Optimal Stress Tests and Liquidation Cost

Algorithms Could Replace Stress Tests

Family Practice News ◽

10.1016/s0300-7073(05)70929-4 ◽

2005 ◽

Vol 35 (13) ◽

pp. 18

Author(s):

SHERRY BOSCHERT

Keyword(s):

Stress Tests

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Stress Tests in Banking – main theoretical and practical aspects

Indian Journal Of Applied Research ◽

10.15373/2249555x/july2013/48 ◽

2011 ◽

Vol 3 (7) ◽

pp. 163-165 ◽

Cited By ~ 1

Author(s):

Prof. Piotr Masiukiewicz ◽

◽

Paweł Dec Paweł Dec

Keyword(s):

Stress Tests

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Test method recommendations of RILEM TC 177-MDT 'Masonry durability and on-site testing' - D.4: In-situ stress tests based on the flat jack

Materials and Structures ◽

10.1617/14119 ◽

2004 ◽

Vol 37 (271) ◽

pp. 491-496 ◽

Cited By ~ 6

Author(s):

Keyword(s):

In Situ Stress ◽

Test Method ◽

Stress Tests ◽

Site Testing

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Characterization of CMOS Structures (0.6 µm process) Submitted to HBM and COM ESD Stress Tests

ISTFA 1997: Conference Proceedings from the 23rd International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa1997p0315 ◽

1997 ◽

Author(s):

G. Meneghesso ◽

E. Zanoni ◽

P. Colombo ◽

M. Brambilla ◽

R. Annunziata ◽

...

Keyword(s):

Electron Microscopy ◽

Electrostatic Discharge ◽

Stress Test ◽

Complete Characterization ◽

Stress Tests ◽

Test Procedures ◽

Emission Microscopy ◽

Fast Rise ◽

Scanning Electron

Abstract In this work, we present new results concerning electrostatic discharge (ESD) robustness of 0.6 μm CMOS structures. Devices have been tested according to both HBM and socketed CDM (sCDM) ESD test procedures. Test structures have been submitted to a complete characterization consisting in: 1) measurement of the tum-on time of the protection structures submitted to pulses with very fast rise times; 2) ESD stress test with the HBM and sCDM models; 3) failure analysis based on emission microscopy (EMMI) and Scanning Electron Microscopy (SEM).

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The Investigation of Fluorine Induced Novel Probe Marker Discoloration

10.31399/asm.cp.istfa2018p0413 ◽

2018 ◽

Author(s):

W.F. Hsieh ◽

Henry Lin ◽

Vincent Chen ◽

Irene Ou ◽

Y.S. Lou

Keyword(s):

Electric Field ◽

Dark Field ◽

Inspection System ◽

Automated Inspection ◽

Stress Tests ◽

Auger Analysis ◽

Corrosion Film ◽

Scan Data ◽

Thickness Variations ◽

One Year

Abstract This paper describes the investigation of donut-shaped probe marker discolorations found on Al bondpads. Based on SEM/EDS, TEM/EELS, and Auger analysis, the corrosion product is a combination of aluminum, fluorine, and oxygen, implying that the discolorations are due to the presence of fluorine. Highly accelerated stress tests simulating one year of storage in air resulted in no new or worsening discolorations in the affected chips. In order to identify the exact cause of the fluorine-induced corrosion, the authors developed an automated inspection system that scans an entire wafer, recording and quantifying image contrast and brightness variations associated with discolorations. Dark field TEM images reveal thickness variations of up to 5 nm in the corrosion film, and EELS line scan data show the corresponding compositional distributions. The findings indicate that fluorine-containing gases used in upstream processes leave residues behind that are driven in to the Al bondpads by probe-tip forces and activated by the electric field generated during CP testing. The knowledge acquired has proven helpful in managing the problem.

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