Photonic Crystal/Nano-Electronic Device Structures for Large Array Thermal Imaging

2007 ◽  
Author(s):  
Daniel C. Tsui
Keyword(s):  
Photonic Crystal ◽  
Thermal Imaging ◽  
Electronic Device ◽  
Large Array ◽  
Device Structures

scholarly journals Opportunities and Challenges in MOCVD of βGa2O3 for Power Electronic Devices

2019 ◽  
Vol 28 (01n02) ◽  
pp. 1940007 ◽  
Author(s):  
M. A. Mastro ◽  
J. K. Hite ◽  
C. R. Eddy ◽  
M. J. Tadjer ◽  
S. J. Pearton ◽  
...  
Keyword(s):  
Electronic Device ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Material System ◽  
Power Electronic ◽  
Large Area ◽  
Bulk Crystal Growth ◽  
Device Structures ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

Recent breakthroughs in bulk crystal growth of β-Ga2O3 by the edge-defined film-fed technique has led to the commercialization of large-area β-Ga2O3 substrates. Standard epitaxy approaches are being utilized to develop various thin-film β-Ga2O3 based devices including lateral transistors. This article will discuss the challenges for metal organic chemical vapor deposition (MOCVD) of β-Ga2O3 and the design criteria for use of this material system in power electronic device structures.

Gas-Source Molecular Beam Epitaxy of Electronic Devices

1996 ◽  
Vol 421 ◽  
Author(s):  
E.A. Beam ◽  
B. Brar ◽  
T.P.E. Broekaert ◽  
H.F. Chau ◽  
W. Liu ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Heterojunction Bipolar Transistors ◽  
High Speed ◽  
Molecular Beam ◽  
Electronic Device ◽  
Field Effect Transistors ◽  
Tunneling Diodes ◽  
Gas Source ◽  
Device Structures ◽  
Double Heterojunction

AbstractGas-source molecular beam epitaxy (GSMBE) has been developed into a useful tool for the growth of both optical and electronic device structures. In this paper, we report on the use of tertiarybutylarsine (TBA) and tertiarybutylphosphine (TBP) in GSMBE for the growth of electronic device structures with state-of-the-art performance. Device structures based on both the In0.48Ga0.52P/GaAs and In0.53Ga 0.47As/InP lattice matched materials systems are described. The GSMBE system is based on the use of elemental Group-rn sources and employs thermal crackers for precracking TBA and TBP. Dopant sources include both elemental (Sn and Be) and vapor (CBr4 and SiBr4) sources. Device structures fabricated in the In0.48Ga0.52P/GaAs materials system include single- and double- heterojunction bipolar transistors (SHBTs and DHBTs). Device structures fabricated in the In0.53Ga0.47As/InP materials system include SHBTs, DHBTs, heterojunction field effect transistors (HFETs), and both planar and lateral resonant tunneling diodes (RTDs.) Vertically integrated HFET and multi-RTD heterostructures for high speed logic/memory are also described.

X-ray topographic imaging of (Al, Ga)N/GaN based electronic device structures on SiC

2006 ◽  
Vol 253 (1) ◽  
pp. 209-213 ◽  
Author(s):  
L. Kirste ◽  
S. Müller ◽  
R. Kiefer ◽  
R. Quay ◽  
K. Köhler ◽  
...  
Keyword(s):  
Electronic Device ◽  
X Ray ◽  
Device Structures ◽  
Topographic Imaging

Structure determination of MBE-grown GaAs(001)-2×4 surfaces by quantitative RHEED analyses

1993 ◽  
Vol 51 ◽  
pp. 1008-1009
Author(s):  
Y. Ma ◽  
S. Lordi ◽  
J. A. Eades
Keyword(s):  
Gallium Arsenide ◽  
Surface Structure ◽  
Structure Determination ◽  
Electronic Device ◽  
Mbe Growth ◽  
X Ray ◽  
Device Structures ◽  
Structure Determinations ◽  
Quantitative Analyses

