Anisotropic Microstructural Evolution and Coarsening in Free Sintering and Constrained Sintering of Metal Film by Using FIB-SEM Tomography

2021 ◽  
Author(s):  
Gaku Okuma ◽  
Ryo Miyaki ◽  
Kan Shinobe ◽  
Anna Sciazko ◽  
Takaaki Shimura ◽  
...  
Keyword(s):  
Microstructural Evolution ◽  
Metal Film ◽  
Constrained Sintering

Anisotropic microstructural evolution and coarsening in free sintering and constrained sintering of metal film by using FIB-SEM tomography

2021 ◽  
pp. 117087
Author(s):  
Gaku Okuma ◽  
Ryo Miyaki ◽  
Kan Shinobe ◽  
Anna Sciazko ◽  
Takaaki Shimura ◽  
...  
Keyword(s):  
Microstructural Evolution ◽  
Metal Film ◽  
Constrained Sintering

scholarly journals Modeling the Microstructural Evolution During Constrained Sintering

2015 ◽  
Vol 98 (11) ◽  
pp. 3490-3495 ◽  
Author(s):  
Rasmus Bjørk ◽  
Hendrik Lund Frandsen ◽  
Nini Pryds
Keyword(s):  
Microstructural Evolution ◽  
Constrained Sintering

Microstructural Evolution in Reduced TiO2

1981 ◽  
Vol 39 ◽  
pp. 74-75
Author(s):  
W. T. Donlon ◽  
S. Shinozaki ◽  
E. M. Logothetis ◽  
W. Kaizer
Keyword(s):  
Microstructural Evolution ◽  
Point Defects ◽  
Extended Defects ◽  
Small Deviations ◽  
Controlled Atmospheres ◽  
Limited Solubility ◽  
Thin Foils ◽  
Heat Treated ◽  
Porous Polycrystalline ◽  
Crystallographic Shear

Since point defects have a limited solubility in the rutile (TiO2) lattice, small deviations from stoichiometry are known to produce crystallographic shear (CS) planes which accomodate local variations in composition. The material used in this study was porous polycrystalline TiO2 (60% dense), in the form of 3mm. diameter disks, 1mm thick. Samples were mechanically polished, ion-milled by conventional techniques, and initially examined with the use of a Siemens EM102. The electron transparent thin foils were then heat-treated under controlled atmospheres of CO/CO2 and H2 and reexamined in the same manner.The “as-received” material contained mostly TiO2 grains (∼5μm diameter) which had no extended defects. Several grains however, aid exhibit a structure similar to micro-twinned grains observed in reduced rutile. Lattice fringe images (Fig. 1) of these grains reveal that the adjoining layers are not simply twin related variants of a single TinO2n-1 compound. Rather these layers (100 - 250 Å wide) are alternately comprised of stoichiometric TiO2 (rutile) and reduced TiO2 in the form of Ti8O15, with the Ti8O15 layers on either side of the TiO2 being twin related.

The method of replication affects metal film granularity and resolution

1989 ◽  
Vol 47 ◽  
pp. 708-709
Author(s):  
George C. Ruben
Keyword(s):  
Electron Beam ◽  
High Resolution ◽  
Film Thickness ◽  
Single Molecule ◽  
Metal Film ◽  
Vertical Surface ◽  
High Resolution Imaging ◽  
Controllable Factors ◽  
Resolution Imaging

Single molecule resolution in electron beam sensitive, uncoated, noncrystalline materials has been impossible except in thin Pt-C replicas ≤ 150Å) which are resistant to the electron beam destruction. Previously the granularity of metal film replicas limited their resolution to ≥ 20Å. This paper demonstrates that Pt-C film granularity and resolution are a function of the method of replication and other controllable factors. Low angle 20° rotary , 45° unidirectional and vertical 9.7±1 Å Pt-C films deposited on mica under the same conditions were compared in Fig. 1. Vertical replication had a 5A granularity (Fig. 1c), the highest resolution (table), and coated the whole surface. 45° replication had a 9Å granulartiy (Fig. 1b), a slightly poorer resolution (table) and did not coat the whole surface. 20° rotary replication was unsuitable for high resolution imaging with 20-25Å granularity (Fig. 1a) and resolution 2-3 times poorer (table). Resolution is defined here as the greatest distance for which the metal coat on two opposing faces just grow together, that is, two times the apparent film thickness on a single vertical surface.

AlCu Pattern Generation on 3D StructuredWafer Using Multi Level Exposure Method on Electrodeposited Polymer Material

2003 ◽  
Vol 766 ◽  
Author(s):  
Vineet Sharma ◽  
Arief B. Suriadi ◽  
Frank Berauer ◽  
Laurie S. Mittelstadt
Keyword(s):  
Line Width ◽  
Metal Film ◽  
Focal Depth ◽  
Cost Effective ◽  
Pattern Generation ◽  
Promising Technique ◽  
Critical Dimensions ◽  
Exposure Method ◽  
Multi Level ◽  
3D Surfaces

AbstractNormal photolithography tools have focal depth limitations and are unable to meet the expectations of high resolution photolithography on highly topographic structures. This paper shows a cost effective and promising technique of combining two different approaches to achieve critical dimensions of traces on slope pattern continuity on highly topographic structures. Electrophoretically deposited photoresist is used on 3-D structured wafers. This photoresist coating technique is fairly known in the MEMS industries to achieve uniform and conformal photoresist films on 3D surfaces. Multi step exposures are used to expose electrophoretically deposited photoresist. AlCu (Cu-0.5%), 0.47-0.53 μm thick metal film is deposited on 3D structured silicon substrate to plate photoresist. By combining these two novel methods, metal (AlCu) traces of 75 μm line width and 150 μm pitch (from top flat to down the slope) have been demonstrated on isotropically etched 350 μm deep trenches with 5-10% line width loss.

Electrical Failure and Damage Analysis of Multi-Layer Metal Films on Flexible Substrate during Cyclic Bending Deformation

2011 ◽  
Author(s):  
Byoung-Joon Kim ◽  
Hae-A-Seul Shin ◽  
In-Suk Choi ◽  
Young-Chang Joo
Keyword(s):  
Fatigue Resistance ◽  
Electrical Resistance ◽  
Metal Film ◽  
Flexible Substrate ◽  
Resistance Change ◽  
Cyclic Bending ◽  
Capping Layer ◽  
Bending Strain ◽  
Cu Film ◽  
Electrical Resistance Change

Abstract The electrical resistance Cu film on flexible substrate was investigated in cyclic bending deformation. The electrical resistance of 1 µm thick Cu film on flexible substrate increased up to 120 % after 500,000 cycles in 1.1 % tensile bending strain. Crack and extrusion were observed due to the fatigue damage of metal film. Low bending strain did not cause any damage on metal film but higher bending strain resulted in severe electrical and mechanical damage. Thinner film showed higher fatigue resistance because of the better mechanical property of thin film. Cu film with NiCr under-layer showed poorer fatigue resistance in tensile bending mode. Ni capping layer did not improve the fatigue resistance of Cu film, but Al capping layer suppressed crack formation and lowered electrical resistance change. The NiCr under layer, Ni capping layer, and Al capping layer effect on electrical resistance change of Cu film was compared with Cu only sample.

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