High-pressure CVD Growth of InN and Indium-rich Group III-nitride Compound Semiconductors for Novel Mid- and Far-infrared Detectors and Emitters

2010 ◽  
Author(s):  
Nikolaus Dietz
Keyword(s):  
High Pressure ◽  
Infrared Detectors ◽  
Far Infrared ◽  
Compound Semiconductors ◽  
Group Iii ◽  
Far Infrared Detectors ◽  
Cvd Growth ◽  
Group Iii Nitride

Novel far-infrared detectors for space applications

1999 ◽  
Author(s):  
A. G. Unil Perera ◽  
W. Z. Shen ◽  
Hui C. Liu ◽  
Margaret Buchanan ◽  
William J. Schaff
Keyword(s):  
Infrared Detectors ◽  
Far Infrared ◽  
Space Applications ◽  
Far Infrared Detectors

scholarly journals Erratum: “Negative capacitance of GaAs homojunction far-infrared detectors” [Appl. Phys. Lett. 74, 3167 (1999)]

1999 ◽  
Vol 75 (2) ◽  
pp. 304-304 ◽  
Author(s):  
A. G. U. Perera ◽  
W. Z. Shen ◽  
M. Ershov ◽  
H. C. Liu ◽  
M. Buchanan ◽  
...  
Keyword(s):  
Infrared Detectors ◽  
Far Infrared ◽  
Negative Capacitance ◽  
Far Infrared Detectors

Germanium blocked‐impurity‐band far‐infrared detectors

1988 ◽  
Vol 52 (19) ◽  
pp. 1602-1604 ◽  
Author(s):  
Dan M. Watson ◽  
James E. Huffman
Keyword(s):  
Infrared Detectors ◽  
Far Infrared ◽  
Impurity Band ◽  
Far Infrared Detectors
Sign in / Sign up

Export Citation Format

Share Document