The GaAs(001) surface is the most widely used gallium arsenide face in the MBE growth of multilayer electronic device structures. Various reconstructions on this face have been reported. They range from the As-rich (2×4) to the Ga-rich (4×2). The As-rich (2×4) surface is the most important one of these, since MBE growth usually starts and ends with this surface. A multislice formalism of Cowley & Moodie with a recently developed edge patching method has been applied to quantitative analyses of the RHEED patterns from MBE grown GaAs(001)-2×4 surfaces. The analyses are based on the ordering of visually estimated spot intensities of the observed RHEED patterns from the GaAs(001)-2×4 surfaces, which is similar to the approach used in early X-ray structure determinations. The surface structure has been proved to be a dimerized vacant 2×4 reconstruction with one dimer of every four missing, which is consistent with previous STM observations.

scholarly journals Techniques for Materials Microanalysis

MRS Bulletin ◽  
1987 ◽  
Vol 12 (6) ◽  
pp. 22-25
Author(s):  
C.R. Helms
Keyword(s):  
Physical Properties ◽  
Electronic Device ◽  
Three Dimensional ◽  
Atomic Scale ◽  
New Techniques ◽  
Measurement Capability ◽  
Chemical Analysis Techniques ◽  
Device Structures ◽  
Interface Structures ◽  
Analytical Tools

The science and technology of ultrasmall three-dimensional materials systems has been developing rapidly the last 20 years or so. Catalysts, coatings, composites, as well as electronic device structures—all rely on materials properties on an atomic scale. To develop such new materials and understand the chemical and physical properties that determine their unique behavior, we also require analytical tools with atomic level spatial resolution and at the same time the desired measurement capability. This need, along with extensive scientific interest in the fundamental chemical and physical properties of free surfaces, has led to the continued development of microanalytical chemical analysis techniques over the past 20 years. Most readers will be familiar with many of these techniques with acronyms such as AES, XPS, RBS, SIMS, ESCA, etc. This issue of the MRS BULLETIN will review some recent advances in the development of these techniques as well as introduce new techniques with significant advantages over the older ones.As you can see from the thickness of this issue, it is difficult to cover the entire field in a finite amount of space. This led us to limit the discussion to those microanalytical tools which can easily be applied to the analysis of buried interface structures such as those found in semiconductor devices.

Growth of AlGaN/GaN based electronic device structures with semi-insulating GaN buffer and AlN interlayer

2005 ◽  
Vol 2 (7) ◽  
pp. 2639-2642 ◽  
Author(s):  
S. Müller ◽  
K. Köhler ◽  
R. Kiefer ◽  
R. Quay ◽  
M. Baeumler ◽  
...  
Keyword(s):  
Electronic Device ◽  
Device Structures

Photonic-Crystal-Fiber Quantum Probes for High-Resolution Thermal Imaging

2020 ◽  
Vol 13 (4) ◽  
Author(s):  
Sean M. Blakley ◽  
Christapher Vincent ◽  
Ilya V. Fedotov ◽  
Xinghua Liu ◽  
Kyle Sower ◽  
...  
Keyword(s):  
Photonic Crystal ◽  
High Resolution ◽  
Photonic Crystal Fiber ◽  
Thermal Imaging ◽  
Crystal Fiber

Review of Atom Probe FIB-Based Specimen Preparation Methods

2007 ◽  
Vol 13 (6) ◽  
pp. 428-436 ◽  
Author(s):  
Michael K. Miller ◽  
Kaye F. Russell ◽  
Keith Thompson ◽  
Roger Alvis ◽  
David J. Larson
Keyword(s):  
Electronic Device ◽  
Atom Probe ◽  
Specimen Preparation ◽  
Preparation Methods ◽  
Site Specific ◽  
Device Structures

Several FIB-based methods that have been developed to fabricate needle-shaped atom probe specimens from a variety of specimen geometries, and site-specific regions are reviewed. These methods have enabled electronic device structures to be characterized. The atom probe may be used to quantify the level and range of gallium implantation and has demonstrated that the use of low accelerating voltages during the final stages of milling can dramatically reduce the extent of gallium implantation.

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