Cooperative Knowledge Creation: The Case of Buyer-Supplier Co-Development in the Semiconductor Industry

2001 ◽  
Author(s):  
Melissa M. Appleyard
Keyword(s):  
Knowledge Creation ◽  
Semiconductor Industry ◽  
Cooperative Knowledge

Knowledge-based dynamic capabilities: a joint R&D project in the French semiconductor industry

2019 ◽  
Vol 23 (3) ◽  
pp. 439-465 ◽  
Author(s):  
Kadígia Faccin ◽  
Alsones Balestrin ◽  
Bibiana Volkmer Martins ◽  
Claudia Cristina Bitencourt
Keyword(s):  
Knowledge Creation ◽  
Dynamic Capabilities ◽  
Semiconductor Industry ◽  
Secondary Data ◽  
Structured Interviews ◽  
Content Type ◽  
Knowledge Based ◽  
Knowing That ◽  
Methodological Advance ◽  
Successful Innovation

Purpose The purpose of this study is to identify dynamic capabilities in joint R&D projects, that enable them to successfully achieve knowledge creation and discover how they behave throughout the life cycle of a collaborative project, although this understanding could enhance the interorganizational knowledge creation process. Design/methodology/approach The authors conducted 65 semi-structured interviews and utilized secondary data from a joint R&D project. The authors analyzed all data using the Gioia method. Findings The authors confirm that specific dynamic capabilities are needed to create interorganizational knowledge and discovered 11 knowledge-based dynamic capabilities (KBDCs) for successful innovation results in joint R&D projects. Gioia method allowed to discover that different KBDCs are necessary for the different phases of the project lifecycle. Additionally, the authors identify two microprocesses in which KBDCs are engaged in joint R&D projects, knowing that is a part of the sensing and seizing processes and synthetizing that is a part of the seizing process, and establish several KBDC microfoundations. Research limitations/implications We used retrospective interviews. This kind of interviews are impacted by the experiences of the respondents lived after they have participated in the joint R&D project. Practical implications Dynamic capabilities for collaborative knowledge creation and their specific microfoundations can help managers delineate their strategic practices and actions to achieve more sustainable, long-lasting results from joint R&D projects. Originality/value The authors improve Teece’s model and propose two microprocesses in which dynamic capabilities are engaged, that emerged in the context of a joint R&D project, knowing that is a part of the sensing and seizing processes and synthetizing that is a part of the seizing process, which supplement those already known: sensing, seizing and transforming. The authors tested the Gioia method, which is important for detecting dynamic capabilities; therefore, the authors propose a methodological advance that can contribute to future studies. The authors provide an interorganizational perspective on KBDC and a methodological view of the changes in KBDCs required for joint R&D projects.

Applications of SIMS to electronic materials and devices

1992 ◽  
Vol 50 (2) ◽  
pp. 1682-1683
Author(s):  
S.F. Corcoran
Keyword(s):  
Depth Distribution ◽  
Secondary Ion Mass Spectrometry ◽  
Semiconductor Device ◽  
Electronic Materials ◽  
Profile Analysis ◽  
Semiconductor Industry ◽  
Small Diameter ◽  
Depth Resolution ◽  
Detection Sensitivity

Over the past decade secondary ion mass spectrometry (SIMS) has played an increasingly important role in the characterization of electronic materials and devices. The ability of SIMS to provide part per million detection sensitivity for most elements while maintaining excellent depth resolution has made this technique indispensable in the semiconductor industry. Today SIMS is used extensively in the characterization of dopant profiles, thin film analysis, and trace analysis in bulk materials. The SIMS technique also lends itself to 2-D and 3-D imaging via either the use of stigmatic ion optics or small diameter primary beams.By far the most common application of SIMS is the determination of the depth distribution of dopants (B, As, P) intentionally introduced into semiconductor materials via ion implantation or epitaxial growth. Such measurements are critical since the dopant concentration and depth distribution can seriously affect the performance of a semiconductor device. In a typical depth profile analysis, keV ion sputtering is used to remove successive layers the sample.

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