Characterization of Quantum Well Laser Diodes for Application within the AMRDEC HWIL Facilities

2004 ◽  
Author(s):  
Daniel A. Saylor ◽  
Matt Bender ◽  
Thomas M. Cantey ◽  
David B. Beasley ◽  
Jim Buford
Keyword(s):  
Quantum Well ◽  
Laser Diodes ◽  
Quantum Well Laser

Characterization of GaS-Passivated Quantum-Well Laser Diodes

1999 ◽  
Vol 573 ◽  
Author(s):  
L. G. Vaughn ◽  
T. C. Newell ◽  
L. F. Lester ◽  
A. N. Macinnes
Keyword(s):  
Quantum Well ◽  
Radiative Recombination ◽  
Laser Diodes ◽  
Surface States ◽  
Ridge Waveguide ◽  
Pulsed Power ◽  
Quantum Well Laser ◽  
Heating Effects ◽  
The Impact

ABSTRACTThe degradation of AlGaAs/GaAs diode laser performance during operation is typically due to catastrophic optical damage of the facets caused when thermal runaway occurs. These heating effects are due to the presence of non-radiative recombination sites at and near the facets. MOCVD GaS is deposited on the facets of 825-nm ridge waveguide AlGaAs/GaAs quantumwell laser diodes as an electronic passivation to reduce the number of surface states available for non-radiative recombination. For passivated devices, a peak pulsed power nearly double that of unpassivated devices was achieved. The passivated devices also exhibit a longer lifetime before degradation. The impact of the passivation process on other optical characteristics of the laser diodes will also be discussed.

Optimization and characterization of index-guided visible AlGaAs/GaAs graded barrier quantum well laser diodes

1987 ◽  
Vol 23 (6) ◽  
pp. 696-703 ◽  
Author(s):  
L. Mawst ◽  
M. Givens ◽  
C. Zmudzinski ◽  
M. Emanuel ◽  
J. Coleman
Keyword(s):  
Quantum Well ◽  
Laser Diodes ◽  
Quantum Well Laser

scholarly journals Electron Beam Induced Current Characterization of Dark Line Defects in Failed and Degraded High Power Quantum Well Laser Diodes

2010 ◽  
Vol 16 (S2) ◽  
pp. 794-795
Author(s):  
M Mason ◽  
N Presser ◽  
Y Sin ◽  
B Foran ◽  
SC Moss
Keyword(s):  
Electron Beam ◽  
Quantum Well ◽  
High Power ◽  
Laser Diodes ◽  
Induced Current ◽  
Dark Line ◽  
Quantum Well Laser ◽  
Line Defects ◽  
Electron Beam Induced Current

Extended abstract of a paper presented at Microscopy and Microanalysis 2010 in Portland, Oregon, USA, August 1 – August 5, 2010.

Characterization of InGaN/AlGaN multiple-quantum-well laser diodes

1999 ◽  
Author(s):  
Michael Kneissl ◽  
David P. Bour ◽  
Linda T. Romano ◽  
Daniel Hofstetter ◽  
Matt D. McCluskey ◽  
...  
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Laser Diodes ◽  
Multiple Quantum ◽  
Quantum Well Laser ◽  
Multiple Quantum Well Laser
Sign in / Sign up

Export Citation Format

Share Document