Solid State Recrystallization of Single Crystal Ce:LSO Scintillator Crystals for High Resolution Detectors

2012 ◽  
Author(s):  
David W. Snyder ◽  
Charles R. Shanta
Keyword(s):  
Solid State ◽  
High Resolution ◽  
Single Crystal ◽  
Solid State Recrystallization

High-resolution dipolar n.m.r. spectra in solids

1981 ◽  
Vol 299 (1452) ◽  
pp. 547-563 ◽  
Keyword(s):  
Molecular Structure ◽  
Solid State ◽  
High Resolution ◽  
Single Crystal ◽  
Two Dimensional ◽  
Dipolar Interactions ◽  
Recent Advances ◽  
Powder Samples ◽  
Successful Observation

Recent advances in solid state n.m.r. spectroscopy permit obervation of high-resolution dipolar spectra, and thus renewed consideration can be given to solid state n.m.r. as a tool for determining molecular structure. This is illustrated with 13 C and 14 N single-crystal spectra obtained with both one- and two-dimensional n.m.r. techniques. The successful observation of these spectra is due to the fact that many dipolar interactions are inhomogeneous, and for this reason it is also possible to obtain high-resolution dipolar spectra from powder samples. Methods that accomplish this goal are described and illustrated with 13 C - 1 H dipolar spectra.

A Preparation of High Resolution Standards for Electron Microscopy. Part II

1971 ◽  
Vol 29 ◽  
pp. 160-161
Author(s):  
Akira Tanaka ◽  
David F. Harling
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Carbon Black ◽  
Single Crystal ◽  
Dark Field ◽  
Graphitized Carbon Black ◽  
Graphitized Carbon ◽  
Dark Field Imaging ◽  
Crystal Films ◽  
Micro Holes

In the previous paper, the author reported on a technique for preparing vapor-deposited single crystal films as high resolution standards for electron microscopy. The present paper is intended to describe the preparation of several high resolution standards for dark field microscopy and also to mention some results obtained from these studies. Three preparations were used initially: 1.) Graphitized carbon black, 2.) Epitaxially grown particles of different metals prepared by vapor deposition, and 3.) Particles grown epitaxially on the edge of micro-holes formed in a gold single crystal film.The authors successfully obtained dark field micrographs demonstrating the 3.4Å lattice spacing of graphitized carbon black and the Au single crystal (111) lattice of 2.35Å. The latter spacing is especially suitable for dark field imaging because of its preparation, as in 3.), above. After the deposited film of Au (001) orientation is prepared at 400°C the substrate temperature is raised, resulting in the formation of many square micro-holes caused by partial evaporation of the Au film.

Detection of a point defect in a silicon single crystal by high-resolution TEM

1995 ◽  
Vol 53 ◽  
pp. 466-467
Author(s):  
M. Awaji
Keyword(s):  
High Resolution ◽  
Single Crystal ◽  
Point Defect ◽  
Point Defects ◽  
Noise Level ◽  
Dark Field ◽  
Silicon Single Crystal ◽  
High Resolution Image ◽  
Dark Field Imaging ◽  
Field Imaging

It is necessary to improve the resolution, brightness and signal-to-noise ratio(s/n) for the detection and identification of point defects in crystals. In order to observe point defects, multi-beam dark-field imaging is one of the useful methods. Though this method can improve resolution and brightness compared with dark-field imaging by diffuse scattering, the problem of s/n still exists. In order to improve the exposure time due to the low intensity of the dark-field image and the low resolution, we discuss in this paper the bright-field high-resolution image and the corresponding subtracted image with reference to a changing noise level, and examine the possibility for in-situ observation, identification and detection of the movement of a point defect produced in the early stage of damage process by high energy electron bombardment.The high-resolution image contrast of a silicon single crystal in the [10] orientation containing a triple divacancy cluster is calculated using the Cowley-Moodie dynamical theory and for a changing gaussian noise level. This divacancy model was deduced from experimental results obtained by electron spin resonance. The calculation condition was for the lMeV Berkeley ARM operated at 800KeV.

The use of high-resolution FESEM to study solid-state phase transformations and reactions

1994 ◽  
Vol 52 ◽  
pp. 1028-1029
Author(s):  
P. G. Kotula ◽  
D. D. Erickson ◽  
C. B. Carter
Keyword(s):  
Solid State ◽  
High Resolution ◽  
Phase Transformations ◽  
High Efficiency ◽  
Sol Gel ◽  
Quantitative Information ◽  
Solid State Reactions ◽  
Critical Dimensions ◽  
Backscattered Electrons ◽  
Backscattered Electron

High-resolution field-emission-gun scanning electron microscopy (FESEM) has recently emerged as an extremely powerful method for characterizing the micro- or nanostructure of materials. The development of high efficiency backscattered-electron detectors has increased the resolution attainable with backscattered-electrons to almost that attainable with secondary-electrons. This increased resolution allows backscattered-electron imaging to be utilized to study materials once possible only by TEM. In addition to providing quantitative information, such as critical dimensions, SEM is more statistically representative. That is, the amount of material that can be sampled with SEM for a given measurement is many orders of magnitude greater than that with TEM.In the present work, a Hitachi S-900 FESEM (operating at 5kV) equipped with a high-resolution backscattered electron detector, has been used to study the α-Fe2O3 enhanced or seeded solid-state phase transformations of sol-gel alumina and solid-state reactions in the NiO/α-Al2O3 system. In both cases, a thin-film cross-section approach has been developed to facilitate the investigation. Specifically, the FESEM allows transformed- or reaction-layer thicknesses along interfaces that are millimeters in length to be measured with a resolution of better than 10nm.

Combined high resolution powder and single-crystal diffraction to determine the structure of Li1+xCeIIIxCeIV6-xF25

2007 ◽  
Vol 2007 (suppl_26) ◽  
pp. 455-460 ◽  
Author(s):  
G. Renaudin ◽  
E. Mapemba ◽  
M. El-Ghozzi ◽  
M. Dubois ◽  
D. Avignant ◽  
...  
Keyword(s):  
High Resolution ◽  
Single Crystal ◽  
Single Crystal Diffraction

Two Consecutive Magneto-Structural Gas-Solid Transformations with Single-Crystal Retention in Non-Porous Molecular Materials

2018 ◽  
Author(s):  
Julia Miguel-Donet ◽  
Javier López-Cabrelles ◽  
Nestor Calvo Galve ◽  
Eugenio Coronado ◽  
Guillermo Minguez Espallargas
Keyword(s):  
Solid State ◽  
Single Crystal ◽  
Structural Rearrangement ◽  
Magnetic Behaviour ◽  
Porous Solids ◽  
Potential Applications ◽  
Hcl Gas ◽  
Porous Coordination Polymer ◽  
Gas Molecules ◽  
Magnetostructural Transformation

<p>Modification of the magnetic properties in a solid-state material upon external stimulus has attracted much attention in the recent years for their potential applications as switches and sensors. Within the field of coordination polymers, gas sorption studies typically focus on porous solids, with the gas molecules accommodating in the channels. Here we present a 1D non-porous coordination polymer capable of incorporating HCl gas molecules, which not only causes a reordering of its atoms in the solid state but also provokes dramatic changes in the magnetic behaviour. Subsequently, a further solid-gas transformation can occur with the extrusion of HCl gas molecules causing a second structural rearrangement which is also accompanied by modification in the magnetic path between the metal centres. Unequivocal evidence of the two-step magnetostructural transformation is provided by X-ray single-crystal diffraction.</p>

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