interlayer on the High-Frequency Characteristics of FeCoTa/Cr/FeCoTa Multilayers

2011 ◽  
Vol 287-290 ◽  
pp. 1356-1359
Author(s):  
Shan Dong Li ◽  
Feng Xu ◽  
Ming Liu ◽  
Yi Hu ◽  
Jian Peng Wu ◽  
...  
Keyword(s):  
Magnetic Anisotropy ◽  
Eddy Current ◽  
High Frequency ◽  
Anisotropy Field ◽  
Eddy Current Loss ◽  
Film Sample ◽  
Current Loss ◽  
Ferromagnetic Layers ◽  
Magnetic Decoupling ◽  
Ferromagnetic Resonance Frequency

The effect of non-ferromagnetic Cr interlayer on the high-frequency ferromagnetic properties (HFFMPs) was investigated by use of FeCoTa/Cr/ FeCoTa triple layered films. In conventional thought, the metal interlayer gives rise to a high eddy current loss and therefore a deteriorated HFFMP. However, it is found that HFFMPs depend on the thickness of Cr interlayer. The HFFPMs are improved by Cr-interlayer with a thickness less than 12 nm (sample C1). Comparing with the Cr-interlayer-free FeCoHf single layered film (sample C0), the magnetic anisotropy field of C1 dramatically increases from 185 Oe for C0 to 558 Oe for C1. As a consequence, a high ferromagnetic resonance frequency over than 3 GHz is achieved for sample C1. When the thickness of Cr-interlayer is more than 120 nm (C2), the HFFMPs are reduced due to the increase of eddy current loss and magnetic decoupling between the ferromagnetic layers.

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